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    Brady Worldwide Inc MXU1000

    (GP) MXU1000 PAD,15"X19", LGT, 1
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    DigiKey MXU1000 Bulk 1
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    Newark MXU1000 Bulk 1
    • 1 $69.99
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    RS MXU1000 Box 1
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    TestEquity LLC MXU1000
    • 1 $69.99
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    Belden Inc 9907-E4XU1000

    CABLE THINNET RG-58 20AWG 1000'
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    DigiKey 9907-E4XU1000 1,000
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    Belden Inc 2221-G7XU1000

    1 PR #26 FHDPE BRD PVC
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    DigiKey 2221-G7XU1000
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    Belden Inc 1800B-T5XU1000

    #24 FHDPE FS PR PVC
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    DigiKey 1800B-T5XU1000 1,000
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    Belden Inc 1800F-G7XU1000

    #24 PR FHDPE BRD PVC
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    DigiKey 1800F-G7XU1000 1,000
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    XU1000 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XU1000 Mimix Broadband 17.0-27.0 GHz GaAs MMIC Transmitter Original PDF
    XU1000 Mimix Broadband 17.0-27.0 GHz GaAs MMIC Up-Converter Original PDF

    XU1000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P1000 diode

    Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain


    Original
    PDF P1000 05-May-05 MIL-STD-883 P1000 diode diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000

    U1000

    Abstract: XB1004 XU1000
    Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000 May 2005 - Rev 13-May-05 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing


    Original
    PDF U1000 13-May-05 MIL-STD-883 U1000 XB1004 XU1000

    B1000

    Abstract: Mimix xb1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF 10-May-03 B1000 MIL-STD-883 Mimix xb1000

    74613

    Abstract: B1004-BD TS3332LD XB1004-BD 96330
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias


    Original
    PDF B1004-BD 12-Jun-07 MIL-STD-883 XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1 XB1004 74613 B1004-BD TS3332LD XB1004-BD 96330

    B1004-BD

    Abstract: TS3332LD XB1004-BD
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias


    Original
    PDF B1004-BD 12-Jun-07 MIL-STD-883 XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1 XB1004 B1004-BD TS3332LD XB1004-BD

    B1000

    Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF

    B1001

    Abstract: XB1001 XP1000 XU1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF B1001 10-May-03 MIL-STD-883 B1001 XB1001 XP1000 XU1000

    XB1001

    Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias


    Original
    PDF B1004 01-Apr-05 MIL-STD-883

    52521

    Abstract: 74613 78304 B1004 XB1001 XB1004 XP1000 XU1000
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 March 2005 - Rev 15-Mar-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias


    Original
    PDF B1004 15-Mar-05 XB1001 MIL-STD-883 52521 74613 78304 B1004 XB1004 XP1000 XU1000

    P1000 diode

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000-BD May 2007 - Rev 02-May-07 Features High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3


    Original
    PDF 02-May-07 P1000-BD MIL-STD-883 P1000 XP1000-BD-000V XP1000-BD-000W XP1000-BD-EV1 XP1000 P1000 diode

    diode p1000

    Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector


    Original
    PDF P1000 01-May-02 MIL-STD-883 diode p1000 P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram

    XB1004-BD

    Abstract: No abstract text available
    Text: 17.0-27.0 GHz GaAs MMIC Transmitter U1000-BD May 2007 - Rev 02-May-07 Features Chip Device Layout Fundamental Transmitter Low DC Power Consumption Optional Power Bias Configuration 0.0 dB Conversion Gain +12.0 dBm Third Order Intercept IIP3 100% On-Wafer RF and DC Testing


    Original
    PDF U1000-BD 02-May-07 MIL-STD-883 XU1000-BD-000V XU1000-BD-000W XU1000-BD-EV1 XU1000 XB1004-BD

    B1004

    Abstract: 982E-01 842427 on 5295 transistor 49135-1 52521 78304 transistor b1004 XB1004 XP1000
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias


    Original
    PDF B1004 01-Apr-05 MIL-STD-883 B1004 982E-01 842427 on 5295 transistor 49135-1 52521 78304 transistor b1004 XB1004 XP1000