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    2N6061 Search Results

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    2N6061 Price and Stock

    Microchip Technology Inc 2N6061

    POWER BJT
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    Microchip Technology Inc 2N6061 36 Weeks
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    Onlinecomponents.com 2N6061
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    NAC 2N6061 1
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    2N6061 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6061 API Electronics Short form transistor data Short Form PDF
    2N6061 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6061 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6061 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6061 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N6061 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6061 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6061 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6061 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N6061 PPC Products Transistor Short Form Data Scan PDF
    2N6061 Silicon Transistor Industrial Grade Power Transistors Scan PDF
    2N6061 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N6061 Solidev Semiconductors Misc. Data Book Scans 1975/76 Scan PDF
    2N6061 Solitron Devices Planar Power Transistor Scan PDF

    2N6061 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6061

    Abstract: DSASW0036862
    Text: Device Type VCEO hFE V Min/Max 2N6061 100 25/120 @ IC (A) 20.0 VCE (sat) @ IC (A) Max (V) 0.80 20.0 (MHz) PT MAX (W) 10.0 150.0 fT MIN * Case Type Chip Type TO-63 268


    Original
    PDF 2N6061 2N6061 DSASW0036862

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


    Original
    PDF SDT55960 SML55462 PTC6683 2SD642 SML55464 D60T4040 D62T4040 SDT5825 SDT5855 SDT5826 LT082 LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800

    TIP360

    Abstract: b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 A, BLX84 2SB1079 B07460 B07460 RCA91160 B0750A B0750A B0751A B0751A B0750C ~g;~~g 15 20 B0751C MJ15004 RCA9116C 2SC2820 SSP72 TIP36 B0250 SSP72A ~~~~~A 25 30 2N5883 SSP72B B0250B TIP36B 2N5884 2N6436


    Original
    PDF 2N5683 2N5684 2N6377 2N6380 2N6061 2N6063 2N6378 2N6381 2N6379 2N6382 TIP360 b0751 pn5931 PN5932 b0746 sm2160 2SC2936 HITACHI ST29045 PN5929 st2904

    SPHV402

    Abstract: TO36 TO114
    Text: 8440355 SPACE SPACE POWER POWER E L E C T R O N I C S 89C ELECTRONICS "flT 00115 D T-3 3-0/ DE~|fl44Q3SS •••••US t Ni-Rel PLANAR POWER 60 AMP P B A S E T O E M I T T E R S A T U R A T I O N V O L T A G E 3.5 S w 2 . 0 UI CD > 1 . 5 ." 1 TA-" - 5 5


    Original
    PDF fl44Q3SS 166WOT O-114 SPHV405 SPHV406 SPHV407 SPHV408 SPHV409 SPHV420 SPHV421 SPHV402 TO36 TO114

    2N6061

    Abstract: C30A NPN TRANSISTORS LIST 2N6060 LA10A Solidev Semiconductors Solidev
    Text: Semiconductors Solidev Silicon Power Transistors P H Y S I C A L D IM E N S IO N S Silicon NPN/PNP Power Transistors—60 Amp REFERENCE T A B L E Code Polarity Stock No. 2N6060 2N6061 NPN PNP 35077B 35078X A B S O L U T E M A X IM U M R A T IN G S 2N6060 2N6061


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    PDF 2N6060 35077B 2N6061 35078X 2N6061 TC-15CPC C30A NPN TRANSISTORS LIST LA10A Solidev Semiconductors Solidev

    2N5969

    Abstract: 2n6182 2N6031 i8080 2N6030 2N5876 2N5879 2N5880 2N5883 2N5954
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST m hF:E SAT . VOLTA GES M 'c (A 4 M in . M ax. 6 VCE (V) 4 20 60 6 4 6 80 80 6 4 TO-3 60 60 5 2N 5884 TO-3 80 80 2N 5954 TO -66 90 2N 5955 TO -66 2N 5956 X m PNP DEVICE BR EAKDOY V OLTAGE S (V) 0.5 1 2 20


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    PDF 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955 2N5956 2N5958 2N5960 2N5969 2n6182 2N6031 i8080 2N6030

    2NS604

    Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
    Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75


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    PDF 2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302

    Untitled

    Abstract: No abstract text available
    Text: 8254022 SILICON TRANSISTOR CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5745 2N5758 2N5759 2N5760 2N5784 2N5785 2N5786 2N5804 2N5805 2N5838 2N5839 2N5840


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    PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744

    SILICON TRANSISTOR CORP

    Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
    Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V


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    PDF 8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060

    AP1069

    Abstract: AP1112 2N5489 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 ZbC INC D O D O S B 11] S |~ D ~ fZ 3 3 ~ £ 00239 C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


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    PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 AP1069 AP1112 2N5489

    Untitled

    Abstract: No abstract text available
    Text: 8368602 SOLITRON DEVICES INC TS 95D 02891 d ÊT| 03bflbDS D T~~ S S ~ 7 -ÆMron Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum


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    PDF 03bflbDS 305mm) 2N6061, 2N6377, SDT3601 SDT3604, SDT3901 SDT3904, 2N5678, 2N6382

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


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    PDF PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437

    4233A

    Abstract: 535x 184 324 DIODE 2N5383 2N3055C
    Text: Contran ÄTTM,© STAND ARD PART LIST [continued] Devices. Inc STANDARD DIODE CHIP SELECTIONS PART No. Vr MIN. VO LTS Vp@ M AX. VO LTS If A M PS. trr N SE C . PA G E No. 5 31X C 003 531X C 004 532X C 001 532X C 002 532X C 003 100 400 50 80 100 1.3 1.8


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    PDF 533XCD01 534XCD02 535XCQ01 2N1063 2N107Û 4233A 535x 184 324 DIODE 2N5383 2N3055C

    Untitled

    Abstract: No abstract text available
    Text: -Jfoutran P l M i M ? © Â ? M ,© ( MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER Devices. Inc. PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * (FORMERLY 68 CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" a lso available)


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    PDF 305mm) SDT3901 SDT3904, 2N5678, 2N6382 C-100 C-101

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


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    PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2N6187

    Abstract: TO-59 2N6030 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955
    Text: PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BR E A K D O \ WN V O LT A G E S n m CASE V CB V CE V EB 'c SAT . V O L T A GES M ax. 'c M in . M ax. (A) 'b (A) VCE (V) V BE (V) (A) 2N 5876 TO-3 80 80 6 4 4 20 100 4 0.5 1 2 2N 5879 TO-3 60 60 6 4 6 20


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    PDF 2N5876 2N5879 2N5880 2N5883 2N5884 2N5954 2N5955 2N5956 2N5958 2N5960 2N6187 TO-59 2N6030

    2N5940

    Abstract: 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030 2N5733 2N5734 2N5738
    Text: 8254022 S IL IC O N TRANS IS T O R CORP NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued "flö Ô8D 0 0 7 9 6 . DE | f l a S 4 D E S DDDOTTt. 3 ,D . . T - |~~ lc Max Amps VCEO(SUS) Polarity 2N5733 2N5734 2N5737 2N5738 2N5739 NPN NPN PNP PNP


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    PDF 2N5733 2N5734 2N5737 2N5738 2N5739 2N5740 2N5741 2N5742 2N5743 2N5744 2N5940 2N5928 2N597 2N5867 2NXXXX 2n5870 2N6030

    2N6960

    Abstract: TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756
    Text: n? SOLITRON DEVICES 95D 0277 3 INC S0LITR0N DEVICES INC TS D T - 3 3 - O Z D f F | fl3bflbDS 0002773 1 |~ [ ^ m © ^ © M ^ y o © P L A N A R P O W E R T R A N S IS T O R S Devices, Inc. @ 1] MOW? Ic A) *T MIN (MHz) PT MAX (W) CASE TYPE CHIP TYPE 1.50


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    PDF 2N6546 2N6547 SDT14411 SDT14412 SDT14413 SDT14414 SDT14415 2N6246 2N6247 O-114 2N6960 TO114 SDT96302 SDT96303 2N4002 2N5678 2N421 2N6742 2N6884 SDT8756

    Untitled

    Abstract: No abstract text available
    Text: ^Ælltran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 68 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


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    PDF 305mm) 20MHz 20MHz 900pF

    Untitled

    Abstract: No abstract text available
    Text: 'SOLITRON DEVICES INC äh de^ I fl3L.ab02 O D o a s ö T a | _ 7 " ' 3 3 - / 7 ELEMENT NUMBER 268 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING PNP EPITAXIAL PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 50.000A Aluminum FORMERLY 68 Collector: Polished Silicon


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    PDF 36nim 20MHz 20MHz 900pF

    2N5685

    Abstract: 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278
    Text: A P I ELECTRONICS 0043592 A P I INC _ 2b ELECTRONICS DE 1 0 0 4 3 5 ^ 5 INC D O D O S B 11] S ZbC 0 0 2 3 9 |~ D ~fZ33~£ C O L L E C T O R C U R R E N T = 5 0 A M PS N PN T Y PE S D ev ice No C a se VCBO V olts VCEO (sus) V olts 2N5685 2N5686 2N5926 2N6032


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    PDF 004BSTS 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278

    2N4866

    Abstract: No abstract text available
    Text: 45 SILICON POWER TRANSISTORS O V CBO V < CASE TYPE TYPE NUMBER < in CUR R E N V EBO V M IN . hFE I M AX. r G A IN V CE V SATURATIOIV VO LTA G ES @ I 'c A V CE s V BE(s) V I V *C A I *B A 50 AMP SILICON NPN SDT9631 SDT9632 SDT9633 TO-63 TO-63 TO-63 250 275


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    PDF

    AP1069

    Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
    Text: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278


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    PDF 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N5968 AP1069 AP1112 to63