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    2N6275 Price and Stock

    Microchip Technology Inc 2N6275

    NPN TRANSISTOR
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    Microchip Technology Inc JANTXV2N6275

    Trans GP BJT NPN 120V 50A 2-Pin TO-3 - Trays (Alt: JANTXV2N6275)
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    Microchip Technology Inc JANTX2N6275

    Trans GP BJT NPN 120V 50A 2-Pin TO-3 - Trays (Alt: JANTX2N6275)
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    Microchip Technology Inc JAN2N6275

    Trans GP BJT NPN 120V 50A 2-Pin TO-3 - Trays (Alt: JAN2N6275)
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    GTCAP 2N6275

    POWER BIPOLAR TRANSISTOR, 50A I(C), 120V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-204AE, METAL, 2 PIN
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    Quest Components 2N6275 5
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    2N6275 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6275 On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=50 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=250 Original PDF
    2N6275 On Semiconductor High-Power NPN Silicon Transistor Original PDF
    2N6275 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=120 / Ic=50 / Hfe=30-120 / fT(Hz)=30M / Pwr(W)=250 Original PDF
    2N6275 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6275 API Electronics Short form transistor data Short Form PDF
    2N6275 Diode Transistor Silicon Transistors Scan PDF
    2N6275 Diode Transistor Transistor Short Form Data Scan PDF
    2N6275 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6275 Motorola The European Selection Data Book 1976 Scan PDF
    2N6275 Motorola European Master Selection Guide 1986 Scan PDF
    2N6275 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6275 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6275 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6275 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6275 Unknown Transistor Replacements Scan PDF
    2N6275 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6275 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6275 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6275 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6275 New England Semiconductor BIPOLAR NPN TRANSISTOR TO-3 Scan PDF

    2N6275 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6277

    Abstract: No abstract text available
    Text: 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector Emitter Sustaining — 50 AMPERE POWER TRANSISTORS


    Original
    PDF 2N6274 2N6275 2N6277 204AE r14525 2N6274/D 2n6277

    TC40U250

    Abstract: GENTRON ES BT082 GENTRON BT081 2SC1442 entron
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 SDT79823 SDT79823 SCA14026 SCA14027 2N6060 2N6062 2N6274 2N6278 ~~~~5~ 25 30 SCA14024 SCA14025 2N6032 2N6275 2N6279 BUT90 BUT90 BUT90 ~~~~g 35 40 BUV60 BUW50 (A) BUV20 BUX20 2N6276 2N6280 SML55405 PT7508


    Original
    PDF SML96303 TC40U250 BUR20 2N5685 PT5501 SCA14028 SCA14029 2N5686 GENTRON ES BT082 GENTRON BT081 2SC1442 entron

    Untitled

    Abstract: No abstract text available
    Text: 2N6275 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6275 O204AE) 17-Jul-02

    to204ae

    Abstract: 2N6275A
    Text: 2N6275A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6275A O204AE) 1-Aug-02 to204ae 2N6275A

    Untitled

    Abstract: No abstract text available
    Text: 2N6275A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6275A O204AE) 18-Jun-02

    2N6277

    Abstract: 2N6275 1N3879 2N6274 2N6377 2N6277 applications
    Text: ON Semiconductort 2N6274 2N6275 2N6277 * High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device 50 AMPERE POWER TRANSISTORS NPN SILICON 100, 120, 140, 150 VOLTS


    Original
    PDF 2N6274 2N6275 2N6277 204AE r14525 2N6274/D 2N6277 2N6275 1N3879 2N6274 2N6377 2N6277 applications

    Untitled

    Abstract: No abstract text available
    Text: 2N6275A Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6275A O204AE) 17-Jul-02

    power BJT

    Abstract: 2n6275 "Power BJT"
    Text: 2N6275 Si NPN Power BJT 15.98 Transistors Unsorted Transistors Other American Micr. Page 1 of 2 Enter Your Part # Home Part Number: 2N6275 Online Store 2N6275 Diodes Si NPN Power BJT Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


    Original
    PDF 2N6275 2N6275 com/2n6275 power BJT "Power BJT"

    2N6275

    Abstract: No abstract text available
    Text: 2N6275 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6275 O204AE) 1-Aug-02 2N6275

    Untitled

    Abstract: No abstract text available
    Text: <sS&mi-Conductor ^Products., Una. TELEPHONE: 201 376-2922 (212) 227-6005 FAX: (201) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6274 2N6275 2N6277 High-Power NPN Silicon TVansistors . . . designed for use In industrial-military power ampllfer and switching circuit


    Original
    PDF 2N6274 2N6275 2N6277 -150Vdc 2N6377-79 CC-80V

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


    Original
    PDF 2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100

    2N6275

    Abstract: No abstract text available
    Text: 2N6275 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original
    PDF 2N6275 O204AE) 18-Jun-02 2N6275

    LT082

    Abstract: LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800
    Text: POWER SILICON TRANSISTORS Item Number •c Part Number Manufacturer Type Max hFE fT ICBO Max t0N Max on ON Min Hz) (A) (s) 300 325 350 400 400 400 400 425 425 450 700 625 230 300 625 885 1 7k 350 530 350 V(BR)CEO Max (A) PD r <CE)Mt Max (Ohms) Toper Max


    Original
    PDF SDT55960 SML55462 PTC6683 2SD642 SML55464 D60T4040 D62T4040 SDT5825 SDT5855 SDT5826 LT082 LT081 LT089 LT081S SML55405 transistors 1U BUR20 TC15U800

    2N6277

    Abstract: 2N6277 applications 2n6275 2n6274 of transistor 2n6277 transistor 0440 MOTOROLA 2N6277
    Text: MOTOROLA Order this document by 2N6274/D SEMICONDUCTOR TECHNICAL DATA 2N6274 2N6275 2N6277* High-Power NPN Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry pow er am plifer and sw itching circuit applications. • • • • • High Collector Emitter Sustaining —


    OCR Scan
    PDF 2N6274/D 2N6274 2N6275 2N6277 2N6274 2N6275 2N6277* 97A-05 O-204AE 2N6277 applications of transistor 2n6277 transistor 0440 MOTOROLA 2N6277

    semelab 2N6287

    Abstract: 2N6378E
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


    OCR Scan
    PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687


    OCR Scan
    PDF 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327

    JANTX 2N6340

    Abstract: JANTX 2N6341 2N6338A 2N6277A 2N6274A 2N6275 2N6276 2N6322 2N6323 2N6326
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 Ic/ V c E min/max @ A/V DEVICE TYPE V ceo (sus) VOLTS Ic (max) AMPS 2N6032A 90 50 10-50@50/2.6 2N6033A 120 40 2N6274A 100 2N6275 hjT E @ VcE(Mt) @ Ic^B (V @ A/A) p * r D f T WATTS (MHz)


    OCR Scan
    PDF 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 JANTX 2N6340 JANTX 2N6341 2N6338A

    JANTX 2N6340

    Abstract: 2N6686 815 transistor 2N6032 Transistor 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE DEVICE TYPE Vceo sus VOLTS Ic (max) AMPS NPN TO-3 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 2N6338A 2N6340 2N6341A 2N6354 2N6510 2N6511 2N6512 2N6676A 2N6677 2N6678A


    OCR Scan
    PDF 2N6032A 2N6033A 2N6274A 2N6275 2N6276 2N6277A 2N6322 2N6323 2N6326 2N6327 JANTX 2N6340 2N6686 815 transistor 2N6032 Transistor

    AP1069

    Abstract: 2N6274 AP1112 to63 2N5685 2N5686 2N5926 2N6032 2N6215 2N6275
    Text: A P I ELECTRONICS INC 0043592 A P I _ 2^ ELECTRONICS DE 1 00435^5 DOODEaì S | ~ INC ZbC 00239 ~fZ33~£ COLLECTOR CURRENT = 5 0 AMPS NPN TYPES Device No C ase VCBO Volts VCEO (sus) Volts 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N6278


    OCR Scan
    PDF 2N5685 2N5686 2N5926 2N6032 2N6215 2N6274 2N6275 2N6276 2N6277 2N5968 AP1069 AP1112 to63

    2N4071

    Abstract: 2N6277 JANTX 2N6277 2N4070
    Text: A POWERHOUSE BIPOLAR Î 11 NPN PLANAR POWER T R A N S IS T O R S PACKAGE T0-204 TO-3 * ’A DEVICE TYPE PEAK ßVcEO 'c VOLTS AMPS VCE (sal) hFE min/max •C @ V CE A V max VOLTS c A @ 'b A 2N4070 100 10.0 40-120 5.0/5.0 0.6 5.0/0.5 2N4071 150 10.0 40-120


    OCR Scan
    PDF T0-204 2N4070 2N4071 2N5622 2N5624 2N5626 2N5628 2N6274* 2N6275 2N6276 2N6277 JANTX 2N6277

    DTS-425

    Abstract: 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 2N5936 2N5937
    Text: ÖM DIODE TRANSISTOR CO INC NPN TO-aiconid Typ«* PHP Comp a- Vcew sus men VolU) & hFE @IC/VCE (Min-Max @A/V> DE |SÖ4fl35E ODOOia4 3 " IS/b Ice» pd ®Vce ®VCE T c- 2 9 °c T = 1*ao (mA @ V) (Watts) (A ® ») VCEfSAT) ®IC/lB (¥ ® A/A) »BE o ic /vce


    OCR Scan
    PDF Sfi4fl35E T-33-15 Tc-29Â 2N5929 2N5930 2N5931 2N5932 2N5933 2N5934 2N5935 DTS-425 2N5936 2N5937

    IC 8030

    Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
    Text: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3


    OCR Scan
    PDF bSb4clc13 2N5933d 2N5934d 2N5935d 2N5936d 2N6677 2N6678 2N6686 2N6687 2N6688 IC 8030 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10


    OCR Scan
    PDF 5-500V 2N3773 2N3788 2N3902 2N4070 2N4071 2N4347 2N4348 2N4913 2N1487

    2n5863

    Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
    Text: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V


    OCR Scan
    PDF 0QD007fl T0-102 2n5863 MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447