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    Microchip Technology Inc 2N6281

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    2N6281 Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6281 API Electronics Short form transistor data Short Form PDF
    2N6281 Diode Transistor Silicon Transistors / TO-63 Transistors Scan PDF
    2N6281 Diode Transistor Transistor Short Form Data Scan PDF
    2N6281 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6281 General Semiconductor NPN 120V / 140V / 150V 20 Amp Switching Transistor in TO-63 Scan PDF
    2N6281 General Transistor NPN Power Transistors Scan PDF
    2N6281 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6281 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6281 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6281 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6281 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6281 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6281 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    2N6281 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6281 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6281 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6281 New England Semiconductor NPN TO-53 / TO-114 Transistor Scan PDF
    2N6281 New England Semiconductor NPN Transistors, TO-63 / TO-114 Scan PDF
    2N6281 Pirgo Electronics Low Frequency Silicon Power Transistor Scan PDF
    2N6281 PPC Products Transistor Selection Guide Scan PDF

    2N6281 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO114

    Abstract: to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279
    Text: VCE Device Type VCEO hFE V Min/Max 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 120 100 80 100 120 140 150 150 200 10/40 25/120 25/150 30/120 30/120 30/120 30/120 10/50 10/50 50.0 20.0 25.0 20.0 20.0 20.0 20.0 50.0 50.0 SDT79823 80


    Original     		PDF 2N5926 2N6060 2N6215 2N6278 2N6279 2N6280 2N6281 SDT55405 SDT55407 SDT79823 TO114 to63 SDT96304 SDT55405 SDT96306 2N5926 2N6060 2N6215 DSASW0036862 2N6279

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    D42C5

    Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is


    Original     		PDF MJE16204 MJE16204 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C D42C5 transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


    Original     		PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    Transistor 2sC1060

    Abstract: 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDW42* Darlington Complementary Silicon Power Transistors PNP BDW46 BDW47* . . . designed for general purpose and low speed switching applications. • High DC Current Gain – hFE = 2500 typ. @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:


    Original     		PDF BDW46 BDW42/BDW47 220AB BDW42* BDW47* TIP73B TIP74 TIP74A TIP74B Transistor 2sC1060 2SD460 2SC143 All similar transistor 2sa715 BU108 MJ410 2SD404 BD241C BUT56 BDW59

    2N6279

    Abstract: 2N6281 2N6280
    Text: SÛUARE D CO/ GENERAL 3918590 GENERAL =15 » • Ö5255GÖ D G Ü E 13 S SEMICONDUCTOR 95D b> 02135 D ■CR. General Sf- Semiconductor if Industries, Inc. 2N6279 2N6280 2N6281 5 0 U H H E T1 COHPBW Y 7S 33-/5" N P N S W IT C H IN G P O W E R T R A N S IS T O R S


    OCR Scan     		PDF 2N6279 2N6280 2N6281 2N62S1 10MHz 30//S 2N6281

    semelab 2N6287

    Abstract: 2N6378E
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300


    OCR Scan     		PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E

    2n6278

    Abstract: 2N6274 2N6281 2n6276 IC 4071 IC617 2N6261 2N6279
    Text: söE » TELEDYNE COMPONENTS • T^ss-tf fi^iTbag aoübsa^ b ■ NPN POWER TRANSISTORS 2N6274 thru 2N6281 50 AMP SWITCHING GEOMETRY 512 1250 W. Continuous Power 1VCEO sus to 150 V. TO -63 TO-3 (.060 Lead) t 460 «6 J i MAXIMUM RATINGS PARAMETER Coflector-Emitter Vottage


    OCR Scan     		PDF 2N6274 2N6281 2N6275 2N6278 2N6279 2N6276 2N6277 2N6280 2N6281 IC 4071 IC617 2N6261

    t066

    Abstract: 2n6354a 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285
    Text: MfiE » • 0133107 D0DD443 5EMELABI Type Number Rei Code 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317


    OCR Scan     		PDF QD0D443 2N6278 2N6279 2N6280 2N6281 2N6282 750-18k 2N6283 2N6284 t066 2n6354a 2N6285

    2n6276

    Abstract: 2n6278 2N6281
    Text: CRYSTALONCS 2805 Veterans Highway Suite 14 N.Y. 11779 R onkonkom a, NPN POWER TRANSISTORS 2N6274 thru 2N6281 50 AMP SWITCHING GEOMETRY 512 • 250 W. Continuous Power • VCEO sus to150V. TO-63 TO-3 (0 6 0 Lead) - MAXIMUM RATINGS PARAMETER SYMBOL Collector Emitter Voltage


    OCR Scan     		PDF to150V. 2N6274 2N6281 2N6275 2N6276 2N6277 2N6278 2N6279 2N6280 2N6281

    2n6324

    Abstract: 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6325 2N6326 2N6327
    Text: ^ 1 1 * II BR EAKDON /VIM V OLTAGE S hrE SAI VOLTA kGES <M ax. * < n —' m NPN DEVICE PPC PRODUCTS CORPORATION SEMICONDUCTOR SPECIALIST <C A) 2N6280 TO-63 160 140 6 4 20 30 120 20 2 1.2 2 2N6281 TO-63 180 150 6 4 20 30 120 20 2 1.2 2 2N6315 TO-66 60 60


    OCR Scan     		PDF 2N6280 2N6281 2N6315 2N6316 2N6322 2N6323 2N6324 2N6325 2N6326 2N6327

    2N558B

    Abstract: 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002
    Text: General Transistor Corporation CASE TO-63 le max = 20 to 60A V c e o (su s) NPN Power Transistors Typ*No. VCEO (•!*) <v) IC (mu) (A) hFE&C/VCE (min-mi* Q AY) VCE(SAT) QIC/IB (V0A/A) VBE ic/vce (V©A/V) VBE (SAT) ©OB (V0A/V) 2N1936 2N1937 2N3265


    OCR Scan     		PDF 0-300V 2N1936 2N1937 2N3265 2N3266 2N5250 2N5251 2N5489 2N5587 2N558B 2N558B 2N3S49 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3848 2N4002

    2N5251

    Abstract: 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114
    Text: NEU ENGLAND SEMICON DUC TOR bSbM'îSB 0 0 0 0 0 5 7 5RE T> 14 3 • Ic max = 2 0 to 6 0 A V ceo(sus) = 4 0 to 3 0 0 V fi = 0 .6 to 3 0 MHz IMPN TO-B3 Case 807 ' tc (MAX) (A) hFE @ IC/VCE (min-max @ A/V) 2N1936 2N1937 2N3265 2N3266 60 80 90 60 20 20 20 20


    OCR Scan     		PDF 000g05 2N1936 2N1937 2N3265 2N3266 1o05w1o 2n5250 2n5251 2n5489 2n5587 2N5251 2N1936 2N1937 2N3265 2N3266 2N3846 2N3847 2N3849 2N4002 TO114

    2NXXXX

    Abstract: SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2N6192 2N6193 2N6211 2N6212 2nxxx 2N6214
    Text: □ D □ a î ru ru □ Q: îC\ o o o o o CO CO co o o CM CO » E E o o o o o co co co co co o o o o o co lo io' lo r-* o o o o o r-’ n .* r-^ o o co CO co co co co co o o o d o o o o lo lo CO CO co CM CM LO LO LO o LO CM CM 1- O O O O O T- 1- CMCMCM Z Z Q -Z Z


    OCR Scan     		PDF 2N6192 2N6193 2N6211 2N6212 2N6213 2N6214 2N6215 2N6216 2N6217 2N6226 2NXXXX SILICON TRANSISTOR CORP 2N6357 transistor 2N6274 2nxxx