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    2N605 Search Results

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    2N605 Price and Stock

    Microchip Technology Inc JANTX2N6058

    TRANS NPN DARL 80V 12A TO3
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    Microchip Technology Inc JANTX2N6052

    TRANS PNP DARL 100V 12A TO204AA
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    Microchip Technology Inc 2N6050

    POWER BJT
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    Microchip Technology Inc 2N6052

    PNP POWER TRANSISTOR SILICON AMP
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    onsemi 2N6052

    TRANS PNP DARL 100V 12A TO204
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    2N605 Datasheets (391)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N605 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N605 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N605 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N605 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N605 Unknown Vintage Transistor Datasheets Scan PDF
    2N605 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N605 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N605 Unknown GE Transistor Specifications Scan PDF
    2N605 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6050 Comset Semiconductors Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 STMicroelectronics N-Channel 800V - 2.5W - 3.8A - TO-220 FAST POWER MOS TRANSISTOR - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6050 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6050 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6050 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6050 Central Semiconductor Darlington Bipolar Transistor, PNP, 60V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6050 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6050 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6050 General Electric 12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    ...

    2N605 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6058

    Abstract: 2N6059
    Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear


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    PDF 2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059

    2N6054

    Abstract: 2N6053 2N6055 2N6056
    Text: Inchange Semiconductor Product Specification 2N6053 2N6054 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low


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    PDF 2N6053 2N6054 2N6055 2N6056 2N6053 2N6054 2N6056

    2N6055

    Abstract: 2N6056 2N6053 2N6054
    Text: Inchange Semiconductor Product Specification 2N6055 2N6056 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6053;2N6054 APPLICATIONS ·General-purpose power amplifier and low


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    PDF 2N6055 2N6056 2N6053 2N6054 2N6055 2N6056 2N6054

    2N6057

    Abstract: No abstract text available
    Text: 2N6057 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6057 O204AA) 31-Jul-02 2N6057

    2N6055

    Abstract: No abstract text available
    Text: 2N6055 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6055 O204AA) 31-Jul-02 2N6055

    2N6056

    Abstract: No abstract text available
    Text: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6056 O204AA) 31-Jul-02 2N6056

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


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    PDF 2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052

    2N6292

    Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


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    PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111

    2N6050

    Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059
    Text: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are


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    PDF 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057

    2n6053

    Abstract: No abstract text available
    Text: ductoi ^Pioducii, Unc. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6053/2N6055 COMPLEMENTARY POWER DARLINGTON The 2N6053 Is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and


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    PDF 2N6053/2N6055 2N6053 2N6055 2N6053

    2N6052

    Abstract: 2N6051 1000C 100C JANTX 2N6052
    Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF MIL-PRF-19500/501 2N6051 2N6052 1000C O-204AA) 2N6052 2N6051 1000C 100C JANTX 2N6052

    Untitled

    Abstract: No abstract text available
    Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6051 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6054 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6054 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6056 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6056 O204AA) 16-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N6058+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.750


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    PDF 2N6058

    Untitled

    Abstract: No abstract text available
    Text: 2N6059+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750


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    PDF 2N6059

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


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    PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    BU406O

    Abstract: 2N5876 bu409
    Text: EPITAXIAL BASE TO-3 continued Vc»o (V ) V -1o lc (V ) (A ) <W) 1 0 0 /8 0 80 60 10 7 115 80 7 115 3 /2 35 0 .5 /4 35 0 .5 /4 60 10 150 20 80 80 150 2N 6053 2N 6054 60 80 60 80 10 8 100 20 750 8 100 2N 6050 60 60 12 2N6051 2N 6052 80 80 12 100 100 12 NPN


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    PDF 2N5871 2N6051 T0-220 BU406O 2N5876 bu409

    2N6055

    Abstract: 2N6053 2N6054 2N6056 2N6055 transistor 2N6052
    Text: Data Sheet Central Semiconductor Corp. 2N6053 2N6054 PNP 2N6055 2N6056 NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-3 CASE Manufacturers of W orld Class Discrete Semiconductors


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    PDF 2N6053 2N6054 2N6055 2N6056 2N6053, 2N6055) 2N6054, 2N6056) 2N6055 transistor 2N6052

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


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    PDF 2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

    2N6055 MOTOROLA

    Abstract: 2N6055 2N6055 transistor 2N6056
    Text: MOTOROLA Order this document by 2N6055/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 60 55 2 N6056* D arlington C om plem entary Silicon Pow er Transistors ‘ Motorola Preferred Device . . . designed for general-purpose amplifier and low frequency switching applications.


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    PDF 2N6055/D 2N6055 2N6056 N6056* O-204AA 2N6055 MOTOROLA 2N6055 2N6055 transistor

    2N 6058

    Abstract: No abstract text available
    Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


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    PDF 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    2N6052

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


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    PDF 2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052