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    IXTH10N100D Search Results

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    IXTH10N100D Price and Stock

    Littelfuse Inc IXTH10N100D2

    MOSFET N-CH 1000V 10A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH10N100D2 Tube 730 1
    • 1 $18.5
    • 10 $18.5
    • 100 $12.21967
    • 1000 $18.5
    • 10000 $18.5
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    Verical IXTH10N100D2 120 30
    • 1 -
    • 10 -
    • 100 $9.363
    • 1000 $9.251
    • 10000 $9.251
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    Arrow Electronics IXTH10N100D2 120 57 Weeks 30
    • 1 -
    • 10 -
    • 100 $9.363
    • 1000 $9.251
    • 10000 $9.251
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    Newark IXTH10N100D2 Bulk 520 1
    • 1 $18.13
    • 10 $15.05
    • 100 $11.97
    • 1000 $11.71
    • 10000 $11.71
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    Littelfuse Inc IXTH10N100D

    MOSFET N-CH 1000V 10A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH10N100D Tube 300
    • 1 -
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    • 100 -
    • 1000 $14.16973
    • 10000 $14.16973
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    Newark IXTH10N100D Bulk 300
    • 1 -
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    • 100 -
    • 1000 $14.85
    • 10000 $14.85
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    IXYS Corporation IXTH10N100D2

    MOSFETs TO247 1KV 10A N-CH DEPL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTH10N100D2 433
    • 1 $17.69
    • 10 $16.3
    • 100 $12.21
    • 1000 $11.94
    • 10000 $11.94
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    TTI IXTH10N100D2 Tube 300
    • 1 -
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    • 100 -
    • 1000 $11.95
    • 10000 $11.95
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    TME IXTH10N100D2 1
    • 1 $18.13
    • 10 $14.88
    • 100 $14.4
    • 1000 $13.21
    • 10000 $13.21
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    New Advantage Corporation IXTH10N100D2 119 1
    • 1 -
    • 10 -
    • 100 $29.45
    • 1000 $27.49
    • 10000 $27.49
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    IXYS Corporation IXTH10N100D

    MOSFETs 10 Amps 1000V 1.4 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI IXTH10N100D Tube 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $14.52
    • 10000 $14.52
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    IXTH10N100D Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH10N100D IXYS Three phase full bridge with Trench MOSFETs in DCB isolated high current package Original PDF
    IXTH10N100D IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 10A TO-247 Original PDF
    IXTH10N100D2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 1000V 10A TO-247 Original PDF

    IXTH10N100D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTT10N100D

    Abstract: 10N100 IXTH10N100D siemens relay rg DS99529A
    Text: Preliminary Technical Information IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B IXTT10N100D 10N100 IXTH10N100D siemens relay rg DS99529A

    IXTH10N100D2

    Abstract: No abstract text available
    Text: Advance Technical Information IXTH10N100D2 IXTT10N100D2 Depletion Mode MOSFETs VDSX ID on RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTH10N100D2 IXTT10N100D2 O-247 O-268 O-247) O-247 100ms 100ms 10N100D2

    Untitled

    Abstract: No abstract text available
    Text: IXTH10N100D IXTT10N100D High Voltage MOSFETs VDSX ID25 RDS on = = ≤ 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G S Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 1000 V VGSX


    Original
    PDF IXTH10N100D IXTT10N100D O-268 O-247) O-268 O-247 IXTT10N100D IXTH10N100D 100ms

    T10N100

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage MOSFETs VDSX ID25 IXTH10N100D IXTT10N100D = = ≤ RDS on 1000V 10A Ω 1.4Ω N-Channel, Depletion Mode TO-268 (IXTT) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTH10N100D IXTT10N100D O-268 100ms 10N100D 3-31-09-B T10N100

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information Depletion Mode MOSFETs VDSX ID on IXTH10N100D2 IXTT10N100D2 RDS(on) = > ≤ 1000V 10A 1.5Ω Ω N-Channel TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ


    Original
    PDF IXTH10N100D2 IXTT10N100D2 O-247 O-247) O-268 100ms 10N100D2

    IXTH20N50D

    Abstract: IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D
    Text: SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF NEW PRODUCT BRIEF Package outline Drawings Line Interface Example: Reduce high-line input voltage power dissipation versus a power resistor for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.


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    PDF IXI858/IXI859 00V/1000V O-247 O-268 O-251AA IXTH20N50D IXTP01N100D IXTP02N50D IXTY02N50D IXTY01N100D depletion mode mosfet IXTT10N100D IXTH10N100D IXTT20N50D IXTU01N100D