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    2N6050 Price and Stock

    Microchip Technology Inc 2N6050

    POWER BJT
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    Microchip Technology Inc JANTXV2N6050

    POWER BJT
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    Motorola Semiconductor Products 2N6050

    TRANSISTOR,BJT,DARLINGTON,PNP,60V V(BR)CEO,12A I(C),TO-3
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    2N6050 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6050 Comset Semiconductors Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 STMicroelectronics N-Channel 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6050 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6050 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6050 Central Semiconductor Darlington Bipolar Transistor, PNP, 60V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6050 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6050 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6050 General Electric 12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6050 Mospec POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6050 Mospec Darlington Complementary Silicon-Power Transistor Scan PDF
    2N6050 Motorola The European Selection Data Book 1976 Scan PDF
    2N6050 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6050 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6050 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6050 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6050 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6050 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6050 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


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    PDF 2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052

    2N6292

    Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


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    PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111

    2N6050

    Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059
    Text: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are


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    PDF 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


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    PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


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    PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI

    2n6050

    Abstract: 2n6057 2N6052
    Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


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    PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,

    Untitled

    Abstract: No abstract text available
    Text: 2N6050 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6050 O204AA) 16-Jul-02

    2N6050

    Abstract: No abstract text available
    Text: 2N6050 60 V - Darlington Complementary PNP Selicon Power Transistor. 1 of 2 Home Part Number: 2N6050 Online Store 2N6050 Diodes 60 Transistors V - Darlingt o n C o m plem ent ary PNP Selic o n Po w er


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    PDF 2N6050 com/2n6050 2N6050

    2SA1046

    Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


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    PDF 2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


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    PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


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    PDF 2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

    2N 6058

    Abstract: No abstract text available
    Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


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    PDF 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency


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    PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi­ taxial base PNP transistors in monolithic Darlington


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    PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059

    Untitled

    Abstract: No abstract text available
    Text: rrz SCSTWOMSON l^O !^ iti gíi®ÍMi0!gi 2N6050 SILICON PNP POWER DARLINGTON TRANSISTOR . • . . . . SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON HIGH GAIN HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL


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    PDF 2N6050 2N6050

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    2N6050

    Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
    Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.


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    PDF 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S

    2N8050

    Abstract: 2n6057 8050 npn 2n60s0 ns5 transistor Transistor Q 8050 2N6058 MOTOROLA transistor SS 8050 2n6052
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6050 Darlington Complementary Silicon Power IVansistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • High D C Current Gain — h p E = 3500 Typ @ lc = 5.0 Adc • Collector-Emitter Sustaining Voltage — @ 100 mA


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    PDF 2N6050 2N6052* 2N6057 2N605Sf 2N6050, 2N6052 2N6059 2N8050 8050 npn 2n60s0 ns5 transistor Transistor Q 8050 2N6058 MOTOROLA transistor SS 8050

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


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    PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6050

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


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    PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050

    2n60s

    Abstract: 2N6050 2N6057 2N6058
    Text: HA RR IS S E H I C O N D S E C T O R 5bE J> • 43Ü 2 27 1 Q Q M D M^ S 31fl Hi HA S 2N6050,2N6051,2N6052,2N6057,2N6058,2N6059 File Number lis a 7 = 3 3 - 0 / 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS


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    PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 12-Ampere 2N6052) 2n60s

    wf vqe 24 d

    Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058
    Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc


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    PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052

    2n6057

    Abstract: 2N6050 2N6059 2N6058 2N6051 2N6057 MOTOROLA
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2 N 60 50 D arlington C om plem entary Silicon Pow er Transistors thru . . . designed for general-purpose amplifier and low frequency switching applications. • • • High DC Current Gain —


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    PDF 2N6050/D 2N6050, 2N6057 2N6058 2N6052, 2N6059 2N6059F O-204AA 2N6050 2N6051 2N6057 MOTOROLA