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    2N5886 Search Results

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    2N5886 Price and Stock

    Microchip Technology Inc 2N5886

    PNP POWER TRANSISTOR SILICON AMP
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    DigiKey 2N5886 Bulk 100
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    Mouser Electronics 2N5886
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    Verical 2N5886 15 15
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    Microchip Technology Inc 2N5886 36 Weeks
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    Onlinecomponents.com 2N5886
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    NAC 2N5886 Tray 5
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    Avnet Silica 2N5886 38 Weeks 100
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    Master Electronics 2N5886
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    onsemi 2N5886G

    TRANS NPN 80V 25A TO204
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    Bristol Electronics 2N5886G 7
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    Rochester Electronics 2N5886G 1
    • 1 $3.65
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    SPC Multicomp 2N5886.

    Transistor, Npn To-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:80V; Transistor Case Style:To-3; No. Of Pins:2; Svhc:No Svhc (19-Dec-2011); Av Current Ic:25A; Continuous Collector Current Ic Max:25A; Current Ic Rohs Compliant: No |Multicomp Pro 2N5886.
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    Newark 2N5886. Bulk 1
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    Motorola Semiconductor Products 2N5886

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    Bristol Electronics 2N5886 194
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    Quest Components 2N5886 6
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    2N5886 2
    • 1 $5.2599
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    2N5886 1
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    ComSIT USA 2N5886 259
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    ES Components 2N5886 99
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    WALBERN DEVICES INC. 2N5886

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    Bristol Electronics 2N5886 19
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    Find more 2N5886 price and stock on Findchips.com

    2N5886 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5886 Motorola Complementary Silicon High Power Transistors Original PDF
    2N5886 On Semiconductor Complementary Silicon High-Power Transistors Original PDF
    2N5886 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5886 STMicroelectronics TRANS GP BJT NPN 80V 25A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5886 STMicroelectronics COMPLEMENTARY SILICON HIGH POWER TRANSISTORS Original PDF
    2N5886 STMicroelectronics HIGH CURRENT SILICON NPN POWER TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Original PDF
    2N5886 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N5886 API Electronics 25 Amp Transistors Scan PDF
    2N5886 Boca Semiconductor COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5886 Central Semiconductor Leaded Power Transistor General Purpose Scan PDF
    2N5886 Diode Transistor Transistor Short Form Data Scan PDF
    2N5886 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N5886 General Electric High-current, high-power, high-speed power transistor. 80V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5886 Mospec POWER TRANSISTORS(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=25 / Hfe=20-100 / fT(Hz)=4M / Pwr(W)=200 Scan PDF
    2N5886 Mospec Complementary Silicon High-Power Transistor Scan PDF
    2N5886 Motorola The European Selection Data Book 1976 Scan PDF
    2N5886 Motorola European Master Selection Guide 1986 Scan PDF
    2N5886 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N5886 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5886 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N5886 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5884

    Abstract: 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885 2N5886
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA 2N5883/D 2N5884G 2N5886G 2N5984 2N5885G 2N5883 2N5883G 2N5885

    2N5884

    Abstract: 2N5886
    Text: 2N5884 2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT


    Original     		PDF 2N5884 2N5886 2N5884 2N5886

    NPN Transistor 1A metal switching

    Abstract: 2N5886
    Text: 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN


    Original     		PDF 2N5886 2N5886 NPN Transistor 1A metal switching

    2N3265

    Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
    Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO V 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00


    Original     		PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858

    Untitled

    Abstract: No abstract text available
    Text: 2N5886 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5886 O204AA) 18-Jun-02

    IRF 548

    Abstract: irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800
    Text: Semiconductor Directory Mfr.Õs Type 13 Price Mfr.Õs Code Page Mfr.Õs Type Mfr.Õs Code Page 0.05 0.28 0.25 0.30 0.22 GIS ONS ONS ONS ONS 812 851 851 849 849 2N5886 2N6027 2N6028 2N6031 2N6035 Price Mfr.Õs Type Mfr.Õs Code Page 2.23 0.24 0.23 3.12 0.39


    Original     		PDF 1N5333B 1N914 2N5886 30WQ04FN 1N5335B 1SMB15AT3 2N6027 30WQ06FN 1N5336B 2N6028 IRF 548 irf 1244 IRF 547 IRF 725 irf 846 IRF 024 fsc 2n7000 IRF 850 irf818 iRF 800

    2N5886

    Abstract: No abstract text available
    Text: 2N5886 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N5886 O204AA) 31-Jul-02 2N5886

    2N5886

    Abstract: 2N5885 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N5885 2N5886 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5883 2N5884 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5885 2N5886 2N5883 2N5884 2N5885 2N5886 2N5884

    2N5886G

    Abstract: 2N5886 2N5885G IB 115 2N5883 2N5884 2N5883G 2N5884G 2N5885 2N5984
    Text: 2N5883, 2N5884 PNP 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Features


    Original     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5884 2N5886 O-204AA O-204AA 2N5886G 2N5885G IB 115 2N5883 2N5883G 2N5884G 2N5885 2N5984

    2N5886

    Abstract: No abstract text available
    Text: 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN


    Original     		PDF 2N5886 2N5886

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


    Original     		PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI

    2SA1046

    Abstract: BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. • Low Collector–Emitter Saturation Voltage — VCE sat = 1.0 Vdc, (max) at IC = 15 Adc


    Original     		PDF 2N5883 2N5884* 2N5885 2N5886* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SA1046 BU108 TR TO126 BD139 BUV98A equivalent BU326 BU100 mje15033 replacement

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: SavantIC Semiconductor Product Specification 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N5885 2N5886 ·High power dissipations APPLICATIONS ·They are intended for use in power linear and switching applications


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    2N5984

    Abstract: 2N5886 2N5883 2N5884 2N5885
    Text: PNP 2N5883, 2N5884*, NPN 2N5885, 2N5886* Preferred Device Complementary Silicon High-Power Transistors . . . designed for general–purpose power amplifier and switching applications. http://onsemi.com • Low Collector–Emitter Saturation Voltage – 25 AMPERE COMPLEMENTARY


    Original     		PDF 2N5883, 2N5884* 2N5885, 2N5886* r14525 2N5883/D 2N5984 2N5886 2N5883 2N5884 2N5885

    2N5883

    Abstract: 2N5884 2N5885 2N5886
    Text: Product Specification www.jmnic.com 2N5883 2N5884 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5885 2N5886 APPLICATIONS ・They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION


    Original     		PDF 2N5883 2N5884 2N5885 2N5886 2N5883 2N5884 2N5886

    2N5885

    Abstract: 2N 5883 2n 5886
    Text: TYPES 2N5885, 2N5886 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH 2N 5883, 2N 5884 • 200 Watts at 25°C Case Temperature • 25-A Rated Continuous Collector Current


    OCR Scan     		PDF 2N5885, 2N5886 90-mJ 2N5885 2N5885 2N 5883 2n 5886

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON Rf¡lD E[3 i[LiOT[3(s iD(Ei 2N5883/2N5885 2N5884/2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . 2N5884, 2N5885 AND 2N5886 ARE SGS-THOMSON PREFERRED SALESTYPES DESCRIPTION The 2N5885 and 2N5886 are silicon epitaxial-base NPN power transistor in Jedec


    OCR Scan     		PDF 2N5883/2N5885 2N5884/2N5886 2N5884, 2N5885 2N5886 2N5885 2N5886 2N5883 2N5884 2N5883/2N5884/2N5885/2N5886

    2N5886

    Abstract: 2N5883 2N5884 2N5885 S200 40 amp collector current CWB-10
    Text: 2N5883, 2N5884 PNP I 2N5885, 2N5886 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( lc = 200 mA, lB = 0 ) 2N5883, 2N5885 2N5884, 2N5886


    OCR Scan     		PDF 2N5883, 2N5884 2N5885, 2N5886 2N5885 2N5884, 2N5886 2N5885 2N5883 S200 40 amp collector current CWB-10

    BUT36

    Abstract: BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98 2N5883 2N5884 2N5885
    Text: POWER TRANSISTORS — BIPOLAR METAL continued TO-2Q4AA (FORMERLY TO-3) (continued) R esistive S w itching h lcCont VcEO (sus) Amps Max Volts Min 24 1000 25 60 2N5885 2N5883 80 2N5886 2N5884 2N6436 100 2N6338 120 2N6339 125 BUV10 BUX10 28 30 50 @ lc MHZ Watts


    OCR Scan     		PDF BUT36 2N5885 2N5883 2N5886 2N5884 2N6436 2N6338 2N6437 2N6339 2N6438 BUT36 BUT14 BUT35 mj11016 transistors but35 2N5885 MOTOROLA BUS98

    1501-33

    Abstract: 2N5686 2N5860 2N5745 45020 2N5301 2N5303 2N5880 2N5881 2N5882
    Text: Typ#* PNP Compls- VCEUSIM lc mont Voltt) M u 2N5881 2N5882 2NS879 2NS880 2N5301 2NS302 2N5303 2N5885 2N5886 2N6326 2N6327 2N632B MJ802 MJ3771 MJ3772 2N4398 2N4399 2N5745 2N5883 2N5884 2H6329 2N6330 2N6331 2N5685 2N5686 MJ14000 MJ14002 2N5683 2N5684 MJ14001


    OCR Scan     		PDF Tc-25Â 2N5881 2N5882 2NS879 2N5880 2N5301 2NS302 2N5303 2N5885 2N5886 1501-33 2N5686 2N5860 2N5745 45020

    2N2820

    Abstract: 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340
    Text: "i T _ 0043592 A P I ELECTRONICS INC p I ELECTRONICS INC 26C 0 0 2 3 6 “ 7k D 7^.3? Je|WsÍ1mD53iT D | CO LLECTO R CURRENT = 2 5 AMPS NPN TY PE S D evice No C ase v CBO Volts 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 TO -63


    OCR Scan     		PDF 000D53J 2N2820 2N2821 2N2822 2N3265 2N3266 2N5885 2N5886 2N6338 2N6320 2N6339 2N6340

    Untitled

    Abstract: No abstract text available
    Text: i IT ¡electronics . SILICON EPITAXIAL NPN TRANSISTOR '• E - - Semelab Limited 2N5886 Hermetic T03 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available


    OCR Scan     		PDF 2N5886

    2N5886

    Abstract: 2n5884 2N5883
    Text: MOTOROLA O rder this docum ent by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 2N5884* NPN 2N5885 2N5886* Complementary Silicon High-Power Transistors . . . designed for general-purpose power amplifier and switching applications. • • • • Low C ollector-Em itter Saturation Voltage —


    OCR Scan     		PDF 2N5883/D 2N5883 2N5884* 2N5885 2N5886* O-204AA 2N5886 2n5884

    ot 409

    Abstract: No abstract text available
    Text: SGS-THOMSON !LiM iO gS 2N5884 2N5886 COMPLEMENTARY SILICON HIGH POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . HIGH CURRENT CAPABILITY APPLICATIONS . GENERAL PURPOSE SWITCHING AND AMPLIFIER . LINEAR AND SWITCHING INDUSTRIAL


    OCR Scan     		PDF 2N5884 2N5886 2N5886 ot 409