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Microchip Technology Inc 2N5675 POWER BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5675	Bulk			100	1 - 10 - 100 $29.73 1000 $29.73 10000 $29.73	Buy Now
Avnet Americas	2N5675	Bulk		22 Weeks	100	1 $31.3894 10 $31.3894 100 $27.69 1000 $28.94005 10000 $28.94005	Buy Now
Mouser Electronics	2N5675					1 - 10 - 100 $32.03 1000 $32.03 10000 $32.03	Get Quote
Newark	2N5675	Bulk			100	1 - 10 - 100 $29.73 1000 $28.6 10000 $28.6	Buy Now
Future Electronics	2N5675				100	1 - 10 - 100 $31.78 1000 $31.78 10000 $31.78	Buy Now

Microchip Technology Inc	2N5675			22 Weeks		1 $32.03 10 $32.03 100 $32.03 1000 $32.03 10000 $32.03	Buy Now
Onlinecomponents.com	2N5675					1 - 10 - 100 $28.4 1000 $28.4 10000 $28.4	Buy Now
NAC	2N5675				10	1 $32.69 10 $32.69 100 $30.11 1000 $27.9 10000 $27.9	Buy Now
Master Electronics	2N5675					1 - 10 - 100 $28.4 1000 $28.4 10000 $28.4	Buy Now

2N5675 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
2N5675		Semelab	Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=50-150 / fT(Hz)=50M / Pwr(W)=1		Original	PDF
2N5675		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
2N5675		Unknown	Shortform Transistor Datasheet Guide		Short Form	PDF
2N5675		Unknown	Transistor Shortform Datasheet & Cross References		Scan	PDF
2N5675		Unknown	Shortform Transistor PDF Datasheet		Short Form	PDF

2N5675 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5675 Abstract: No abstract text available Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)	Original	PDF	2N5675 O205AD) 1-Aug-02 2N5675
Untitled Abstract: No abstract text available Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)	Original	PDF	2N5675 O205AD) 19-Jun-02
Untitled Abstract: No abstract text available Text: 2N5675 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)	Original	PDF	2N5675 O205AD) 17-Jul-02
BD607 Abstract: BDY17 sd1536-1 mj2940 motorola RCA1C07 bd608 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on fT tON r hFE ICBO (CE)set Toper Max Max Max ON) Min (Hz) (A) (s) Max (Ohms) Max (°C) 275m 275m 275m 140 140 140 140 140 140 PD Package Style D vices 20 Watts or More, (Cont'd)	Original	PDF	BD607 BD608 BDS10 BDS13 2SD369 2SD3690 2N5621 2N5622 2SD369Y BDY17 sd1536-1 mj2940 motorola RCA1C07
Untitled Abstract: No abstract text available Text: May 1998 SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667 2N5671 2N5671 CECC 2N5671 CECC 2N5672 2N5672 CECC 2N5672 CECC 2N5675 2N5676 2N5679 2N5680 2N5681 2N5681-SM	OCR Scan	PDF	2N5661 2N5662 2N5663 2N5664 2N5664-SM 2N5665 2N5665-SM 2N5666 2N5666-SM 2N5667
transistor YA Abstract: Solitron Devices pnp, 200 V, 20A 2N5675 code Transistor ya Text: SOLITRON DEVICES INC 4fiE D • a3bflbOE DQD37b7 ^olitron Devices, Inc. S P E C I F I C A T I O N S N0” "Hb ■ S O D T 33 17 2N5675 TYPE: PNP SILICON TRANSISTOR MAXIMUM RATINGS CASE: T 0 " 5 Voltage, Collector to Base VCB0 .	OCR Scan	PDF	DQD37b7 2N5675 -10mA -125V -500mA 200mA -50mA 10MHz transistor YA Solitron Devices pnp, 200 V, 20A 2N5675 code Transistor ya
2N5866 Abstract: 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447 Text: NElil ENGLAND SEMICONDUCTOR bSbM ^a S'ìE D dogooss lc M AX — 2-50 A V ceo(sus) = 3 5-5 00 V fT = 0.2-50 MHz NPN TO-3 Case 803 Case 804 PN P Complé ment -r-33 -6( Icev @ V ce (mA @ V) Po @ TC = 25 °C (Watts) 025b@30 025b@30 025 @30 025b@30 75 75 75	OCR Scan	PDF	5-500V 2n1487 2n1488 2n1489 2n1490 5n5883 2n5886 2n5884 2n5929 2n5930" 2N5866 2n4348 semiconductor 212S 2N5675 2N5867 2N5872 NES 2N5672 2n5038 2n3447
2N5385 Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388 Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO	OCR Scan	PDF	flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388
MC2259 Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214 Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the	OCR Scan	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
2n5480 Abstract: No abstract text available Text: K □ □ □ ° Q ru ru lr X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o CD r- CO CD CD CD IO lO Ó Ó Ó Ó Ó 1— 1 — 1— f— I— to to CO CO to Ó Ó Ó Ó Ó f— 1— 1— 1— 1— TO-3 TO-39/TO-5 TO-111 TO-61 TO-3 » TO-3 T0-3 TO-59 T0-111	OCR Scan	PDF	O-39/TO-5 O-111 T0-111 O-111 24UNF 2n5480
Germanium drift transistor Abstract: 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor Text: POWER DATA BOOK FAIRCHILD 464 Ellis Street, Mountain View, California 94042 1976 Fairchild Camera and Instrum ent C orporation/464 Ellis Street, M ountain View, California 940 4 2 / 4 15 9 6 2 -5 0 1 1/TW X 910 -3 7 9-6 4 3 5 INTRODUCTION You, the customer, and your needs have dictated the form at and contents of	OCR Scan	PDF	orporation/464 CH-8105 Germanium drift transistor 2N4895 germanium transistor epitaxial mesa transistor sec tip31A halbleiter index transistor transistor BD222 BD699 EQUIVALENT kd 2060 transistor
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	PDF	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
Untitled Abstract: No abstract text available Text: General Transistor Corporation CASE TO-3, TO-39 le MAX = 3-50A V c e o (SUS) = 40-100V PNP Power Transistors NPN Typ. No. conplMMnt W hFE&c/Vc* (mln-màx A/V) VCE(SAT) ©IC/IB (V© A/A) 10 10 10 10 25-90 @1/2 25-90 @1/2 50-150 @ 1/2 50-150 @1/2 1 @4/4	OCR Scan	PDF	0-100V 2N6330 2N6331 2N6327 2N6328 2N6436 2N6437 2N6438 2N6377 2N6378

LC51 Abstract: No abstract text available Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629	OCR Scan	PDF	A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51