2SB5950
Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Text: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect
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2N5410
9FT36
9UX78
BUX78
2SA1069AL
2N6191
2SB869
2SB933
2SB945
2SB5950
B0540C
to-53
2SB595-0
B0242c
2N3186
2N3198
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2SC3258
Abstract: 2SA1293 2SC325 2sa129
Text: Inchange Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1293 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications
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2SC3258
O-220
2SA1293
VCC30V
2SC3258
2SA1293
2SC325
2sa129
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Untitled
Abstract: No abstract text available
Text: ^S&mi-CondiLctoi ^Proaucti, One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SA1293 Silicon PNP Power Transistor DESCRIPTION • Low Collector Saturation Voltage- PIN 1.BASE I.COLLECTOR : VCE<Htr -0.4V(Max.)@lc= -3A
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2SA1293
2SC3258
O-220C
-100V
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2SA1293
Abstract: 2SC3258
Text: SavantIC Semiconductor Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications
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2SA1293
O-220
2SC3258
O-220)
VCCC30V
2SA1293
2SC3258
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2SA1293
Abstract: 2SC3258
Text: JMnic Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SC3258 ・Low collector saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING
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2SA1293
O-220
2SC3258
O-220)
VCC30V
2SA1293
2SC3258
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2SC3258
Abstract: 2SA1293
Text: SavantIC Semiconductor Product Specification 2SC3258 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1293 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications
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2SC3258
O-220
2SA1293
VCCB30V
2SC3258
2SA1293
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2SA1293
Abstract: 2SC3258
Text: Inchange Semiconductor Product Specification 2SA1293 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SC3258 ·Low collector saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications
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2SA1293
O-220
2SC3258
O-220)
VCC30V
2SA1293
2SC3258
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2SC3258
Abstract: 2SA1293
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1293 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max.)@IC= -3A ·Fast Switching Speed ·Complement to Type 2SC3258 APPLICATIONS ·Designed for high current switching applications.
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2SA1293
2SC3258
-100V;
VCC-30V,
2SC3258
2SA1293
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2SA1281
Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400
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2SA1201
2SA1202
2SA1203
2SA1204
2SA1205
2SA1206
2SA1207
2SA1208
2SA1209
2SA1210
2SA1281
2SA1277
2SA1273
2sa1274
2SA1251
2SA1218
2SA1236
2sc3248
2sa1229
2SA1267
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2SA1293
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SA1293 INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. FEATURES: 1Q.3MAX. 03.6ÌQ.2 . Low Collector Saturation Voltage : VcE sat =-0.4V(Max.) cf w - ä St<£5 at Ic=-3A . High Speed Switching Time : tstg=l.O^s(Typ.)
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2SA1293
2SC3258.
2SA1293
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A1293
Abstract: 2SA1293 2SC3258 AC75
Text: 2SA1293 TO S H IB A 2 S A 1 293 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat)= -0 .4 V (Max.) at I c = -3 A High Speed Switching Time : tstg = 1.0,«s (Typ.)
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2SA1293
2SC3258.
O-220AB
SC-46
2-10A1A
A1293
2SA1293
2SC3258
AC75
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2SA1293
Abstract: 2SC3258 AC75
Text: 2SA1293 TOSHIBA 2 S A 1 293 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at Ie = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.) Complementary to 2SC3258.
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2SA1293
2SC3258.
O-220AB
SC-46
2-10A1A
2SA1293
2SC3258
AC75
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2SA1309
Abstract: 2SA1307 2sc3180n 2SA1286 2SA1295 2SA1285 2SA1263N 2SA1264N sa1312 2SC3280
Text: - 28 - M % Ta=25t , *E[KäTc=25cC) m. 2SA1262 2SA1263N 2SA1264N 2SA1265N 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 2SA1287 2SA1289 2SA1290 2SA1291 2SA1292 2SA1293 2SA1294 2SA1295 2SA1296 2SA1297 2SA1298 2SA1299 2SA1300 2SA1301 2SA1302 2SA1303
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Ta-25cC,
2SA1262
2SA1263N
2SA1264N
2SA1265N
2SA1282
2SA1282A
2SA1283
O-92JFÃ
2SA1300
2SA1309
2SA1307
2sc3180n
2SA1286
2SA1295
2SA1285
2SA1263N
sa1312
2SC3280
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Untitled
Abstract: No abstract text available
Text: 2SA1293 TOSHIBA 2 S A 1 293 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v CE(sat) = -0.4V (Max.) at Ic = -3 A High Speed Switching Time : tstg= 1.0,«s (Typ.) Complementary to 2SC3258.
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2SA1293
2SC3258.
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2SA1293
Abstract: 2SC3258
Text: AOK ÀOK Semiconductor P ro d u c t S pecification 2SA1293 S ilicon PNP P o w er Transistors D E S C R IP T IO N • W ith T 0 2 2 0 package • C om plem ent to type 2 S C 3 25 8 • Low collector saturation voltage • High speed sw itching time A P P L IC A T IO N S
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2SA1293
2SC3258
2SA1293
2SC3258
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2SC2534
Abstract: 2SC3558
Text: m —3 Application * M AX. Atr O •O IC v CEO Type No. 2SC3558 2SC2562 2SA1012 2SC3258 2SA1293 2SD553 2SB553 2SD843 2SB753 2SC3257 SWITCHING REG. 2SA1328 2SC3346 2SA1329 2SC36Z5 A 0.6 2 0.2 f=1MHz VCB tön tstg tf (MHz) CV) (A) (pF) (V) (ms) (ß s) (ms)
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2SA1012
2SA1293
2SB553
2SB753
2SA1328
2SA1329
20MIN.
10MIN.
2SC2534
2SC3558
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2SA1293
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS U nit in mm HIGH CU RREN T SW ITCHIN G APPLICATION S. • • • 2SA1293 Low Collector Saturation Voltage : v CE(sat)= -0.4V (Max.) at I c = -3 A High Speed Switching Time : tstg = l.O^s (Typ.)
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2SA1293
2SC3258.
O-220AB
SC-46
2-10A1A
2SA1293
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UPS TOSHIBA
Abstract: 2SA1293 2SC3258 AC75
Text: TO SH IBA 2SA1293 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 293 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm ^3.6±0.2 ,1 0 .3 MAX. Low Collector Saturation Voltage : v CE(sat)= - ° - 4V (Max-)at :C = ~ 3A
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2SA1293
2SC3258.
UPS TOSHIBA
2SA1293
2SC3258
AC75
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Untitled
Abstract: No abstract text available
Text: TO SH IB A 2SA1293 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 293 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS U nit in mm Low Collector Saturation Voltage 1C. 3 MAX. : VCE(sat) ~ —0.4V (Max.) a t j# 5 6 ± 0 .£
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2SA1293
2SC3258.
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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2SA1012
Abstract: 2SA1293 2SC2562 2SC3258
Text: TOSHIBA Powered by TO-220-AB 20 20 40 40 75 75 40 40 60 80 80 100 100 20MIN. 10MIN. 10MIN. 10MIN. 8-40 8-40 12MIN. 10MIN. 10MIN 5-30 5-30 6-30 6-30 7 10 2SA1328 2SA1329 12 2 3 4 5 8 8 12 5 5 5 5 5 5 5 5 5 5 5 5 5 0.1 0.5 0.5 0.8 2 2 3 3 4 5 5 8 8 1 1 1 0.6
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08S87
20MIN.
2SA1012
2SA1293
2SC2562
2SC3258
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Untitled
Abstract: No abstract text available
Text: T ^ H T Ü 7 T T ¥ T S C R r r E 7Ö P T Ö > D T J ciDc17ES0 00075=14 T J — i^ i INDUSTRIAL APPLICATIONS U n i t i n ram FEATURES: 1Q3MAX. . Low Collector Speed Switching Time . Complementary to at 0&6± X2 k Saturation Voltage • VcE(sat =-0.4V(Max.)
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2SA1293
ciDc17ES0
2SC3258.
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2SC3216
Abstract: 2SC3217-M 2SC3214 2SA1295 2SC3264 2SC3217 2sc3246 2SC3264 2SC3215 2SA1285 2SC3251
Text: - 150 - Ta=25t , *EPÍÍTc=25t;) m 2SC3214 2SC3215 2SC3216 2SC3217—M 2SC3218-M 2SC3225 2SC3233 2SC3242 2SC3242A 2SC3243 2SC3244 2SC3245 2SC3245A 2SC3246 2SC3247 2SC3249 2SC3250 2SC3251 2SC3253 2SC3254 2SC3255 2SC3256 2SC3257 2SC3258 2SC3263 2SC3264 2SC3265
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EPttTc-25
2SC3214
2SC3215
2SC3216
2SC3217-M
800MHz
2SC3218-M
2SC3225
2SC3233
2SC3216
2SC3214
2SA1295 2SC3264
2SC3217
2sc3246
2SC3264
2SC3215
2SA1285
2SC3251
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