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    71B4M Price and Stock

    Grayhill Inc 38EWSP71B4M6RT

    SWITCH PUSH SPDT 0.4VA 20V
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    DigiKey 38EWSP71B4M6RT Bulk 100
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    Mouser Electronics 38EWSP71B4M6RT
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    Newark 38EWSP71B4M6RT Bulk 100
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    Sager 38EWSP71B4M6RT 100
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    Grayhill Inc 38EWDP71B4M7RT

    SWITCH PUSHBUTTON DPDT 0.4VA 20V
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    Mouser Electronics 38EWDP71B4M7RT
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    Grayhill Inc 38EWSP71B4M6GT

    Switch Push Button ON (ON) SPDT Round Plunger 1A 125VAC 28VDC Momentary Contact PC Pins Thru-Hole - Bulk (Alt: 38EWSP71B4M6GT)
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    Mouser Electronics 38EWSP71B4M6GT
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    Grayhill Inc 38EWSP71B4M7QT

    Sealed Snap Action Miniature Pushbutton Switch SPDT 1A 125VAC/28VDC Right Angle PC Mount Vertical Termination Thru-Hole Mount Bulk - Bulk (Alt: 38EWSP71B4M7QT)
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    Mouser Electronics 38EWSP71B4M7QT
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    Grayhill Inc 38EWSP71B4M7RT

    Switch Push Button ON (ON) SPDT Round Plunger 20VAC 20VDC 0.4VA Momentary Contact PC Pins Thru-Hole - Bulk (Alt: 38EWSP71B4M7RT)
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    Mouser Electronics 38EWSP71B4M7RT
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    71B4M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung KX

    Abstract: ha13
    Text: SA M S UN G E L E C T R O N I C S INC b7E D • 71b4m2 KM23C1Û01/1011 G □ □ 1 Ljc153 TÜfi ■ SMGK CMOS MASK ROM 1M-Bit (128KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072X 8 bit organization • Fast access time : 120ns(max). « Supply voltage : single+5V


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    PDF 71b4m2 KM23C1 128KX8) 120ns 28-pin, 600mil, 32-pin, 525mil, samsung KX ha13

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)


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    PDF 71b4m2 DD17Qbfl KM23V81 X8/512K 150ns 42-pin, 600mil, 44-pin, KM23V8100B

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D m 71b4m 2 KM23C8100FP2 DD1117S 5 HISN6K CMOS MASK ROM T ^ fc -lV lS 8M-BH 1M X 8 /5 12K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


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    PDF 71b4m KM23C8100FP2 DD1117S 150ns 64-pin 3fe414E 23C8100FP2)

    SRAM timing

    Abstract: No abstract text available
    Text: SAMSUNG E L E C TRONICS INC b7E J> • 7TbmN2 0Ü177M2 KM79C86 ISfi M S I I S K CMOS SRAM 3 2 K x9 Synchronous Burst Cache RAM with Self-Timed Write FEATURES GENERAL DESCRIPTION • Synchronous Operation The KM79C86 is a 294,912 bit S ynchronou s S tatic Ran­


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    PDF KM79C86 32Kx9 44-Pin 912xx/ KM79C86 7Tb4142 DD177S1 SRAM timing

    32Kx32 Synchronous

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V599A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • • • • • • • • • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst On-Chip Address Counter.


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    PDF KM732V599A/L 32Kx32 32Kx32 Synchronous

    Untitled

    Abstract: No abstract text available
    Text: KS7306 DIGITAL CAMERA PROCESSOR GENERAL DESCRIPTION KS7306 is a CCD digital signal processor. The electronic video signal that passed the color filter array CFA pattern of CCD is put to the process of dual correlation sampling and then converted to digital video signal by A/D converter.


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    PDF KS7306 KS7306 100-QFP-1414 25ZT1 03125Z VID-97-D004

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM732V596A/L 32Kx32 Synchronous SRAM 32K x 32 - Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • • • • • • • • The K M 732V596A/L is a 1,048,576-bit Synchronous S ta tic R andom A c c e s s M em ory d e sig ned fo r high


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    PDF KM732V596A/L 32Kx32 732V596A/L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: KS0122 Multimedia ELECTRONICS MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required clocks and video timing signals are


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    PDF KS0122 KS0122 GD33bD7 0033b0fl

    Untitled

    Abstract: No abstract text available
    Text: KM44V1004DT CMOS D R A M ELECTRONICS 1 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


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    PDF KM44V1004DT 1b4142

    D1377

    Abstract: TCA 965 BP KM424C256A
    Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)


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    PDF 0G13771 KM424C256A KM424C256A 256Kx4 28-PIN D1377 TCA 965 BP

    KS57C0108

    Abstract: GG45
    Text: K S 5 7 C 0 1 0 4 /0 1 0 8 4-Bit CMOS Microcontroller ELECTRONICS Data Sheet DESCRIPTION The KS57C0104/0108 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain I/O pins, the KS57C0104/0108


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    PDF KS57C0104/0108 KS57C0104) KS57C0108) 16-bit 0011B. 0000B. 71b4m KS57C0104/0108 KS57C0108 GG45

    tl527

    Abstract: 741i NCN30
    Text: Advance Information KM 29V64000T/R FLASH M EM O RY 8M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply The K M 29V 64000T /R is a 8 M 8 ,38 8 ,6 0 8 x8 bit N A N D • O rganization Plash m em ory w ith a sp a re 2 5 6 K (2 6 2 ,1 4 4 )x 8 bit.


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    PDF KM29V64000T/R 200us tl527 741i NCN30

    rb414

    Abstract: KM44C1003
    Text: KM44C1003DT CMOS DR A M ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a fam ily of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power


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    PDF KM44C HHHHHHI-INMHHM01 KM44C1003DT rb414 KM44C1003

    samsung p28

    Abstract: No abstract text available
    Text: K S O l 19 Multimedia ELECTRONICS VIDEO ENCODER The KS0119/KS0119Q2 combines NTSC encoding with conventional RAM-DAC functions so that digitized video or computer generated graphics can be displayed on either NTSC or PC monitors. There are two data input channels


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    PDF KS0119/KS0119Q2 KS0119Q2 KS0119. S0119) GD33521 D033522 samsung p28

    Untitled

    Abstract: No abstract text available
    Text: KM416V1000BT CMOS D R A M ELECTRONICS 1M x16B it CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM416V1000BT 1Mx16 1000BT) 7Tb4142 GG30b2b

    Untitled

    Abstract: No abstract text available
    Text: KM4 I C I 6000B S CMOS DRAM ELECTRONICS 16M x 1 Bit CMOS Dynamic HAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    PDF 6000B 16Mx1 KM41C16000BS 0G34Q05 71b4142 0034QGfc>

    KM48C2104A

    Abstract: No abstract text available
    Text: KM48C2104A/AL/ALL/ASL CMOS DRAM 2 M x 8 Bit CM OS Dynamic RAM with Extended Data Out FEATURES GENERAL DESCRIPTION • Performance range: tRAC tCAC tRC tHPC 13ns 90ns 20ns 24ns KM48C2104A/AL/ALL/ASL-5 50ns KM48C2104A/AIVALL/ASL-6 60ns 15ns 110ns KM48C2104A/AL/ALL/ASL-7


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    PDF KM48C2104A/AL/ALL/ASL KM48C2104A/AL/ALL/ASL-5 KM48C2104A/AIVALL/ASL-6 110ns KM48C2104A/AL/ALL/ASL-7 130ns KM48C2104A/AL/ALL/ASL-8 150ns KM48C2104A/AL/ALL/ASL 28-LEAD KM48C2104A

    Untitled

    Abstract: No abstract text available
    Text: KM48C2100BK CMOS D R A M ELECTRONICS 2 M x 8 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


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    PDF KM48C2100BK

    Untitled

    Abstract: No abstract text available
    Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM array consists of 512 bit rows of 8192 bits. It operates like a conventional 256K x 16 CMOS DRAM. The RAM port has a write per bit mask capability. Data may be written with New and Old Mask. The RAM port


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    PDF KM4216C/V256

    T2D 85 diode

    Abstract: T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54
    Text: IRLS510A Advanced Power MOSFET FEATURES BVDss = 100 V • Logic Level Gate Drive ■ Avalanche Rugged Technology ^DS on ■ Rugged Gate Oxide Technology lD = 4.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VOS = 100V


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    PDF IRLS510A O-220F 71b4m2 D3T23b T2D 85 diode T2D 65 DIODE T2D DIODE T2D 54 DIODE T2D 8 diode T2D DIODE 45 T2D 09 diode 23/ZENER DIODE t2d 54

    KM68257

    Abstract: a12g KM68257lp km68257P u 242 samsung KM68257LP-25 SRAM SAMSUNG
    Text: SAMSUNG SEMICONDUCTOR IN C 23E D • 7^ 4142 GÜDñSTb T ■ CMOS SRAM KM68257P/KM68257LP 32K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 35,45,55ns max. • Low Power Dissipation Standby (TTL) : 3 mA (max.) (CMOS): 100 pA (max.)


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    PDF KM68257P/KM68257LP 28-pin 600mil) KM68257 144-bit KM68257/KM68257L a12g KM68257lp km68257P u 242 samsung KM68257LP-25 SRAM SAMSUNG

    ic KA7812

    Abstract: sheet ka7812 DD35AL KA7810 ka7805 samsung KA7824 SAMSUNG IC. KA7812 Ka7805 diagram KA7810A WV KA7815
    Text: KA78XX ELECTRONICS Industria] 3-TERM INAL 1A POSITIVE VOLTAGE REGULATORS The KA78XX series of three-terminal positive regulators are available in the T 0-220 package and with several fixed output voltages, making them useful in a wide range of applications. Each type employs internal current


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    PDF KA78XX KA78XX 7Tb414a 0032flfl4 ic KA7812 sheet ka7812 DD35AL KA7810 ka7805 samsung KA7824 SAMSUNG IC. KA7812 Ka7805 diagram KA7810A WV KA7815

    KM416S4030AT

    Abstract: ZX-03 KM416S4030AT-G
    Text: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.


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    PDF KM416S4030AT 16Bitx KM416S4030A/KM416S4031A KM416S4030AT) KM416S4030AT ZX-03 KM416S4030AT-G

    IRFS351

    Abstract: 250M IRFS350
    Text: N-CHANNEL POWER MOSFETS IRFS350/351 FEATURES • Lower R d s <on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


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    PDF IRFS350/351 IRFS350 IRFS351 250M