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Microchip Technology Inc 2N5609 POWER BJT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2N5609	Bulk			100	1 - 10 - 100 $37.2901 1000 $37.2901 10000 $37.2901	Buy Now
Avnet Americas	2N5609	Bulk		36 Weeks	100	1 $39.3568 10 $39.3568 100 $34.71975 1000 $36.2889 10000 $36.2889	Buy Now
Mouser Electronics	2N5609					1 - 10 - 100 $40.16 1000 $40.16 10000 $40.16	Get Quote
Newark	2N5609	Bulk			100	1 - 10 - 100 $37.29 1000 $35.87 10000 $35.87	Buy Now
Future Electronics	2N5609				100	1 - 10 - 100 $39.85 1000 $39.85 10000 $39.85	Buy Now

Microchip Technology Inc	2N5609			36 Weeks		1 $40.16 10 $40.16 100 $40.16 1000 $40.16 10000 $40.16	Buy Now
Onlinecomponents.com	2N5609					1 - 10 - 100 $35.61 1000 $35.61 10000 $35.61	Buy Now
NAC	2N5609				8	1 $40.99 10 $40.99 100 $37.75 1000 $34.99 10000 $34.99	Buy Now
Master Electronics	2N5609					1 - 10 - 100 $35.61 1000 $35.61 10000 $35.61	Buy Now

2N5609 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
2N5609	Inchange	Silicon PNP Transistors	Original	PDF
2N5609	Semelab	Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=80 / Ic=5 / Hfe=70-200 / fT(Hz)=70M / Pwr(W)=25	Original	PDF
2N5609	API Electronics	5 Amps PNP Transistors	Scan	PDF
2N5609	API Electronics	5 AMPS PNP Transistors	Scan	PDF
2N5609	API Electronics	Short form transistor data	Short Form	PDF
2N5609	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
2N5609	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2N5609	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2N5609	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N5609	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N5609	PPC Products	Transistor Short Form Data	Scan	PDF
2N5609	PPC Products	Transistor Selection Guide	Scan	PDF
2N5609	PPC Products	Transistor Selection Guide including JAN / JANTX / JANTXV	Scan	PDF
2N5609	Semico	PNP Silicon Power Transistors / Low Level Amplifiers	Scan	PDF

2N5609	Solidev Semiconductors	Solid State Products (Transistor Guide)	Scan	PDF
2N5609	Solitron Devices	Planar Power Transistor	Scan	PDF

2N5609 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
5609 Abstract: DATASHEET 5609 2*5609 2N5607 2N5609 2N5605 5609 c 2N5611 Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications	Original	PDF	2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 5609 c 2N5611
2SB5950 Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198 Text: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect	Original	PDF	2N5410 9FT36 9UX78 BUX78 2SA1069AL 2N6191 2SB869 2SB933 2SB945 2SB5950 B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
2n5609 transistor Abstract: 2N5609 Text: 2N5609 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	PDF	2N5609 O213AA) 1-Aug-02 2n5609 transistor 2N5609
5609 Abstract: DATASHEET 5609 2N5605 2*5609 2N5607 2N5609 2N5611 Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	PDF	2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 2*5609 2N5611
5609 Abstract: DATASHEET 5609 2N5609 5609 c 2N5607 S 5609 2N5605 2N5611 ic 5611 Text: Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector saturation voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications	Original	PDF	2N5605 2N5607 2N5609 2N5611 2N5605 2N5607/5609 5609 DATASHEET 5609 5609 c S 5609 2N5611 ic 5611
2N5286 DATASHEET Abstract: 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385 Text: Device Type VCEO hFE V Min/Max @ IC (A) 2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5605 2N5607 2N5609 2N5611 2N5613 2N5615 2N5617 2N5619 2N6190 2N6192 SDT3301 SDT3302 SDT3303 SDT3304	Original	PDF	2N5003 2N5005 2N5151 2N5153 2N5286 2N5287 2N5384 2N5385 2N5404 2N5405 2N5286 DATASHEET 2N5005 2N5286 SDT3775 2N5287 2N5003 2N5151 2N5153 2N5384 2N5385
Untitled Abstract: No abstract text available Text: 2N5609 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	PDF	2N5609 O213AA) 30-Jul-02
2N5609 Abstract: voltages Text: INCHANGE Power Transistors 2N5609 Silicon PNP Transistors Features With TO-66 package Designed for use as high-frequency drivers in audio amplifier Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT 80 V Collector to emitter voltage 80 V Emitter to base voltage	Original	PDF	2N5609 2N5609 voltages
2N3775 Abstract: 2N3202 2N3203 Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF\|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203	Original	PDF	QDDD10S 2N3202 2N3203 2N3204 2N3719 2N3720 2N3775 2N3776 2N3777 2N3778
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	PDF	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
BD160 Abstract: 2SC3303 2SD1147 to-53 2sb550 Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO Of) hFE fT ICBO Max Max toN Max ON) Mln (Hz) (A) (8) PD r (CE)sat Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . .	Original	PDF	2N3192 2N1208 2N1250 2N2384 2N4902 2N5867 2N5869 2N4905 2N5068 2N4914 BD160 2SC3303 2SD1147 to-53 2sb550
2N2891 Abstract: No abstract text available Text: 8440355 SPACE POWER 89C ELECTRONICS ST SPACE POWER ELECTRONICS 00101 DE\| A4403SS Hi-Rel PLANAR POWER 5 ARSP NPN TO-5 4W@T =100°C DDDD101 b f~ TO-66 30W@T, :100°C C Breakdown Voltages TYPE CASE V 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1	Original	PDF	A4403SS DDDD101 12N2150 2N2151 2N2657 2N2658 2N2850-1 2N2851-1 2N2852-1 2N2853-1 2N2891
Untitled Abstract: No abstract text available Text: 8440355 SPACE POWER ELECTRONICS SPACE POWER ELECTRONICS , J " D -o/ 89C 00104 ST D E I A4403S5 ••DD1D4 1 30W@T =100°C C FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T Breakdown Voltages TYPE CASE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026	Original	PDF	A4403S5 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3163 2N3164 2N3165
2N3340 Abstract: 2N3581 2N2520 2N5609 2N5003 2N5005 2N5287 2N5312 2N5316 2N5607 Text: 8134693 SEMICOA MD ] e \| 0134t. ^ □□QDIE'J 1 \| _,T :<5 7 - 0 \ PNP SILICON POWER TRANSISTORS Cont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Type No. PNP Dissipation @25°C (Case) Watts 2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312	OCR Scan	PDF	2N5287 2N5003 2N5005 2N5607 2N5609 2N5316 2N5312 2N6186 2N6187 2N5853 2N3340 2N3581 2N2520 2N5609

LC51 Abstract: No abstract text available Text: HI-REL SEUELAB SEMELABE BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 2N5611 2N5612 2N5613 2N5614 2N5615 2N5616 2N5617 2N5618 2N5619 2N5620 2N5621 2N5622 2N5623 2N5629	OCR Scan	PDF	A1331 2N5602 2N5603 2N5604 2N5605 2N5606 2N5607 2N5608 2N5609 2N5610 LC51
2N5286 Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package Text: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204	OCR Scan	PDF	2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N5286 2N3196 2n5601 TO111 package
JAN2N3996 Abstract: 2N4307 ISM22 2n3183 Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100	OCR Scan	PDF
2N5385 Abstract: 2NXXXX 2N5349 2N5480 2N5672 2N5675 2N5348 2N5384 TO114 package 2N5388 Text: K lr » □ □ □ ° Q ru ru X 0» <0 Q. S E _ » < Polarity Ln u> CO K m =a o o 0 0 0 0 0 CO00 00 0 0 O O O O O CO CD 00 00 00 O O O O O 00 O O CD CD O O O O O 0 0 0 0 0 IO 10 to to 10 O O O O O in to 10 to to OOOOO to IO to Ö Ö O O O O O OOOOO OOOOO	OCR Scan	PDF	flS5402a 2N5348 O-111 2N5349 2N5384 2N5385 2NXXXX 2N5480 2N5672 2N5675 TO114 package 2N5388
KSD 166 Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801 Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5	OCR Scan	PDF	MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
1N5438 Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175 Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi	OCR Scan	PDF	27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
2NS604 Abstract: 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302 Text: -Jfolìtron P L A N A R P O W E R T R A N S IS T O R S Devices. Inc H DEVICE TYPE VCEO V hFE MIN/MAX 2N2387 2N2988 2N2S89 2N2990 2N2991 80 100 80 100 80 2N2992 2N2993 2N2994 2N3439 2N3440 ÎA M W P K M ic (A) PT MAX (W) CASE TYPE CHIP TYPE ic (A) 25/75 25/75	OCR Scan	PDF	2N2387 2N2988 2N2S89 2N2990 2N2991 2N2992 2N2993 2N2994 2N3439 2N3440 2NS604 2NS540 2NS154 SD716 SDT13305 2N5671 2N5005 SDT425 SDT7605 SDT96302
2N5286 Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562 Text: SOLITRON DEVICES INC ^ D eT\| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT	OCR Scan	PDF	2N2657 2N2658 2N2877 O-111 2N2878 2N2879 2N2880 2N5286 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
SILICON TRANSISTOR CORP Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060 Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP TVS07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V	OCR Scan	PDF	8E54022 FE20-120 30MHz fTTo40M 50MHz 2N4863 2N5662 N5663 2N5333 SILICON TRANSISTOR CORP STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
N5408 Abstract: SDT3324 N5404 2N5286 2N5609 2N5287 2n5601 2N5153 2N5333 2N5384 Text: 27 SILICON POWER TRANSISTORS CUR R E N T G A IN S A T U R A T IO f >1 VO LTA G ES @ TYPE NUMBER 5 CASE TYPE V CBO V AMP SILICON PNP V CEO V V EBO V h FE M IN . I M A X . V CE V I >C A V CE s V BE(s) V I V 'c A 1 ’b A Observe (—) Negative Polarity 2N5153	OCR Scan	PDF	2N5153 2N5286 O-111-I 2N5287 2N5333 2N5384 O-111-1 2IM5404 2IM5405 N5408 SDT3324 N5404 2N5609 2n5601

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2N5609 Price and Stock

Microchip Technology Inc 2N5609

2N5609 Datasheets (16)

2N5609 Datasheets Context Search

5609

2SB5950

2n5609 transistor

5609

5609

2N5286 DATASHEET

Untitled

2N5609

2N3775

BD119

BD160

2N2891

Untitled

2N3340

LC51

2N5286

JAN2N3996

2N5385

KSD 166

1N5438

2NS604

2N5286

SILICON TRANSISTOR CORP

N5408