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Microchip Technology Inc 2N6051 PNP POWER TRANSISTOR SILICON AMP
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Onlinecomponents.com	2N6051					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
NAC	2N6051	Tray			6	1 $51.69 10 $51.69 100 $47.61 1000 $44.12 10000 $44.12	Buy Now
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Master Electronics	2N6051					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
Microchip Technology Inc JAN2N6051 TRANS PNP DARL 80V 12A TO3
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DigiKey	JAN2N6051	Bulk			100	1 - 10 - 100 $47.5103 1000 $47.5103 10000 $47.5103	Buy Now
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Microchip Technology Inc	JAN2N6051		794	36 Weeks		1 $51.17 10 $51.17 100 $51.17 1000 $51.17 10000 $51.17	Buy Now
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Master Electronics	JAN2N6051					1 - 10 - 100 $45.37 1000 $45.37 10000 $45.37	Buy Now
Microchip Technology Inc JANTX2N6051 TRANS PNP DARL 80V 12A TO204AA
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Microchip Technology Inc	JANTX2N6051		792	36 Weeks		1 $60.9 10 $60.9 100 $60.9 1000 $60.9 10000 $60.9	Buy Now
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Master Electronics	JANTX2N6051					1 $63.97 10 $57.24 100 $52.9 1000 $52.9 10000 $52.9	Buy Now
Microchip Technology Inc JANTXV2N6051 TRANS PNP DARL 80V 12A TO3
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Microchip Technology Inc	JANTXV2N6051			36 Weeks		1 $96.89 10 $96.89 100 $96.89 1000 $96.89 10000 $96.89	Buy Now
NAC	JANTXV2N6051	Tray			3	1 $98.86 10 $98.86 100 $91.05 1000 $84.39 10000 $84.39	Buy Now

Master Electronics	JANTXV2N6051					1 - 10 - 100 $88.61 1000 $88.61 10000 $88.61	Buy Now
Central Semiconductor Corp 2N6051 Trans Darlington PNP 80V 12A 2-Pin TO-3 Bag - Rail/Tube (Alt: 2N6051)
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Avnet Americas	2N6051	Tube	120		20	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2N6051 Datasheets (47)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6051	Comset Semiconductors	Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6051	Microsemi	PNP Darlington Power Silicon Transistor	Original	PDF
2N6051	Motorola	Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6051	Semelab	Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6051	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6051	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6051	Central Semiconductor	Darlington Bipolar Transistor, PNP, 80V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6051	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF
2N6051	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF
2N6051	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF
2N6051	General Electric	12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6051	LAMBDA	Semiconductor Data Book V1 1988	Scan	PDF
2N6051	Mospec	POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6051	Motorola	The European Selection Data Book 1976	Scan	PDF

2N6051	Motorola	Power Transistor Selection Guide	Scan	PDF
2N6051	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6051	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2N6051	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2N6051	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2N6051	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF

2N6051 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6050 Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059 Text: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are	Original	PDF	2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057
2N6052 Abstract: 2N6051 1000C 100C JANTX 2N6052 Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	PDF	MIL-PRF-19500/501 2N6051 2N6052 1000C O-204AA) 2N6052 2N6051 1000C 100C JANTX 2N6052
Untitled Abstract: No abstract text available Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6051 O204AA) 16-Jul-02
2N605 Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc	Original	PDF	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
2n6050 Abstract: 2n6057 2N6052 Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base	Original	PDF	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,
2N6051 Abstract: No abstract text available Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6051 O204AA) 31-Jul-02 2N6051
Untitled Abstract: No abstract text available Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6051 O204AA) 18-Jun-02
2N6052 Abstract: 1000C 100C 2N6051 Text: TECHNICAL DATA 2N6051 JAN, JTX, JTXV 2N6052 JAN, JTX, JTXV Processed per MIL-PRF-19500/501 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current	Original	PDF	2N6051 2N6052 MIL-PRF-19500/501 1000C 2N6051 2N6052 O-204AA) 1000C 100C
2N6050 Abstract: 2N6057 2N6052 2N6051 2N6059 2N6058 Text: 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n n n n 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES HIGH GAIN HIGH CURRENT HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic	Original	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058
Untitled Abstract: No abstract text available Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80	Original	PDF	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6282 2N6283 2N6284 2N6285
transistor 206 Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285 Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3	OCR Scan	PDF	2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059
BU406O Abstract: 2N5876 bu409 Text: EPITAXIAL BASE TO-3 continued Vc»o (V ) V -1o lc (V ) (A ) <W) 1 0 0 /8 0 80 60 10 7 115 80 7 115 3 /2 35 0 .5 /4 35 0 .5 /4 60 10 150 20 80 80 150 2N 6053 2N 6054 60 80 60 80 10 8 100 20 750 8 100 2N 6050 60 60 12 2N6051 2N 6052 80 80 12 100 100 12 NPN	OCR Scan	PDF	2N5871 2N6051 T0-220 BU406O 2N5876 bu409
Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3	OCR Scan	PDF	2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A
2N 6058 Abstract: No abstract text available Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)	OCR Scan	PDF	2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

2N6052 Abstract: No abstract text available Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058	OCR Scan	PDF	2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052
Untitled Abstract: No abstract text available Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency	OCR Scan	PDF	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058
Untitled Abstract: No abstract text available Text: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi taxial base PNP transistors in monolithic Darlington	OCR Scan	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059
RCA-2N6050 Abstract: n6050 2N60S Text: 3875081 6 E SOLID STATE Ql DE \| 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	PDF	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S
2N6050 Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.	OCR Scan	PDF	2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S
2N6220 Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079	OCR Scan	PDF	2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60
2N6050 Abstract: No abstract text available Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon	OCR Scan	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050
2N6059 Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059	OCR Scan	PDF	2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn
wf vqe 24 d Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058 Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc	OCR Scan	PDF	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052
2N6059 Abstract: 2N6050 2N6057 2N6051 2N6052 2N6058 2n6052 sgs N6050 SGS transistors n6052 Text: « SGS-THOMSON WM RflDeœillLiO'irifiiOlsaDOS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES . HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon	OCR Scan	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058 2n6052 sgs N6050 SGS transistors n6052

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2N6051 Datasheets (47)

2N6051 Datasheets Context Search

2N6050

2N6052

Untitled

2N605

2n6050

2N6051

Untitled

2N6052

2N6050

Untitled

transistor 206

BU406O

Untitled

2N 6058

2N6052

Untitled

Untitled

RCA-2N6050

2N6050

2N6220

2N6050

2N6059

wf vqe 24 d

2N6059