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    Zetex / Diodes Inc ZTX650

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    ZET ZTX650M1TC

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    ComSIT USA ZTX650M1TC 2,700
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    ZTX650 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZTX650 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    ZTX650 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original PDF
    ZTX650 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZTX650 Ferranti Semiconductors Super E-Line Transistors 1982 Scan PDF
    ZTX650 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    ZTX650 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZTX650 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ZTX650 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZTX650K Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650K Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650L Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650L Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650M Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650M Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650S Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650S Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX650(Z) Diodes NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF

    ZTX650 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ztx651

    Abstract: ZTX650 ztx651 equivalent ztx650 equivalent ZTX651-NPN transistor equivalent ZTX651 DSA003771
    Text: ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo 30 IC=100mA, VCE=5V f=100MHz IC=500mA, VCC=10V IB1=IB2=50mA


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    PDF ZTX650 ZTX651 100mA, 100MHz 500mA, ztx651 ZTX650 ztx651 equivalent ztx650 equivalent ZTX651-NPN transistor equivalent ZTX651 DSA003771

    smoke detector circuit using OP-AMP

    Abstract: ZTX650 ZTX690B DN-12 BSS138 Ionising J-FET TRANSISTOR ztx650 equivalent ZTX750 ZTX790A
    Text: Design Note 11 Issue 2 June 1995 Low Noise Audio Input Stage Design Note 12 Issue 2 June 1995 Ionising Smoke Detector +V 22M 10M R3 Vcc Sounder CMOS Gate Input Zs = 1 to 2R (typ) BSS138 R1 R2 Output Ionisation Chamber NPN - ZTX650 or ZTX690B Series PNP - ZTX750 or ZTX790A Series


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    PDF BSS138 ZTX650 ZTX690B ZTX750 ZTX790A BSS138 DN12-1 smoke detector circuit using OP-AMP DN-12 Ionising J-FET TRANSISTOR ztx650 equivalent

    BY206

    Abstract: inverter schematic BY206 diode 12v inverter circuit inverter 12v inverter circuit design schematic FX3437 simple inverter schematic circuit frequency inverter schematic Power INVERTER schematic circuit
    Text: Design Note 28 Issue 2 January 1996 6W Inverter for MOS Logic supplies The inverter is a simple push-pull circuit which takes advantage of the high curre nt handling capability of the ZTX650 range. It oscillates at a frequency of approximately 25kHz to allow it to use a very small transformer


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    PDF ZTX650 25kHz 150mV FX3437 29swg. 26swg. 13-6-0-6-13t, 250mA BY206 inverter schematic BY206 diode 12v inverter circuit inverter 12v inverter circuit design schematic simple inverter schematic circuit frequency inverter schematic Power INVERTER schematic circuit

    ZTX651

    Abstract: ztx650
    Text: ZTX650 Not Recommended for New Design Please Use ZTX651 ZTX650 ZTX651 PARAMETER ZTX650 SYMBOL MIN. TYP. 140 ZTX651 MAX. MIN. TYP. 175 140 UNIT CONDITIONS. MAX. 175 MHz Transition Frequency fT Switching Times ton 45 45 ns toff 800 800 ns 30 Output Capacitance Cobo


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    PDF ZTX650 ZTX651 ZTX651 IC/10 100ms ZTX650/51-5

    Untitled

    Abstract: No abstract text available
    Text: ZTX650 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45è V(BR)CBO (V)60 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0’ Maximum Operating Temp (øC) I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


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    PDF ZTX650 Freq140M StyleTO-92 Code3-12

    induction cooker fault finding diagrams

    Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
    Text: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120


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    PDF 03front induction cooker fault finding diagrams enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer

    MRF212

    Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413


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    PDF OT-161 92var StR-10 OT-123var O-220 MRF212 b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603

    flash trigger transformer

    Abstract: xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor
    Text: Design Note 25 Issue 2 October 1995 Flash Gun Inverter Using Super E-Line Bipolar Transistors RM 6 CORES 0.15mm GAP D3 BY206GP 10 R1 390 128 23 NEON C1 6V 100uF 10V R2 68 ZTX 300 T2 C3 750uF 350V ZTX 650 TR1 TR2 R4 1M D2 1N4148 0.1uF D1 R3 1N4148 680K R5 3M


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    PDF BY206GP 100uF 750uF 1N4148 flash trigger transformer xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor

    ZTX650

    Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
    Text: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts


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    PDF ZTX650 ZTX651 ZTX652 ZTX653 100ms FERRANTI SE60 transistor a7n ZTX653 Scans-00107861

    BC337B

    Abstract: m 60 n 03 g10 BC327C
    Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA


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    PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C

    BO 241 A

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR M EDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSU E 2 - J U L Y 94_ FEATURES * 60 Volt V CE0 * 2 Am p continuous current * Low saturation voltage * Ptot= l Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS.


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    PDF ZTX650 ZTX651 cH7Q57Ã 001G35S BO 241 A

    ZTX650

    Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
    Text: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages


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    PDF ZTX650 ZTX651 ZTX652 ZTX653 100ms 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862

    ZTX650

    Abstract: ztx651
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX650 ZTX651 ISSUE 2 -JU L Y 94_ FEATURES * 60 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * r ,o t = 1 W a t t ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage


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    PDF ZTX650 ZTX651 ZTX651

    BC337B

    Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
    Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A


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    PDF ZTX653 ZTX453 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 MPSA05 ZTX650 BC337B BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751

    ZTX753

    Abstract: ZTX750 ZTX650 ZTX752 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74 ZTX751
    Text: * FERRANTI semiconductors ZTX750 ZTX751 ZTX752 ZTX753 PNP Silicon Planar M e d i u m P o w e r Transistors FEATURES • 1.5W Pow er dissipation at T amb = 2 5 *C t • 2A con tin uous lc • Excellent gain characteristics to 2A • H igh V C E0 : up to 100 volts


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    PDF ZTX750 ZTX751 ZTX752 ZTX753 100mA 100ms ZTX753 ZTX650 6.8j 100v Scans-00107864 c6011 Ferranti Semiconductors SE74

    ZTX751

    Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.


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    PDF ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 ZTX652 ZTX552 ZTX452 MPSA56 MPSA06 ZTX751 ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06

    BC338C

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    BC337b

    Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
    Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    PDF 2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    ztx653

    Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
    Text: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages


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    PDF ZTX651 ZTX652 ZTX653 ZTX650 SE131 ztx653 2TX650 SE 130

    BC338C

    Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.


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    PDF ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 MPSA55 ZTX750 ZTX550 BC327A BC327B BC338C ZTX452 MPSA06 MPSA56 ZTX651 ZTX652

    bc177

    Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
    Text: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE


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    PDF ZTX552 ZTX452 MPSA56 MPSA06 BC556P BC546P ZTX551 ZTX451 BFS98 MPSA55 bc177 BFS59 ZTX452 BC546P BFS61 MPSA06 ZTX451

    ZTX651

    Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
    Text: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.


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    PDF ZTX6535 ZTX753 ZTX652 ZTX752 ZTX651Â ZTX751 ZTX650 ZTX750 ZTX6495 ZTX749 ZTX651 ZTX692B ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92