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Microchip Technology Inc 2N5880 PNP POWER TRANSISTOR SILICON AMP
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Avnet Americas	2N5880	Bulk		36 Weeks	100	1 $43.0612 10 $43.0612 100 $37.97625 1000 $39.69137 10000 $39.69137	Buy Now
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Newark	2N5880	Bulk			100	1 - 10 - 100 $40.8 1000 $39.24 10000 $39.24	Buy Now
Microchip Technology Inc	2N5880			36 Weeks		1 $43.94 10 $43.94 100 $43.94 1000 $43.94 10000 $43.94	Buy Now

Onlinecomponents.com	2N5880					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
NAC	2N5880	Tray			7	1 $44.83 10 $44.83 100 $41.29 1000 $38.27 10000 $38.27	Buy Now
Master Electronics	2N5880					1 - 10 - 100 $38.95 1000 $38.95 10000 $38.95	Buy Now
GTCAP 2N5880 TRANSISTOR,BJT,PNP,80V V(BR)CEO,15A I(C),TO-3
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Quest Components	2N5880		9			1 $7.56 10 $5.544 100 $5.544 1000 $5.544 10000 $5.544	Buy Now
Sabritec 2N5880 TRANSISTOR,BJT,PNP,80V V(BR)CEO,15A I(C),TO-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2N5880		1			1 $7.56 10 $5.04 100 $5.04 1000 $5.04 10000 $5.04	Buy Now

2N5880 Datasheets (31)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5880	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160	Original	PDF
2N5880	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N5880	API Electronics	Short form transistor data	Short Form	PDF
2N5880	Boca Semiconductor	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160	Scan	PDF
2N5880	Central Semiconductor	Complementary Silicon Power Transistors, TO-3	Scan	PDF
2N5880	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5880	Diode Transistor	Transistor Short Form Data	Scan	PDF
2N5880	Diode Transistor	Silicon Transistors / TO-63 Transistors	Scan	PDF
2N5880	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N5880	General Transistor	Power Transistor Selection Guide	Scan	PDF
2N5880	Mospec	POWER TRANSISTORS(15A,160W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=15 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=160	Scan	PDF
2N5880	Mospec	Complementary Silicon High-Power Transistor	Scan	PDF
2N5880	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N5880	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

2N5880	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2N5880	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5880	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5880	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2N5880	Unknown	Transistor Replacements	Scan	PDF
2N5880	Unknown	Cross Reference Datasheet	Scan	PDF

2N5880 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5881 Abstract: 2N5882 2N5879 2N5880 Text: Inchange Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880
Untitled Abstract: No abstract text available Text: 2N5880 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5880 O204AA) 16-Jul-02
Untitled Abstract: No abstract text available Text: 2N5880 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)15 Absolute Max. Power Diss. (W)160# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)80 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15	Original	PDF	2N5880 time700n
2N5880 Abstract: No abstract text available Text: 2N5880 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5880 O204AA) 31-Jul-02 2N5880
2N5882 Abstract: 2N5881 2N5879 2N5880 Text: SavantIC Semiconductor Product Specification 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5879 2N5880 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	PDF	2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880
2N5879 Abstract: 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825 Text: MOTOROLA Order this document by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage —	Original	PDF	2N5879/D 2N5879 2N5880* 2N5881 2N5882* 2N5879, 2N5880, 2N5882 2N5879/D* 2N5879 2N5880 2n5879 pin out 2N5880 motorola NPN bipolar junction transistors max hfe 2000 2N5882 2n5882 motorola 2n5879 power amplifier circuit 2N5879 MOTOROLA 1N5825
NPN power transistor 15A amperes Abstract: 2N5880 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS Text: 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A	Original	PDF	2N5880 2N5882 2N5880 NPN power transistor 15A amperes 2N5882 AMP UK 45 COMPLEMENTARY SILICON POWER TRANSISTORS
2N5879 Abstract: 2N5880 2N5881 2N5882 Text: SavantIC Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2N5881 2N5882 APPLICATIONS ·For general-purpose power amplifier and switching applications	Original	PDF	2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882
2N5879 Abstract: 2N5880 2N5882 2N5881 Text: Inchange Semiconductor Product Specification 2N5879 2N5880 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Low collector saturation voltage ・Complement to type 2N5881 2N5882 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5879 2N5880 2N5881 2N5882 2N5879 2N5880 2N5882
2N5881 Abstract: 2N5882 2N5879 2N5880 Text: Product Specification www.jmnic.com 2N5881 2N5882 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Low collector-emitter saturation voltage ・Complement to type 2N5879 2N5880 APPLICATIONS ・For general-purpose power amplifier and switching applications	Original	PDF	2N5881 2N5882 2N5879 2N5880 2N5881 2N5882 2N5880
MJE34 equivalent Abstract: BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 2N5880* Complementary Silicon High-Power Transistors NPN 2N5881 2N5882* . . . designed for general–purpose power amplifier and switching applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 60 Vdc (Min) — 2N5879, 2N5881	Original	PDF	2N5879, 2N5881 2N5880, 2N5882 2N5879 2N5880* 2N5882* TIP73B TIP74 MJE34 equivalent BU108 2SA1046 2n5882 BDX54 2N5880 BC 107 npn transistor pin configuration 2SB56 BU326 BU100
2N5880 Abstract: No abstract text available Text: 2N5880 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N5880 O204AA) 18-Jun-02 2N5880
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE PNP TO-3 DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247	OCR Scan	PDF	2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A

23741 Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437 Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 JAN2N6437 JANTX2N6437 JANTXV2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967	OCR Scan	PDF	PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437
2N5879 Abstract: 2N5880 2N5882 2N5881 complimentary 400 w Text: Datasheet Central 2N5879 2N5881 Sem iconductor Corp. 2N5880 2N5882 PNP NPN COMPLIMENTARY SILICON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	2N5879 2N5880 2N5881 2N5882 2N5879, 200mA 100kHz 2N5879 complimentary 400 w
2N5880 Abstract: 2N5882 2N5879 2N5881 S200 TRANSISTOR TC 100 Text: 2N5879, 2N5880 PNP I 2N5881, 2N5882 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5879, 2N5881 2N5880, 2N5882	OCR Scan	PDF	2N5879, 2N5880 2N5881, 2N5882 2N5881 2N5880, 2N5882 2N5881 2N5879 S200 TRANSISTOR TC 100
l5 transistor PNP Abstract: 2N3792A 2N6330 PNP TRANSISTOR 2N3789 2N3790 2N4398 2N4901 2N4902 2N4903 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR PNP TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS PNP TO-3 2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A 2N5684A 2N5745A 2N5875 2N5876 2N5879 2N5880 2N5883 2N5884 2N6246 2N6247	OCR Scan	PDF	2N3789 2N3790 2N3791A 2N3792A 2N4398 2N4399A 2N4901 2N4902 2N4903 2N5683A l5 transistor PNP 2N6330 PNP TRANSISTOR
2N5879 Abstract: No abstract text available Text: TYPES 2N5879, 2N5880 P-N-P SINGLE-DIFFUSED SILICON POWER TRANSISTORS a -I c-< f- "0 i—m m </> H ro zg C O •u FO R P O W ER -A M P L IFIE R A N D H IG H -SPEED -SW ITCH IN G A P P LIC A T IO N S D E S IG N E D FO R C O M P L E M E N T A R Y U S E W ITH 2N 5881, 2N5882	OCR Scan	PDF	2N5879, 2N5880 2N5882 2N5879
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2N5866 Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75	OCR Scan	PDF	5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
NES 2N5672 Abstract: 2N4904 5330-30 D0D00S4 2N5867 2N3713 2N3714 2N3715 2N3716 2N3789 Text: NE 111 E N G L A N D SEMICONDUCTOR STE » • LSbHTTa D0D0054 434 « N E S '7 > 3 5 - o / = 3 -5 0 A VcEO SUS = 4 0 -1 0 0 V fx = 2-6 M Hz lc(MAX) PIMP TO-3 Case 8 0 3 Case 8 0 4 Type No. NPN Complé ment VCEO <V) 1C (MAX) (A) (SUS> VCE (SAT) tlFE IC/VCE	OCR Scan	PDF	0-100V D0D00S4 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 2N3716 NES 2N5672 2N4904 5330-30 2N5867
Untitled Abstract: No abstract text available Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F \| d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3	OCR Scan	PDF	2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10	OCR Scan	PDF	5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

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2N5880 Price and Stock

Microchip Technology Inc 2N5880

GTCAP 2N5880

Sabritec 2N5880

2N5880 Datasheets (31)

2N5880 Datasheets Context Search

2N5881

Untitled

Untitled

2N5880

2N5882

2N5879

NPN power transistor 15A amperes

2N5879

2N5879

2N5881

MJE34 equivalent

2N5880

sn76131

Untitled

23741

2N5879

2N5880

l5 transistor PNP

2N5879

IC HXJ 2038

2N5866

NES 2N5672

Untitled

Untitled