Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
KM23V8105D
42-DIP-600
KM23V8105DG
44-SOP-600
42-DIP-600)
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
44-TSOP2-400
KM23V8100DET
KM23V8100DT
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KM23V8105D
Abstract: KM23V8105DG
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
KM23V8105D
42-DIP-600
KM23V8105DG
44-SOP-600
576nch)
KM23V8105DG
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KM23V8100D
Abstract: KM23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
KM23V8100DG
44-SOP-600
KM23V8100DG
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KM23V8105D
Abstract: KM23V8105DET KM23V8105DT TSOP-23-5
Text: KM23V8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
44-TSOP2-400
KM23V8105DET
KM23V8105DT
TSOP-23-5
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KM23V8105D
Abstract: KM23V8105DG
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/50ns
KM23V8105D
42-DIP-600
KM23V8105DG
44-SOP-600
576DIMENSIONS
KM23V8105DG
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Untitled
Abstract: No abstract text available
Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
44-TSOP2-400
44-TSOP2-400)
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Untitled
Abstract: No abstract text available
Text: KM23V8105D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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PDF
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
44-TSOP2-400
44-TSOP2-400)
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: KM23V8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
44-TSOP2-400
KM23V8100DET
KM23V8100DT
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KM23V8100D
Abstract: KM23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
/512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
KM23V8100DG
44-SOP-600
KM23V8100DG
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)
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KM23V81
/512Kx16)
100ns
120ns
KM23V8100D
44-TSQP2-400
KM23V8100DET
KM23V8100DT
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42-DIP-6Q0
Abstract: No abstract text available
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Swltchable organization 1,048,576 x 8(byta mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 1Q0ns(Max.) 3.0V operation: 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
/512Kx16)
120ns
KM23V8100D
42-DIP-6Q0
KM23V8100DG
44-SOP-BOO
KM23V81OODG
D8-D15C2)
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A18T
Abstract: 23V8100DG
Text: KM23V8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V
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KM23V8100D
512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
23V8100DG
44-SQ
P-600
23V8100D
A18T
23V8100DG
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tl 0741
Abstract: 3.3v 1Mx8 static ram high speed
Text: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES G ENER AL DESCRIPTIO N • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)
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KM23V81
512Kx16)
100ns
120ns
23V8100D
44-TSQ
P2-400
44-TSOP2-400)
tl 0741
3.3v 1Mx8 static ram high speed
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Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512KX16) CMOS MASK ROM FEATURES G E N E R A L D E S C R IP T IO N • Switehable organization 1,048,576 x 8(byte mode) 524,288 x 16(worcl mode) • Random access time/Page Access Time 3.3V Operation: 100/3Qns(Max.)
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OCR Scan
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KM23V8105D
/512KX16)
100/3Qns
12Q/5Qns
KM23V8105D:
42-DIP-600
KM23V8105DG:
44-SQP-600
KM23V810SD
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)
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OCR Scan
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KM23V81
/512Kx16)
100ns
120ns
23V8100D
44-TSQP2-400
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Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access tim e/Page Access Tim e 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.)
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OCR Scan
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KM23V8105D
512Kx16)
100/30ns
120/50ns
KM23V8105D
42-DIP-600
23V8105DG
44-SQ
P-600
23V8105D
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Untitled
Abstract: No abstract text available
Text: KM23V8100P E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEA TU R ES G EN ERA L DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation: 100ns(Max.) 3.0V operation: 120ns(Max.)
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OCR Scan
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PDF
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KM23V8100P
/512Kx16)
100ns
120ns
KM23V81
44-TSQP2-400
KM23V8100D
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b?E » • 71b4m2 DD17Qbfl OSfl ■ PRELIMINARY KM23V81 OOB G CMOS MASK ROM 8M-Bit (1M X8/512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode)
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71b4m2
DD17Qbfl
KM23V81
X8/512K
150ns
42-pin,
600mil,
44-pin,
KM23V8100B
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Untitled
Abstract: No abstract text available
Text: CMOS MASK ROM KM23V81 OOD G 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 3.3V operation : 100ns(M ax.) 3.0V operation : 120ns(Max.)
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OCR Scan
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PDF
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KM23V81
/512Kx16)
100ns
120ns
KM23V8100D
42-DIP-600
23V8100DG
44-SQ
P-600
23V8100DG
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Untitled
Abstract: No abstract text available
Text: KM23V8100C G/T ELECTRONICS CMOS Mask ROM 8M-Bit (1M X 8/512 K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) ■Supply voltage : single +3.3V
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KM23V8100C
150ns
23V8100C
42-DIP-600
23V8100CG
44-SO
P-600
23V8100CT
44-TSQ
P2-400
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8100B 42 pin
Abstract: No abstract text available
Text: PRELIMINARY CMOS MASK ROM KM23V81 OOB G 8M-Bit (1M X8I512K x 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) • Supply voltage : single+3V or +3.3V
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OCR Scan
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KM23V81
X8I512K
150ns
50juA
42-pin,
600mil,
44-pin,
KM23V8100B
8100B 42 pin
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Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access tim e/Page Access Tim e 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/50ns(Max.)
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OCR Scan
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PDF
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KM23V8105D
/512Kx16)
100/30ns
120/50ns
KM23V8105D
42-DIP-600
23V8105DG
44-SQ
P-600
23V8105D
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73SA
Abstract: 576X8 ttl 74142
Text: KM23V8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512K x 16 M-ROM(Extended Temperature Product) GENERAL DESCRIPTION • Switchable organization 1,048,576x8 (byte mode) 524,288 x 16(word mode) • Fast access time : 150ns(max.) • Supply voltage : single +3.3V
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OCR Scan
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KM23V8100CET
8/512K
576x8
150ns
KM23V8100CET
44-TSQP2-400
576x8bit
288x16bit
KM23V8100CEG)
73SA
576X8
ttl 74142
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