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    2N7370 Price and Stock

    Microchip Technology Inc 2N7370

    POWER BJT
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    Microchip Technology Inc JAN2N7370

    TRANS NPN DARL 100V 12A TO254AA
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    Microchip Technology Inc JANTXV2N7370

    TRANS NPN DARL 100V 12A TO254AA
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    Microchip Technology Inc JANTX2N7370

    Power BJT _ TO-254, Projected EOL: 2049-02-05
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    Microchip Technology Inc JANTXV2N7370-LC

    Power BJT
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    2N7370 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N7370 Microsemi NPN Darlington Transistor Original PDF
    2N7370 New England Semiconductor BIPOLAR DARLINGTON PNP TRANSISTOR Scan PDF
    2N7370 New England Semiconductor BIPOLAR DARLINGTON Scan PDF
    2N7370JAN New England Semiconductor BJT, NPN, Darlington Power Transistor, IC 12A Original PDF
    2N7370JAN New England Semiconductor NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Original PDF
    2N7370JANTX New England Semiconductor NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Original PDF
    2N7370JANTXV New England Semiconductor NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Original PDF
    2N7370JTX New England Semiconductor BJT, NPN, Darlington Power Transistor, IC 12A Original PDF
    2N7370JTXV New England Semiconductor BJT, NPN, Darlington Power Transistor, IC 12A Original PDF

    2N7370 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N7370 Available on commercial versions NPN Darlington High Power Silicon Transistor Qualified per MIL-PRF-19500/624 Qualified Levels: JAN, JANTX, and JANTXV DESCRIPTION This high power NPN transistor is rated at 12 amps and is military qualified up to the JANTXV


    Original     		PDF 2N7370 MIL-PRF-19500/624 O-254AA MIL-PRF-19500/624. T4-LDS-0208,

    2N7370

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN DARLINGTON HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/624 Devices Qualified Level 2N7370 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF MIL-PRF-19500/624 2N7370 O-254* 2N7370

    2N7370

    Abstract: No abstract text available
    Text: TECHNICAL DATA 2N7370 JAN, JTX, JTXV Processed per MIL-PRF-19500/624 NPN HIGH-POWER DARLINGTON SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = 250C 1


    Original     		PDF 2N7370 MIL-PRF-19500/624 O-254

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    Untitled

    Abstract: No abstract text available
    Text: INCH–POUND MIL–PRF–19500/624E 31 December 2012 SUPERSEDING MIL–PRF–19500/624D 18 June 2009 See 6.4 The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 March 2013. PERFORMANCE SPECIFICATION SHEET


    Original     		PDF 19500/624E 19500/624D 2N7370,

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


    Original     		PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    MIL-PRF-19500

    Abstract: 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415
    Text: New England Semiconductor Announces Its Certified Mil-Prf-19500 JANS Program. JANS Qualification Lots In Process By Family Mil-Prf-19500/251 -2N2219 Mil-Prf-19500/291 -2N2907A Mil-Prf-19500/455 -2N5665 Mil-Prf-19500/251 -2N2219A Mil-Prf-19500/291 -2N2907AUA


    Original     		PDF Mil-Prf-19500 Mil-Prf-19500/251 -2N2219 -2N2219A -2N2219AL Mil-Prf-19500/255 -2N2222A 2N4033 2N3055 2N5038 JANS 2n2222au MIL-PRF-19500/336 MIL-PRF-19500/2n7588 MIL-PRF-19500/391 mil-prf-19500/JANTXV2N6341 2N5415

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6282 2N6283 2N6284 2N6285

    2N7370

    Abstract: K 3053 TRANSISTOR 2n6059 equivalent 2N6059 C-2688 TO254-AA
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 September 2009. MIL-PRF-19500/624D 18 June 2009 SUPERSEDING MIL-PRF-19500/624C 2 June 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DARLINGTON TRANSISTOR, NPN, SILICON, HIGH-POWER,


    Original     		PDF MIL-PRF-19500/624D MIL-PRF-19500/624C 2N7370, MIL-PRF-19500. 2N7370 K 3053 TRANSISTOR 2n6059 equivalent 2N6059 C-2688 TO254-AA

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN DARLINGTON HIGH POWER


    Original     		PDF MIL-PRF-19500/624 2N7370 O-254AA) T4-LDS-0208

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

    2N6057A

    Abstract: 2N6058A 2N6282 TO-204AA transistor transistor 206 2N7370 2N6050 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR 2N6050 60 2N6051A hpE @ V VCE ^CE sat min/max @ A/V @ Ic/Iß V @ A/A C<p P (MHz) 12 750/18000@6/3 2.0@6/.024 500 4.0 80 12 750/18000@6/3 2.0@6/.024 500 4.0 2N6052A 100 12 750/18000@6/3 2.0@6/.024


    OCR Scan     		PDF 2N6050 O-204AA 2N6051A 2N6052A 2N6285 2N6286A 2N6287A O-254AA 2N7371A 2N6057A 2N6058A 2N6282 TO-204AA transistor transistor 206 2N7370