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IXYS Corporation CPC3701CTR MOSFETs N Channel FET 60V, 600mA
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TTI	CPC3701CTR	Reel	10,000		1,000	1 - 10 - 100 - 1000 $0.329 10000 $0.294	Buy Now
IXYS Corporation CPC3708ZTR MOSFETs N-Channel Depletion Mode FET
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TTI	CPC3708ZTR	Reel	10,000		1,000	1 - 10 - 100 - 1000 $0.39 10000 $0.338	Buy Now
IXYS Corporation CPC3982TTR MOSFETs N-Ch Depletion Mode Vertical DMOS FET
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TTI	CPC3982TTR	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.203	Buy Now
IXYS Corporation CPC3980ZTR MOSFETs N-Ch Depletion Mode Vertical DMOS FET
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TTI	CPC3980ZTR	Reel	5,000		1,000	1 - 10 - 100 - 1000 $0.398 10000 $0.358	Buy Now
IXYS Corporation CPC3902ZTR MOSFETs 250V N-Channel Depletion-Mode FET
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TTI	CPC3902ZTR	Reel	4,000		1,000	1 - 10 - 100 - 1000 $0.379 10000 $0.379	Buy Now

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DEPLETION Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DN2450 Abstract: Voltage to Current Converters marking L2 package SOT A0208 Text: Supertex inc. DN2450 N-Channel Depletion-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage	Original	PDF	DN2450 DSFP-DN2450 A020811 DN2450 Voltage to Current Converters marking L2 package SOT A0208
IGBT THEORY AND APPLICATIONS 400V Abstract: TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861 Text: Application Note AN-1086 BVCES Testing Considerations for Ultra-thin wafer B B Depletion Stop Trench IGBTs By Chiu Ng, Al Diy, Alberto Fernandez, Vijay Bolloju Table of Contents Page	Original	PDF	AN-1086 1628/D. IGBT THEORY AND APPLICATIONS 400V TEK 370A tesec IGBT THEORY AND APPLICATIONS bj transistor igbt high voltage pnp transistor 700v jfet curve tracer short circuit tracer schematic bipolar transistor tester AN10861
01N100D Abstract: high voltage mosfet n-channel Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C	Original	PDF	01N100D O-220AB high voltage mosfet n-channel
pseudomorphic HEMT Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564 Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm	Original	PDF	FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
FPD750SOT89 Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	PDF	FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
0603 footprint IPC Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky	Original	PDF	FPD3000SOT89 FPD3000SOT8 30dBm 45dBm FPD3000SOT89 25mx1500m FPD3000SOT89E: FPD3000SOT89CE-BD FPD3000SOT89CE-BE FPD3000SOT89CE-BG 0603 footprint IPC FPD3000 TRANSISTOR BC 157 FPD3000SOT89E
FPD1500 Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a	Original	PDF	FPD1500DFN FPD1500DFN mx750 27dBm 85GHz 42dBm 85GHz) EB1500DFN-BA FPD1500 SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Untitled Abstract: No abstract text available Text: TPS9103 POWER SUPPLY FOR GaAs POWER AMPLIFIERS SLVS131A - JULY 1996 Charge Pump Provides Negative Gate Bias for Depletion-Mode GaAs Power Amplifiers GATE_BIAS □ = 10 VCC C1c i+ BATTJN BATTJN BATTJN PGP PG GND 2 3 4 5 6 7 8 9 10 135-mli High-Side Switch Controls Supply	OCR Scan	PDF	TPS9103 SLVS131A 135-mli 20-Pln 10-ki2 TPS9103
d2020e Abstract: No abstract text available Text: SILICONIX INC 18E I Ô5S473S 0014053 fy S iG c o n ix JLm in c o rp o ra te d ND2020 SERIES "T-2.7-7. S N-Channel Depletion-Mode MOS Transistors TO-92 BOTTOM VIEW 1 SOURCE 2 GATE 3 DRAIN PRODUCT SUMMARY PART NUMBER 1 • V BR)DSV fDS(ON) (V) (« ) Id (A)	OCR Scan	PDF	5S473S ND2020 ND2020L ND2020E O-206AC VDDQ20 ND2020E. d2020e
DN2620 Abstract: No abstract text available Text: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology	OCR Scan	PDF	DN2620 DN2624 600mA 600mA DN2620N3 DN2624N3 DN2620ND DN2624ND 300mA, 300jxs
nd2410l Abstract: No abstract text available Text: ND2406L, ND2410L N-Channel Depletion-Mode MOS Transistors JBÜSKSS TO-92 TO-226AA PRODUCT SUMMARY T PART NUMBER V (BR)DSS ND2406L 240 6 0.23 ND2410L 240 10 0.18 BOTTOM VIEW >d (A) 1 SOURCE 2 GATE 3 DRAIN Performance Curves: VDDV24 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted)	OCR Scan	PDF	ND2406L, ND2410L O-226AA) ND2406L ND2410L VDDV24
d150n Abstract: No abstract text available Text: LND150 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Order Number / Package I dss BVdgx (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0m A LN D 150N 3 LN D 150N 8 LN D 150N D * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.	OCR Scan	PDF	LND150 O-243AA* OT-89. d150n
pj 809 Abstract: No abstract text available Text: Product Nomenclature and Ordering Information DMOS Proprietary Products RB HI-REL RB = MIL-STD-883 for Arrays SX = Similar to JANTX SXV = Similar to JANTXV FAMILY TYPE D = Vertical DepletionMode DMOS Discretes L = Lateral DMOS Discretes T = Low Threshold DMOS	OCR Scan	PDF	MIL-STD-883 LP0701) TN2501) O-236AB OT-23) O-252) T0-220 O-243AA OT-89) O-220 pj 809
Untitled Abstract: No abstract text available Text: Temic BF543 S e m i c o n d u c t o r s N-Channel MOS-Fieldeffect Triode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications High frequency stages up to 300 MHz. Features • Integrated gate protection diode •	OCR Scan	PDF	BF543 BF543 D-74025 11-Apr-97

GI 536 DIODES Abstract: No abstract text available Text: Temic S888T S e m i c o n d u c t o r s N-Channel Dual-Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input- and mixer stages in low voltage UHF- and VHFtuner with only 5 V supply voltage and in cordless phones.	OCR Scan	PDF	S888T S888T 09-Apr-97 GI 536 DIODES
ND2410L Abstract: No abstract text available Text: Ä1«ssslä VDDV SERIES DIE N-Channel Depletion-Mode MOS Transistors VDDV1CHP* VDDV2CHP* ND2406L ND2410L ‘ Meets or exceeds specification for all part numbers listed below G ate Pad 0-005 0.127 0 007 (0.178) M* «4 p« tl» c i U :R «fl:»iag f u t a _f« * « a « B * S	OCR Scan	PDF	ND2410L ND2406L VDDV24. ND2410L
Untitled Abstract: No abstract text available Text: Temic BF995 S e m i c o n d u c t o r s N-Channel-Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ Applications Input and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz.	OCR Scan	PDF	BF995 BF995 03-Mar-97
gl 1117 ax Abstract: BF994 Text: Tem ic BF994S S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode E lectrostatic sensitive device. O bserve precautions for handling. M Applications Input and m ixer stages especially for V H F TV-tuners. Features • Integrated gate protection diodes	OCR Scan	PDF	BF994S BF994S 03-Mar-97 gl 1117 ax BF994
N-Channel Depletion-Mode MOSFET high voltage Abstract: SOT-23 MARKING mn DW-200 NDE SOT23 MARKING Text: Supertex inc. LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVdsx/ R d S ON Id s s Order Number / Package Product marking for SOT-23: b v dgx (max) (min) TO-236AB* NDE* 500V 1.0KÌÌ 1.0mA LND250K1 where * = 2-week alpha date code ’ Sam e as SOT-23. All units shipped on 3,000 piece carrier tape reels.	OCR Scan	PDF	LND250 O-236AB* LND250K1 OT-23: OT-23. N-Channel Depletion-Mode MOSFET high voltage SOT-23 MARKING mn DW-200 NDE SOT23 MARKING
sst2100 Abstract: LPD-12 Text: SILICONIX INC IflE D • 0254735 ODIMGOI 1 ■ SD/SST2100 SERIES C T ’S ilic o n ix J J f in c o rp o ra te d N-Channel Depletion-M ode Lateral DMOS FETs - T The SD/SST2100 Series is a depletion-mode MOSFET which utilizes our lateral DMOS process to provide low capacitance, fast switching, and high	OCR Scan	PDF	SD/SST2100 OT-143 LPD-12 sst2100 LPD-12
S852T Abstract: BF579 T0-50 BF964S BF96 BFP183T Text: Tem ic Semiconduct ors Selector Guide Dual-Gate Si-MOSFETs N-Channel Depletion Mode Number BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T VD5 V 20 20 20 12 20 20 20 12 20 10 lümax mA 30 30 30 30 30 30 30 30 30 20 Iy2isl at Ids mA mS 15	OCR Scan	PDF	BF961 BF964S BF966S BF988 BF994S BF995 BF996S BF998 S525T S888T S852T BF579 T0-50 BF96 BFP183T
N-Channel Depletion-Mode MOSFET high voltage Abstract: pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt Text: S u p e r t e x inc. LND150 /jrfÌN N-Channel Depletion-Mode vHg/ MOSFET Ordering Information _ Order Num ber / Package BVdsx/ ^DS ON I dss BV dox (max) (min) TO-92 TO-243AA* Die 500V 1.0KQ 1.0mA LND150N3 LND150N8 LND150ND * Sam e a s SOT-89. Product shipped on 2000 piece carrie r tape reels.	OCR Scan	PDF	LND150 LND150N3 O-243AA* LND150N8 LND150ND OT-89. N-Channel Depletion-Mode MOSFET high voltage pc 817 A - mosfet gate drive mosfet to-92 n-channel 20 volt
Untitled Abstract: No abstract text available Text: DMCD N-Channel _ Depletion-Mode MOSFET in c o r p o r a te d DEVICE TYPE PACKAGE Single TO-72 TO-206AF • SD2100 Single Chip • Available as DMCD1CHP TYPICAL CHARACTERISTICS Depletion Mode - Drain Current & On-Reslstance vs. Gate-Source Cutoff Voltage	OCR Scan	PDF	O-206AF) SD2100 -----10V.
Untitled Abstract: No abstract text available Text: Supertax inc. DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdsx/ R d s o n b v dgx (max) (min) TO-92 Die 240V 4.0£2 600mA DN2624N3 DN2624ND •d s s Advanced DMOS Technology Features □ High input impedance	OCR Scan	PDF	DN2624 600mA DN2624N3 DN2624ND

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DEPLETION Price and Stock

IXYS Corporation CPC3701CTR

IXYS Corporation CPC3708ZTR

IXYS Corporation CPC3982TTR

IXYS Corporation CPC3980ZTR

IXYS Corporation CPC3902ZTR

DEPLETION Datasheets Context Search

DN2450

IGBT THEORY AND APPLICATIONS 400V

01N100D

pseudomorphic HEMT

FPD750SOT89

0603 footprint IPC

FPD1500

Untitled

d2020e

DN2620

nd2410l

d150n

pj 809

Untitled

GI 536 DIODES

ND2410L

Untitled

gl 1117 ax

N-Channel Depletion-Mode MOSFET high voltage

sst2100

S852T

N-Channel Depletion-Mode MOSFET high voltage

Untitled

Untitled