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    Microchip Technology Inc 2N4863

    TRANS PNP 120V 2A TO5
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    2N4863 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4863 Central Semiconductor Small Signal Transistors Original PDF
    2N4863 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=120 / Ic=2 / Hfe=50-150 / fT(Hz)=50M / Pwr(W)=4 Original PDF
    2N4863 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N4863 API Electronics Short form transistor data Short Form PDF
    2N4863 API Electronics Transistor Selection Guide Scan PDF
    2N4863 API Electronics Short form transistor data Short Form PDF
    2N4863 Central Semiconductor NPN METAL CAN Transistors Scan PDF
    2N4863 Central Semiconductor NPN Metal Can Transistors - Switching / General Purpose / Saturated Switch Scan PDF
    2N4863 Diode Transistor NPN Transistor Selection Guide Scan PDF
    2N4863 Diode Transistor Transistor Short Form Data Scan PDF
    2N4863 General Diode Transistor Selection Guide Scan PDF
    2N4863 General Transistor Power Transistor Selection Guide Scan PDF
    2N4863 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4863 Unknown Vintage Transistor Datasheets Scan PDF
    2N4863 Unknown Vintage Transistor Datasheets Scan PDF
    2N4863 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4863 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4863 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4863 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4863 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N4863 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N4863 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF 2N4863 O205AD) 17-Jul-02

    2n4863

    Abstract: No abstract text available
    Text: 2N4863 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF 2N4863 O205AD) 19-Jun-02 2n4863

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4863 NPN SILICON TRANSISTOR JEDEC TO39 (Tcs25°C unless otherwise noted) SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage VCEO Col lector Current


    Original     		PDF 2N4863 Tcs25Â 500mA, 200mA 500mA 100mA Vcc-30V,

    2N4863

    Abstract: No abstract text available
    Text: 2N4863 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 120V 0.41 (0.016)


    Original     		PDF 2N4863 O205AD) 1-Aug-02 2N4863

    2N4033

    Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) *TYP *TYP *TYP *TYP *TYP MAX MAX *ICEO *ICES *ICEV *ICER


    Original     		PDF 2N4030 2N4031 2N4032 2N4925 2N4926 2N4927 2N4928 2N4929 2N4033 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235

    2N1718

    Abstract: 2N1720 2N1714
    Text: 8440355 SPACE POWER SPACE POWER 89C ELECTRONICS 00098 D J^JS~0 DE | 5440355 ODOOOIA 0 Hi-Rel PLANAR P O W E R — 2 AMP NPN ELECTRONICS FOR D E T A I L E D S P E C I F I C A T I O N S C O N T A C T ENGINEERING MOTES I (Three Leads (Dim. .011 mln. and .019 aax.) applies between (.050


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050


    OCR Scan     		PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719

    2N4863A

    Abstract: 2N4862 2N4863 2N4864
    Text: 0043 592 A P I ELECTRONICS : 93A004S T -2 7 -0 9 TNC P I ELECTRONICS INC De | O O ^ S I S POWER TRANSISTORS ENGINEERING BULLETIN • GG_GGG4ê "1 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N4863, 2N 4864,2 AMP NPN SILICON PLANAR POWER TRANSISTORS wgm T E R M IN A L C O N N E C T O N S


    OCR Scan     		PDF 93A004S T-27-09 43ST2 2N4862/2N4863/2N4864 2N4863 2N4862 11sec; 789100V 2N4863A 2N4862 2N4863 2N4864

    2N4863

    Abstract: No abstract text available
    Text: 2N4863 Central Semiconductor Corp. Central Semiconductor Corp. NPN SILICON TRANSISTOR JEDEC TO-39 CASE 1 4 5 Adam s Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION T h e C E N T R A L S E M I C O N D U C T O R 2 N 4 8 6 3 t y p e is an e p i t a x i a l p l a n a r s i l i c o n


    OCR Scan     		PDF 2N4863 500mA, 200mA 500mA 500mA 100mA 100mA

    2N4862

    Abstract: 2N4863 TG70 2N4864 Pirgo Electronics 95a0 95A048
    Text: 0043 592 A P I ELECTRONICS TNC 95A0 48 T-g7-09_ P I ELECTRONICS INC . T3 DE 1^0435^2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS


    OCR Scan     		PDF T-g7-09 2N4862/2N4863/2N4864 2N4862, 2N4863, 2N4862 789100V 2N4862 2N4863 TG70 2N4864 Pirgo Electronics 95a0 95A048

    2N4863

    Abstract: No abstract text available
    Text: General 3^ Semiconductor ^ » Industries, Inc. 2N4863 2N4864 SILICON NPN TRANSISTORS These double diffused, epitaxial collector devices are oxide passivated. They are designed for use in switching and many amplifier applications. The latest technologies are used to provide optimum performance and the highest degree of reliability.


    OCR Scan     		PDF 2N4863 2N4864 2N4863, 2N4864, 2N4863- 300/js

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    Untitled

    Abstract: No abstract text available
    Text: Microsemi NPN Transistors Part Number NPN JANTX2N5339 JANTXV2N5339 2N5148 2N5150 2N4863 2N2657 2N4895 2N4896 2N2658 2N4897 2N3619 2N3E20 2N3627 2N3928 2N3623 2N3628 2N5541 2N5327 i 2N3675 : 2N3676 2N5237 2N5237S JAN2N5237 JAN2N5237S JANS2N5237 JANS2N5237S


    OCR Scan     		PDF

    2N4863

    Abstract: 2N4862 2N4864 TG70
    Text: 0043 592 A P I ELECTRONICS 95A0 48 T-g7-09_ TNC P I ELECTRONICS INC . T3 DE 1 ^ 0 4 3 5 ^ 2 DOOOOMfl T POWER TRANSISTORS ENGINEERING BULLETIN ID 2N4862/2N4863/2N4864 TYPE 2N 4862, 2N 4863, 2 N 4 8 6 4 ,2 AMP NPN SILICON PLANAR POW ER TRANSISTORS


    OCR Scan     		PDF T-g7-09 2N4862/2N4863/2N4864 2N4862, 2N4863, 2N4862 2N4863 789100V 2N4864 TG70

    PG2020

    Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
    Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6


    OCR Scan     		PDF 2N4862 PG1001 PG1002 PG1003 PG1004 PG1005 PG1006 PG1007 PG1008 PG1009 PG2020 PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-5/TO-39 le MAX = 0.05-10A V ce o (S U S ) NPN Power Transistors PM> VCEÛ («u») M IC (IMI) (A) hFE&c/V» (mn-mu A/V) VCE(SAT) eo b (V A/A) VBE ©IC/VCE (V© A/V) 2N1479 2N1480 2N1481 2N1482 40 55 40 55 1.5 1.5


    OCR Scan     		PDF O-5/TO-39 5-10A 2N1479 2N1480 2N1481 2N1482 2N1700 2N3418 2N3419 2N3420

    Untitled

    Abstract: No abstract text available
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T'lZ-ö! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. Vcb V CE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


    OCR Scan     		PDF 2N3302 2N3326 2N3388 2N3418 2N3419 2N3501 2N3665 2N3666 2N3678 2N3700

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h =E VCEO v EBO 'CBO v CBO (V) (HA) (V) @ lc « VCE VCE(SA T) @ >C (mA) 00 (V) (V) (mA) ''C EO *VCER *T (MHz) Cob TYP NF (PF) •on (ns) •off (ns) (dB) *TYP TYP *TYP •TYP


    OCR Scan     		PDF 2N4030 2N4031 2N4032 2N4926 2N4927 2N4928 2N4929

    2N22A

    Abstract: 2N4271 2N3947 2N3326 2N3666
    Text: CENTRAL SE MI CO NDUCT OR 1989963 CENTRAL SEMICONDUCTOR ~bî DE I n * m b 3 ODDDai? 3 '_ 61C 00217 T 'lZ - ö ! NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Cont'd. V cb VCE V EB hFE at •c VCE V V V min max mA V V 2N3302 2N3326 2N3388 2N3418 2N3419


    OCR Scan     		PDF 2n3302 to-18 2n3326 2n3388 2n3418 2n3419 n3420 2n3421 CBR30 0000S23 2N22A 2N4271 2N3947 2N3666

    2N4250

    Abstract: t0106 2N4142 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260
    Text: 0258354 ADVANCED SEMIC C IS l ^ o k l " Jcnj,v',t a d v a n ce d Ü D Ë TRANSISTORS 1 Po @ T c = 2 5 ° C DEVICE TYPE NO. 2N4142 2N4143 2M4150 2N4207 2N4208 2N4209 2N4210 2N4227 2N4228 2N4231 2N4232 2N4233 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248


    OCR Scan     		PDF 2N4142 2N4143 2N4150 2N4207 T0106 2N4208 2N4209 2N4210 2N4227 2N4250 2N4249 2N4411 2N3284 2N4248 2N4355 2N4358 2N4260

    2N2991

    Abstract: 2N2992 2N2993 2N2994 2N3665 2N3766 2N3767 2N3917 2N3918 2N4000
    Text: 0043592 A P I ELECTRONICS A P I ELECTRONICS INC 26C 00 2 1 8 I NC lit . DE I OOMBS^a ODODaia ñ COLLECTOR CURRENT = 2 AMPS NPN TYPES - CONTINUED Device No 2N2991 Case T O -5 STUD T O -5 STUD T O -5 STUD TO -5 STUD T O -5 T O -5 T O -66 T O -66 T O -3 TO -3


    OCR Scan     		PDF 2N2991 2N2992 2N2993 2N2994 2N3665 -2n3666 2N3766 2N5680 2N6211 2N6212 2N3767 2N3917 2N3918 2N4000

    2N3907

    Abstract: No abstract text available
    Text: 4ÖE D • A1331Ö7 GÜD0437 SEMELABr TbS H S n L B SEflELAB LTD 7^ 27. BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rel Code 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3997 2N3998 2N3999 2N4000 2N4001 2N4026 2N4027 2N4028


    OCR Scan     		PDF A1331Ã D0437 2N3879 2N3907 2N3919 2N3962 2N3963 2N3964 2N3965 2N3996 2N3907

    SDT423

    Abstract: No abstract text available
    Text: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A


    OCR Scan     		PDF 00D57SA 2N2150 2N2151 2N3788 2N3917 2N3918 O-111 2N3025 2N3026 SDT423

    2N4314

    Abstract: 2N4033 2N4358 2N4890 transistor 2N4033 2N4030 2N4031 2N4032 2N4036 2N4037
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO (V) h-E v CEO v EBO 'CBO v CBO (HA) (V) (V) (V) @ ic « vCE VCE(SA T) ® >C (mA) (V) 00 (mA) ''C EO *VC ER NF »T (MHz) Cob <PF) ••on (ns) •off (ns) (dB) *TYP TYP TYP •TYP


    OCR Scan     		PDF 2N4030 2N4031 2N4032 2N4033 2N4036 2N4897 2N4924 2N4925 2N4926 2N4927 2N4314 2N4358 2N4890 transistor 2N4033 2N4037