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    2N2102 Price and Stock

    Central Semiconductor Corp 2N2102-PBFREE

    TRANS NPN 65V 1A TO39
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    Microchip Technology Inc 2N2102

    TRANS PNP 65V 1A TO5
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    STMicroelectronics 2N2102

    TRANS NPN 65V 1A TO39
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    Rochester Electronics LLC 2N2102

    TRANS PNP 65V 1A TO5
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    Microchip Technology Inc 2N2102A

    TRANS PNP 65V 1A TO5
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    2N2102 Datasheets (94)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2102 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N2102 STMicroelectronics GENERAL PURPOSE AMPLIFIER AND SWITCH - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 Original PDF
    2N2102 STMicroelectronics Epitaxial Planar NPN Original PDF
    2N2102 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N2102 API Electronics Short form transistor data Short Form PDF
    2N2102 Boca Semiconductor AMPLIFIER TRANSISTOR NPN SILICON - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 Scan PDF
    2N2102 Central Semiconductor NPN- METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2102 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 Scan PDF
    2N2102 Central Semiconductor NPN Metal Can Switching and General Purpose Transistors Scan PDF
    2N2102 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N2102 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N2102 Diode Transistor SMALL SIGNAL TRANSISTORS Scan PDF
    2N2102 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N2102 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N2102 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    2N2102 General Electric Medium power silicon N-P-N planar transistor. - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 Scan PDF
    2N2102 General Transistor Small Signal Transistor Selection Guide Scan PDF
    2N2102 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N2102 Micro Electronics SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES - Pol=NPN / Pkg=TO39 / Vceo=65 / Ic=1 / Hfe=35min / fT(Hz)=60M / Pwr(W)=1 Scan PDF
    2N2102 Micro Electronics Semiconductor Devices Scan PDF

    2N2102 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3560M

    Abstract: No abstract text available
    Text: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2102 O205AD) 10/10m 19-Jun-02 3560M

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package A MEDIUM POWER DEVICE FOR USE IN AMPLIFIER AND HIGH SPEED NON SATURATING SWITCHES APPLICATION


    Original     		PDF 2N2102 C-120 2N2102Rev160102D

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Ω Collector Emitter Voltage, RBE < 10Ω


    Original     		PDF 2N2102 C-120 2N2102Rev 040904E

    2N2102 transistor datasheet

    Abstract: 2N2102 P008B
    Text: 2N2102 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signal and medium power applications in military and industrial equipments.


    Original     		PDF 2N2102 2N2102 2N2102 transistor datasheet P008B

    Untitled

    Abstract: No abstract text available
    Text: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2102 O205AD) 10/10m 17-Jul-02

    RCA 40409

    Abstract: rca1a18
    Text: High-Speed-Switching n-p-n and p-n-p Type Selection Charts h V CEO sus V CER <sus) V V C E V F E * » at V (sus) = 10 V Current—mA V V C E ICBO - M A Temp.-°C 0.01 10 50 V 150 1000 500 2N2102 FAMILY (n-p-n) General Purpose, Complementary to 2N4036 Family


    Original     		PDF 2N2102 2N4036 O-39/TO-205MD 2N697 2N1613 2N1711 2N3053 2N2270 2N699 2N3053A RCA 40409 rca1a18

    2N2102 datasheet

    Abstract: 2N2102
    Text: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF 2N2102 O205AD) 10/10m 1-Aug-02 2N2102 datasheet 2N2102

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    2N2102

    Abstract: P008B
    Text: 2N2102 EPITAXIAL PLANAR NPN • GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and


    Original     		PDF 2N2102 2N2102 P008B

    2n3053A complementary

    Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
    Text: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697


    OCR Scan     		PDF a00S72b 2N2102 2N4036 120MHz 2N697 2N1613 2N3053 2N2270 T0205AD/ 2N3053A 2n3053A complementary 40362 BUX40A 40319 2n4314 2N1893

    40409

    Abstract: 40361 40317 40314 40323 2n2102 2n697a 40311 40407 40814
    Text: 2N2102 FA M ILY [n-p-n] silicon f r = 120 MHz min; Py = 5 W max V R E (s a t)- V V p p (ia t)- V DESCRIPTION V C E O (sus) 2N TYPES V V V Tem p. -°c Curren t- m A V C E R<»U*) V C E V (sus) 0.01 0.1 10 50 150 - - - 'c 'C B •c 'b mA mA 1.5 150 15 1.3


    OCR Scan     		PDF 2N2102 2N697 2N699 2N1613 2N1711 2N1893 2N3053 2N2102 40409 40361 40317 40314 40323 2n697a 40311 40407 40814

    2N6178

    Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322

    2N2243

    Abstract: 2n2405
    Text: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B


    OCR Scan     		PDF 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N2243 2n2405

    2N2992

    Abstract: 23028 2N3016 JANTX2N3440
    Text: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S


    OCR Scan     		PDF

    2N2102A

    Abstract: No abstract text available
    Text: TYPES 2N2102, 2N2102A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 4 6 , M A R C H 1 9 7 3 FO R M ED IU M -PO W ER , G E N E R A L PU R PO SE A P P L IC A T IO N S • High Breakdown Voltage Combined with Low Saturation Voltage • hFE • ■ ■ Guaranteed from 10 m A to 1 A


    OCR Scan     		PDF 2N2102, 2N2102A

    N2219

    Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
    Text: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039


    OCR Scan     		PDF 133ia? 00Q13 2N1937 2N1991 2N2060 5/10m 2N2102 35min 10/10m 2N2192 N2219 2N2453 2N2243 Hirel 2N2192A

    2N6178

    Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6178 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102

    2N6180

    Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 2N6180 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178

    2N2102

    Abstract: 2n1613 replacement rca 2n2102 2n2102 replacement RCA-2N2102 2N1613 iz667
    Text: SOLID STATE High Speed Power Transistors 01 DE i3f l75Döl 0017007 , | ~r '' Z 7 '~r? , 2N1613, 2N2102 - File Num ber Medium-Power Silicon N-P-N Planar Transistors 106 TE R M IN A L D E SIG N A TIO N S For Sm all-Signal Applications in Industrial and Comm ercial Equipment


    OCR Scan     		PDF 2N1613, 2N2102 2N2102 O-20SAD RCA-2N1613 ii193rj 2N2102. 50fll 2n1613 replacement rca 2n2102 2n2102 replacement RCA-2N2102 2N1613 iz667

    RCA-2N2102

    Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
    Text: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications


    OCR Scan     		PDF 2N1613, 2N2102 2N2102 RCA-2N1613 92CS-- HI92R3 2N1613. 2N2102. RCA-2N2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457

    2N2102A

    Abstract: No abstract text available
    Text: Maximum Ratings Type NPN VcE^Sat @ l c / l b H r e @ *C V CB Volts V CE Volts V EB Volts Cob Min/Max mA Volts mA/mA MHz Min Case pF Max Geometry & Character­ ization Applicable Letter 1000 120 65 7 40/120 150 0.5 150/15 60 15 TO-5 A 2N2102A 1000 120 65 7


    OCR Scan     		PDF 2N2102A 2N2192A 2192B 2N2193A 2193B 2N2194A 2194B 2N2195A 2195B 2N2243A

    RCA 40250

    Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 RCA 40250 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA

    40375

    Abstract: 40327 40363 2N5323 2N3265 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320
    Text: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037


    OCR Scan     		PDF ITO-391 Pt-85-117 80-12SW 30x30 42x42 103x103 40375 40327 40363 2N5323 2N3265 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320

    2n2102

    Abstract: 2N1613 HARRIS 286
    Text: Power Transistors File Number 106 HARRIS SEMICOND SECTOR 2N1613, 2N2102 27E D 4302271 001*1775 5 « H A S ^ M ed ium -P ow er Silicon N -P -N Planar Transistors 3 3 - 5 TERMINAL DESIGNATIONS For S m a ll-S ig n a l A p p lic a tio n s In In d u strial and C o m m e rc ia l E q u ip m e n t


    OCR Scan     		PDF 2N1613, 2N2102 2N2102 O-205AD 2N1613 9ZCS-IH92R1 92CS-IU91H3 2N1613. HARRIS 286