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    TURCK Inc VB2-FSM 4.4/2FKM 4.4/CS10777

    Vb2 |Turck VB2-FSM 4.4/2FKM 4.4/CS10777
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    Newark VB2-FSM 4.4/2FKM 4.4/CS10777 Bulk 1
    • 1 $47.74
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    TURCK Inc VB2-RS 4.4T-0.2/2FKM 4.4/CS107

    Vb2 |Turck VB2-RS 4.4T-0.2/2FKM 4.4/CS107
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    Newark VB2-RS 4.4T-0.2/2FKM 4.4/CS107 Bulk 1
    • 1 $64.69
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    Samsung Semiconductor KM44C4100CK-6

    DRAM - 16MBit (4M x 4) - 5V - 24-Pin SOJ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com KM44C4100CK-6 706
    • 1 $19.84
    • 10 $11.32
    • 100 $5.28
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    Samsung Semiconductor KM44C256AP-10

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    Bristol Electronics KM44C256AP-10 5,662
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    Samsung Semiconductor KM44C1003CJ-7TM

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    Bristol Electronics KM44C1003CJ-7TM 2,000
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    KM44C Datasheets (322)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44C1000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM44C1000A-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000A-10 Samsung Electronics 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM44C1000A-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000A-7 Samsung Electronics 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM44C1000A-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000A-8 Samsung Electronics 1M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM44C1000AL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000AL-10 Samsung Electronics 1M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C1000AL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000AL-7 Samsung Electronics 1M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C1000AL-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000AL-8 Samsung Electronics 1M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C1000ASL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000ASL-10 Samsung Electronics 1M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C1000ASL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000ASL-7 Samsung Electronics 1M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C1000ASL-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM44C1000ASL-8 Samsung Electronics 1M x 4 Bit CMOS DRAM with Fast Page Mode Scan PDF
    KM44C1000B-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    ...

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    Catalog Datasheet MFG & Type PDF Document Tags

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original
    PDF 256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260

    Untitled

    Abstract: No abstract text available
    Text: KM44C1004C, KM44V1004C CMOS DRAM 1M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access


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    PDF KM44C1004C, KM44V1004C 7TbM14E

    DG34B

    Abstract: No abstract text available
    Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4 KM44C4104BS D034b64 DG34B

    KM44C1003C

    Abstract: km44c1003cj 71411-4
    Text: KM44C1003C CMOS DRAM 1 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION T his is a fa m ily of 1,048,576 x 4 bit Fast Page M ode Q uad C A S C M O S DRAM s. Fast P age M ode offers high s p e e d random access of m em ory ce lls w ithin the sam e row. A cce ss tim e -5 , -6, -7 o r -8 , p o w e r


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    PDF KM44C1003C KM44C1003C km44c1003cj 71411-4

    taa 723

    Abstract: A0-A10J-1 A10C A10EC
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss


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    PDF KM44C4002A, KM44C4102A taa 723 A0-A10J-1 A10C A10EC

    KM44C4004B

    Abstract: No abstract text available
    Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4004B KM44C4004BS 0034S12

    Untitled

    Abstract: No abstract text available
    Text: KM44C 1 003 DJ CMOS D R AM ELECTRONICS 1M x 4 Bit CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , powér


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    PDF KM44C KM44C1003DJ G03416B 00341f

    KM44C1003c

    Abstract: No abstract text available
    Text: KM44C1003C CMOS DRAM 1 Mx 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 1,048,576 x 4 bit Fast Page Mode Quad CAS CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 , power


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    PDF KM44C1003C KM44C1003c

    Untitled

    Abstract: No abstract text available
    Text: KM44C4102A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION T h e S am su ng K M 4 4 C 4 1 0 2 A /A L /A L L /A S L is a high • Performance range: K M 44C 4102A /A L/A LL/A S L-5 tRAC tCAC tac 50ns 13ns


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    PDF KM44C4102A/AL/ALL/ASL 110ns 150ns 130ns 24-LEAD 300MIL, 400MIL)

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


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    PDF KM44C1000ASL 130ns 10OOASL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • TTbMlMB 001325^ aflfl ■ S M G K KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C1OOOAL is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory.


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    PDF KM44C1000AL KM44C1OOOAL 130ns OOOAL-10 180ns 20-LEAD

    QAC22

    Abstract: ez 948 ic
    Text: SAM S UN G E L E C T R O N I C S INC b?E D 7 T b 4 1 H E D O l b SS l VbT • SMûK ■ KM44C4002 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • The Samsung KM44C4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 x 4 D ynam ic Random A ccess Memory. Its


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    PDF KM44C4002 KM44C4002 KM44C4002-7 KM44C4002-8 KM44C4002-6 24-LEAD QAC22 ez 948 ic

    Untitled

    Abstract: No abstract text available
    Text: KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the sam e row. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K Ref.), access time (-5 or -6), power consum ption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this fam ily have CAS-beforeRAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.


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    PDF KM44C4000C, KM44C4100C KM44V4000C, KM44V4100C 4V4000C,

    Untitled

    Abstract: No abstract text available
    Text: KM44C4003BS CMOS DRAM ELECTRONICS 4 M x 4 B i t CMOS Quad CAS DRAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Fast Page Mode DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 2K Ref. or 4K Ref. , access time


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    PDF KM44C4003BS D344bfl

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b?E ]> Bi 7 c3 b m M 5 KM44C4102 001b2tia Tb2 CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung KM44C4102 is a high speed CMOS 4 ,194,304x4 Dynamic Random Access Memory. Its


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    PDF KM44C4102 001b2tia KM44C4102 304x4 KM44C4102-7 130ns KM44C4102-8 150ns KM44C4102-6

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E » • 7^4142 0 D 1 S 47 7 = 4T CMOS DRAM KM44C256CL 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM44C256CL is a CMOS high speed 262,144 x 4 D ynam ic Random A ccess M em ory. Its


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    PDF KM44C256CL 256Kx4 KM44C256CL KM44C256C 110ns KM44C256CL-7 130ns KM44C256CL-8 150ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C268C CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Static Column Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C268C is a high speed CMOS 2 6 2 ,1 4 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C268C KM44C268C 110ns KM44C268C-7 130ns KM44C268C-8 150ns KM44C268C-6 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM44C1010A CMOS DRAM 1 M X 4 Bit C M O S Dynamic R A M with Fast Page M ode Write Per Bit M ode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C K M 4 4 C 1 0 1 0A- 7 70 ns 20 n s 13 0 n s K M 4 4 C 1 0 1 0A- 8 80ns 20 ns


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    PDF KM44C1010A 100ns cycles/16m

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C4100L 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4100L is a CMOS high speed 4,194,304 x 4 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


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    PDF KM44C4100L KM44C4100L 110ns KM44C4100L-7 130ns KM44C4100L-8 KM44C4100L-6 150ns 47/iF

    Untitled

    Abstract: No abstract text available
    Text: KM44C401OA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C401OA/AL/ALL/ASL is a high speed CMOS 4,194,304 b it x 4 Dynamic Random Access Memory. Its design is optim ized for high


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    PDF KM44C401OA/AL/ALL/ASL KM44C401OA/AL/ALL/ASL KM44C401OA/AL/ALL/ASL-5 KM44C401OA/AL/ALL/ASL-6 110ns KM44C401OA/AL/ALL/ASL-7 130ns KM44C401OA/AL/ALL/ASL-8 150ns 300MIL)

    Untitled

    Abstract: No abstract text available
    Text: KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C CMOS DRAM 4M x 4Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily of 4 .1 9 4 ,3 0 4 x 4 bit E xte n d e d D a ta O u t C M O S D R A M s. E xte n d e d D a ta O u t M ode o ffe rs high sp e e d ran d o m a c c e s s of


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    PDF KM44C4004C, KM44C4104C KM44V4004C, KM44V4104C sh04C 300mil

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


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    PDF KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD

    KM44C1000

    Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
    Text: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de­


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    PDF KM44C1000B KM44C1000B 110ns KM44C1000B-7 130ns KM44C1000B-8 150ns KM44C1000B-6 20-LEAD KM44C1000 km44c1000bj KM44C1000BJ6 KM44C1000BP-7

    44C4000

    Abstract: KM44C4000
    Text: KM44C4000 CMOS DRAM 4 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 44C 4000 is a high speed CMOS 4 ,1 9 4 ,3 0 4 X 4 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    PDF KM44C4000 44C4000-6 110ns 44C4000-7 130ns 150ns 24-LEAD 44C4000 KM44C4000