Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTP01N100D Search Results

    SF Impression Pixel

    IXTP01N100D Price and Stock

    Littelfuse Inc IXTP01N100D

    MOSFET N-CH 1000V 400MA TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP01N100D Tube 191 1
    • 1 $7.09
    • 10 $7.09
    • 100 $7.09
    • 1000 $3.57324
    • 10000 $3.57324
    		Buy Now
    Newark IXTP01N100D Bulk 205 1
    • 1 $6.95
    • 10 $6.95
    • 100 $3.86
    • 1000 $3.52
    • 10000 $3.52
    		Buy Now

    IXYS Corporation IXTP01N100D

    MOSFETs 0.1 Amps 1000V 110 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTP01N100D 386
    • 1 $6.96
    • 10 $6.55
    • 100 $3.81
    • 1000 $3.57
    • 10000 $3.57
    		Buy Now
    Future Electronics IXTP01N100D Tube 29 Weeks 300
    • 1 -
    • 10 -
    • 100 $3.49
    • 1000 $3.49
    • 10000 $3.49
    		Buy Now
    TTI IXTP01N100D Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.57
    • 10000 $3.57
    		Buy Now
    TME IXTP01N100D 180 1
    • 1 $6.31
    • 10 $5.56
    • 100 $4.65
    • 1000 $4.21
    • 10000 $4.21
    		Buy Now
    ComSIT USA IXTP01N100D 8
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    New Advantage Corporation IXTP01N100D 200 1
    • 1 -
    • 10 -
    • 100 $8.81
    • 1000 $8.22
    • 10000 $8.22
    		Buy Now

    IXTP01N100D Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTP01N100D IXYS 1000V high voltage MOSFET Original PDF

    IXTP01N100D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP01N100D

    Abstract: 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V
    Text: IXTY01N100D IXTU01N100D IXTP01N100D High Voltage Power MOSFET VDSX = ≤ RDS on N-Channel, Depletion Mode 1000V 80Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 O-220) TY01N100D 100ms IXTP01N100D 01N100D TO-251 weight IXTU01N100D IXTY01N100D IXTP01N100 depletion mode mosfet n-channel 1000V

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Power MOSFET VDSX IXTY01N100D IXTU01N100D IXTP01N100D = ≤ RDS on 1000V 80Ω Ω N-Channel, Depletion Mode TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C 1000 V TO-251 (IXTU)


    Original     		PDF IXTY01N100D IXTU01N100D IXTP01N100D O-252 O-251 100ms 01N100D

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


    Original     		PDF IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D

    IXTD24P20

    Abstract: depletion mode mosfet 01N100D-1M DEPLETION P-Channel Depletion Mosfet IXTH36P10 IXTD24P20-7B IXTD36P10-5B P-Channel Depletion Mosfets IXTH50P10
    Text: Chip-Shortform2004.pmd N-Channel Depletion Mode MOSFET Type VDSS max. RDSon max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 12 V Ω mm mils IXTD 02N50D-1M 500 30 1M 1.96 x 1.68 77 x 66 3 mil x 1 IXTP 02N50D IXTD 01N100D-1M


    Original     		PDF 02N50D-1M 01N100D-1M 02N50D 01N100D IXTD36P10-5B IXTD50P10-7B IXTD16P20-5B IXTD24P20-7B IXTD8P50-5B IXTD11P50-7B IXTD24P20 depletion mode mosfet DEPLETION P-Channel Depletion Mosfet IXTH36P10 P-Channel Depletion Mosfets IXTH50P10

    depletion mode mosfet

    Abstract: No abstract text available
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs The High Performance MOSFET family of Pow er MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete, fast recovery "free wheeling diodes" in a


    OCR Scan     		PDF ISOPLUS220TM ISOPLUS220 depletion mode mosfet