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    2N6059 Price and Stock

    STMicroelectronics 2N6059

    TRANS NPN DARL 100V 12A TO3
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    Microchip Technology Inc 2N6059

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc JAN2N6059

    TRANS NPN DARL 100V 12A TO204AA
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    Microchip Technology Inc JANTX2N6059

    TRANS NPN DARL 100V 12A TO204AA
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    Microchip Technology Inc JANTXV2N6059

    TRANS NPN DARL 100V 12A TO3
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    2N6059 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6059 Comset Semiconductors Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 Microsemi NPN Darlington Power Silicon Transistor Original PDF
    2N6059 Motorola Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 On Semiconductor TRANS DARLINGTON NPN 100V 12A 3TO-204AA - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 On Semiconductor DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 STMicroelectronics TRANS DARLINGTON NPN 100V 12A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 STMicroelectronics SILICON NPN POWER DARLINGTON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6059 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6059 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6059 Central Semiconductor Darlington Bipolar Transistor, NPN, 100V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6059 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6059 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6059 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6059 General Electric 12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6059 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6059 Mospec POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6059 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6059 Motorola European Master Selection Guide 1986 Scan PDF
    2N6059 Motorola Power Transistor Selection Guide Scan PDF

    2N6059 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6058

    Abstract: 2N6059
    Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear


    Original     		PDF 2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		PDF 2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052

    2N6292

    Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


    Original     		PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111

    Untitled

    Abstract: No abstract text available
    Text: 2N6059+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750


    Original     		PDF 2N6059

    2N6059

    Abstract: No abstract text available
    Text: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r s ( P t c e t u e d l o o r s P b


    Original     		PDF 2N6059 2N6059

    2N6059

    Abstract: 2n6059 03 transistor 1547 b
    Text: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ ■ STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL


    Original     		PDF 2N6059 2N6059 2n6059 03 transistor 1547 b

    2n6059

    Abstract: 100 amp darlington transistors 2N6058 2n6052
    Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA


    Original     		PDF 2N6052* 2N6058 2N6052, 2N6059 2N6059* 100 amp darlington transistors 2n6052

    2N6059 JANTXV

    Abstract: 2N6059
    Text: 2N6059 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6059 O204AA) 31-Jul-02 2N6059 JANTXV 2N6059

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —


    Original     		PDF 2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA

    2N6058

    Abstract: 2N6059 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear


    Original     		PDF 2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884

    Untitled

    Abstract: No abstract text available
    Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage


    Original     		PDF 2N6059 O-204AA)

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


    Original     		PDF 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI

    Untitled

    Abstract: No abstract text available
    Text: 2N6059+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750


    Original     		PDF 2N6059

    2N 6058

    Abstract: No abstract text available
    Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


    OCR Scan     		PDF 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    2N6052

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


    OCR Scan     		PDF 2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency


    OCR Scan     		PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058

    Untitled

    Abstract: No abstract text available
    Text: 2N6059 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 12 A Vce 1OO V Pd is s 15O W @ Te " 25 0C Tj -65 0C to &2OO 0C Ts t g -65 0C to &2OO 0C


    OCR Scan     		PDF 2N6059

    Untitled

    Abstract: No abstract text available
    Text: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL


    OCR Scan     		PDF 2N6059 2N6059

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    2N6050

    Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
    Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.


    OCR Scan     		PDF 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6050

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


    OCR Scan     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050