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    2N6579 Price and Stock

    Microchip Technology Inc 2N6579

    POWER BJT
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    Onlinecomponents.com 2N6579
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    2N6579 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6579 API Electronics Short form transistor data Short Form PDF
    2N6579 Diode Transistor Transistor Short Form Data Scan PDF
    2N6579 General Semiconductor NPN 350V / 400V / 450V 10 Amp Switching Transistor in TO-204AA (TO-3) Scan PDF
    2N6579 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6579 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6579 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6579 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6579 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6579 Unknown Transistor Replacements Scan PDF
    2N6579 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6579 New England Semiconductor NPN TO-3 Transistor Scan PDF
    2N6579 OPTEK Technology Power Switching Transistors Scan PDF
    2N6579 OPTEK Technology POWER SWITCHING TRANSISTORS Scan PDF
    2N6579 PPC Products Transistor Short Form Data Scan PDF

    2N6579 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SKC10C75

    Abstract: SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type >c Max V BR CEO (A) Of) PD Max hFE fT ON) Min (Hz) ICBO t0N r (CE)sat Toper Max Max (A) (8) Max (Ohms) Max (°C) Package Style D vices 20 Watts or More, (Cont'd) 5 10 15 20 25 30 35 40 45


    Original     		PDF XGSR7535 SPT4624 BUW22 SML02354 BUW24 XGSR10035 SVT350-5 2N6579 2N6582 SKC10C75 SKC10C70 SKC10A75 2sc2303 BUY70 STI403 2SC2650 idc33

    sdt12303

    Abstract: No abstract text available
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 >= 40 50 60 70 80 7.0 8.0 8 8.0 8.0 10 10 10 10 10 ~eneral:seml SDT7809 SDT7809 SDT7809 BUX17B BUX17B SDT14204 SDT14304 SDT14304 XGSR10030 Solltron PPC Product Sid St Dvcs GE Solid St NthAmerSemi


    Original     		PDF 2N6575 PTC6674P 2N6931 2N6250 RJH6674 2N1814 2N2114 SDT13301 SDT13201 sdt12303

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    TIS84

    Abstract: TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763
    Text: STI Type: TIP539 Notes: Polarity: NPN Power Dissipation: 125 VCEV: 400 VCEO: 300 ICEV: 400 ICEV A: 1.0 hFE: 20 hFE A: 7.5 VCE: 2.5 VBE: 2.0 IC: 15 COB: fT: 10 Case Style: TO-204AA/TO-3: Industry Type: TIP539 STI Type: TIP540 Notes: Polarity: NPN Power Dissipation: 125


    Original     		PDF TIP539 O-204AA/TO-3: TIP540 TIP54 O-218 TIP544 TIS84 TIPL763A tk8a60da 2N6571 TIS134 TK10A60D ttc5200 TK4A60DB TIS92 tipl763

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    2N6581

    Abstract: 2n6580
    Text: . General *7< 3^ Semiconductor ^ - Industries, Inc. tw itfh P/tft HIGH POWER NPN 2N6579 2N6580 2N6581 TRANSISTORS NPN 350, 400, 450V 10 AM P SW IT C H IN G t, — 250ns TYPICAL The 2N6581 series of NPN silicon transistors is designed for high speed switching


    OCR Scan     		PDF 2N6579 2N6580 2N6581 2N6581 250ns

    2N6580

    Abstract: 2N6579 2N6581 TWX910-950-1942
    Text: SÛUARE ] CO/ 6ENERAL 3918590 ^•5 GENERAL D ■ flSSSSGö OGGSIMD T ■ 95D S EMI CONDUCTOR 02140 D T "~ 3 3 - / 3 General ^ Sf* Semiconductor ^ Industries, Inc. HIGH POW ER NPN . 2N6579 2N6580 2N6581 S Q U R R E Tt C O M P H N Y Switch P/vt® TRANSISTO RS


    OCR Scan     		PDF 2N6581 -2N6579 2N6580 2N6581 570/iH O-204 23MAX 351mm> TWX910-950-1942 2N6579 TWX910-950-1942

    2n4071

    Abstract: 2N6581
    Text: GENERAL , SEMICONDUCTOR 3918590 GENERAL 72 'DE 1 3 T ÌÙ S ÌD SEMICONDUCTOR lVl^ f , General ^ 3 ^ Sem iconductor Industries, Ine . 72C 01933 □ □ □ 1 CÌ 3 3 1 3 3 -# ^ 0 _ 7 ^ NPN T R A N S IS T O R C H IP S q U H R E n CQM PRNY Typical Device Types: 2N4071, 2N6579, 2N6580, 2N6581, 2N6582, 2N6583


    OCR Scan     		PDF 2N4071, 2N6579, 2N6580, 2N6581, 2N6582, 2N6583 40nsec 350nsec 1250nsec 300nsec 2n4071 2N6581

    AP1003

    Abstract: 2N6587 2N6588 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584
    Text: 0043592 A P I ELECTRONICS A P I INC 26C 00234 EL ECTRON ICS INC 2b D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 AP1003 2N6588

    AP1012

    Abstract: AP1013 AP1005 2N6030 2N6583 2N6496 2N6579 2N6580 2N6581 2N6582
    Text: 0043592 A P I A P I ELECTRONICS ELECTRONICS INC 26C 2b INC 00234 D ]> F | DO435^5 □□□□53M h JT C O L L E C T O R C U R R E N T = 1 5 AM PS N PN T Y PE S - CONTINUED D ev ice No 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N6587 2N6588


    OCR Scan     		PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 2N6586 2N5629 AP1012 AP1013 AP1005 2N6030

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan     		PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan     		PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan     		PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    2N3902

    Abstract: 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511
    Text: SEM ICO NDU CT OR TECHNOLOGY OSE D | fll3b4Sñ □□□□S53 E | ~ 7“<- 3 3 - o / SEM ICONDUCTOR TECHNOLOGY, INC. ~ o.13l S r^ J,ay o ! ! Stuart, Florida 34997 407 283-4500 • TWX - 510-953-7511 FAX 407-286-8914 NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTO RS


    OCR Scan     		PDF A13L45B o413LS^ 2N3902 2N4347 2N5157 2N5239 2N5240 2N5466 2N5467 2N5685 2N5686 2N6511

    2N6575

    Abstract: MJ13014 2N6583 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543
    Text: Type* PUP Comp] •- VUO tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan     		PDF 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6575 MJ13014 2N6583

    2N6562

    Abstract: 2N6583 2N6560 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546
    Text: C 1IP 1 PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST BRIEAKDOV VN V OLTAGE S NPN SAT . VO LTA GES M ax. h F: E CASE V CB V CE V EB V CE (V) 'c (A) M in . Max. >C (A) 'b (A) V CE (V) V BE (V) 2N6512 TO-3 350 300 6 3 4 10 50 4 0.8 1.5 2 2N6513 TO-3 400


    OCR Scan     		PDF 2N6512 2N6513 2N6514 2N6542 2N6543 2N6544 2N6546 2N6547 2N6560 2N6561 2N6562 2N6583

    2N5330

    Abstract: SVT60-5 1N5410 2n4309 2NS330 SV050-12 cma 10012 SVT6062 to-5 package 2n5154 SV0300
    Text: OPTEK T E C H N O L O G Y b T ^ Û SÛ O 0 0 0 1 4 2 5 051 MAE D INC OTK POWER SWITCHING TRANSISTORS Screened to equivalent per JANTX or JANTXV levels on request Case Style shown actual size TO-5/39 T O -5 9 T O -6 1 Is o la te d Is o la te d Discrete Power Switching Transistors


    OCR Scan     		PDF 00014P5 O-5/39 SVT100-S O-5/39 SVT200-5C SVT250-3C SVT250-5C SVT300-3C SVT300-5C 325erature: 2N5330 SVT60-5 1N5410 2n4309 2NS330 SV050-12 cma 10012 SVT6062 to-5 package 2n5154 SV0300

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    9300

    Abstract: 2N5561 2N5330 2N3729 2N4025 2n6561 9301
    Text: SEMICOA IflE D BVce0 Range lc Max. BVeb0 Range • ûlBMbia OGOG1SE M ■ Low Current HFE Mid-Range HFE High Current HFE To V @lc mA Min. @ lc mA Min. 4 6 0.1 30 10 40 300 40 4 6 0.1 20 2 20 140 20 40 3 6 .01 15 2 30 250 20 20 2 4,3 20 60 3 7 .10 20 2 30


    OCR Scan     		PDF 2N5004 2N5005 2N5008 2N5009 2N5038 2N5039 2N5077 2N5085 2N5149 2N5150 9300 2N5561 2N5330 2N3729 2N4025 2n6561 9301

    2N5804

    Abstract: 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2N6546 2N6547
    Text: Type* PUP Comp] •- VU0 tut moni (Votto 1C Max DFE IC/VCE (Mln-Max ©A/») 2N5804 2N5805 40853 225 300 375(VCER) 5.0 5.0 10 10-100@5/4 10-100@5/4 >10@5/4 2N6249 2N6250 2N6251 40854 2N6542 2N6543 2N6544 2N6545 2N6546 2N6547 2N6560 2N6561 2N6573 2N8574 2N6575


    OCR Scan     		PDF 2N5804 2N5805 2N6249 2N6250 2N6251 2N6542 2N6543 2N6544 2NS545 2N6546 2N6547

    2N6575

    Abstract: 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276
    Text: NE li ENGLAND SEMICONDUCTOR STE D • b S b H li a OQQQQSb SO? « N E S 'T'-B&'O t NPN TO-3 2-50A V ceo sus) = 35*500V fT = 0.2-50 MHz lc ( M A X ) = VBE @ le/VCE (V @ A/V) PD @ TC = 25 °C VCEO le (SUS) (MAX) hFE @ IC/VCE VCE (SAT) @ IC/ IB (V) (A) (min-max @ A/V)


    OCR Scan     		PDF 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 5-500V 2N6575 2N6258 2N6580 2N6249 2N6250 2N6251 2N6257 2N6259 2N6262 2N6276