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    XP1000 Price and Stock

    Microchip Technology Inc LXP1000-23-2

    SI PIN NON HERMETIC EPSM SMT
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    DigiKey LXP1000-23-2 Bulk 484 1
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    Mouser Electronics LXP1000-23-2
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    Newark LXP1000-23-2 Reel 500
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    Microchip Technology Inc LXP1000-23-2 27,566 18 Weeks
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    NAC LXP1000-23-2 70
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    Avnet Silica LXP1000-23-2 20 Weeks 500
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    Master Electronics LXP1000-23-2
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    OMRON Industrial Automation S8JX-P10005D

    AC/DC CONVERTER 5V 100W
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    OMRON Industrial Automation S8JX-P10005C

    AC/DC CONVERTER 5V 100W
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    OMRON Industrial Automation S8JX-P10005CD

    AC/DC CONVERTER 5V 100W
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    DigiKey S8JX-P10005CD Bulk 1
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    Taoglas Antenna Solutions FXP100.07.0100A

    RF ANT 2.3GHZ/2.5GHZ FLAT PATCH
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    Symmetry Electronics FXP100.07.0100A 1
    • 1 $19.44
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    • 100 $16.2
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    XP1000 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    XP1000 Mimix Broadband 17.0-24.0 GHz GaAs MMIC Power Amplifier Original PDF
    XP1000 Mimix Broadband 17.0-24.0 GHz GaAs MMIC Power Amplifier Original PDF

    XP1000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P1000 diode

    Abstract: diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2005 - Rev 05-May-05 Features Chip Device Layout High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain


    Original
    PDF P1000 05-May-05 MIL-STD-883 P1000 diode diode p1000 84-1LMI P1000 XB1004 XP1000 XU1000

    inductance R600

    Abstract: No abstract text available
    Text: 21.2-23.6 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, LO Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection


    Original
    PDF 01-Mar-05 MIL-STD-883 inductance R600

    pHEMT transistor MTBF

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier March 2005 - Rev 01-Mar-05 P1000P1 Features Packaged Chip Device tio n Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match


    Original
    PDF 01-Mar-05 P1000P1 XP1000 pHEMT transistor MTBF

    B1000

    Abstract: Mimix xb1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF 10-May-03 B1000 MIL-STD-883 Mimix xb1000

    74613

    Abstract: B1004-BD TS3332LD XB1004-BD 96330
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias


    Original
    PDF B1004-BD 12-Jun-07 MIL-STD-883 XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1 XB1004 74613 B1004-BD TS3332LD XB1004-BD 96330

    B1004-BD

    Abstract: TS3332LD XB1004-BD
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004-BD June 2007 - Rev 12-Jun-07 Features High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias +19.0 dBm P1dB Compression Point at Power Bias


    Original
    PDF B1004-BD 12-Jun-07 MIL-STD-883 XB1004-BD-000V XB1004-BD-000W XB1004-BD-EV1 XB1004 B1004-BD TS3332LD XB1004-BD

    B1000

    Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF

    UC1617

    Abstract: No abstract text available
    Text: 17.7-19.7 GHz GaAs MMIC Transmitter March 2005 - Rev 01-Mar-05 Features Chip Device Layout tio n Sub-harmonic Transmitter Integrated IR Mixer, Lo Buffer & Output Amplifier +20.0 dBm Output Third Order Intercept OIP3 2.0 dBm LO Drive Level 15.0 dB Image Rejection


    Original
    PDF 01-Mar-05 MIL-STD-883 UC1617

    B1001

    Abstract: XB1001 XP1000 XU1000
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF B1001 10-May-03 MIL-STD-883 B1001 XB1001 XP1000 XU1000

    XB1001

    Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS
    Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing


    Original
    PDF B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 April 2005 - Rev 01-Apr-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias


    Original
    PDF B1004 01-Apr-05 MIL-STD-883

    52521

    Abstract: 74613 78304 B1004 XB1001 XB1004 XP1000 XU1000
    Text: 16.0-30.0 GHz GaAs MMIC Buffer Amplifier B1004 March 2005 - Rev 15-Mar-05 Features Chip Device Layout High Dynamic Range Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.2 dB Noise Figure at Low Noise Bias


    Original
    PDF B1004 15-Mar-05 XB1001 MIL-STD-883 52521 74613 78304 B1004 XB1004 XP1000 XU1000

    P1000 diode

    Abstract: No abstract text available
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000-BD May 2007 - Rev 02-May-07 Features High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 19.0 dB Small Signal Gain +36.0 dBm Third Order Intercept OIP3


    Original
    PDF 02-May-07 P1000-BD MIL-STD-883 P1000 XP1000-BD-000V XP1000-BD-000W XP1000-BD-EV1 XP1000 P1000 diode

    diode p1000

    Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram
    Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector


    Original
    PDF P1000 01-May-02 MIL-STD-883 diode p1000 P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram

    PCB Rogers RO4003

    Abstract: 0170 v1 RO4003 XP1000 XP1000P1
    Text: 17.0-24.0 GHz GaAs MMIC Surface Mount Power Amplifier P1000P1 May 2002 - Rev 01-May-02 Features Packaged Chip Device y Surface Mount Leadless Package High Linearity Output Amplifier Temperature Compensated Output Power Detector Excellent Input/Output Match


    Original
    PDF P1000P1 01-May-02 XP1000 PCB Rogers RO4003 0170 v1 RO4003 XP1000P1

    disadvantage of fm transmitter single stage

    Abstract: XP1000 line out amplifiers d2 signal path designer
    Text: Application Note: Using Multiple MMIC Power Amplifiers to Increase IP3 and P1dB Scope Critical specifications for the transmitter output stage in microwave and millimeter-wave radios are the P1dB or PSAT point for non-linear systems (e.g. FM, FSK), and the IP3 for linear systems (e.g. QAM). For a specific application,


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    PDF XP1000 disadvantage of fm transmitter single stage line out amplifiers d2 signal path designer

    LDR 03

    Abstract: LDR05 valvo handbuch valvo handbuch rohren ORP60 valvo 18504 LDR -03 valvo BPY10 18550 Valvo
    Text: VALVO-HÀKOBUCH Spezialröhren II 19E7 j D a s V A L V O -H a n d b u c h Sp e zialröh re n I enthält d ie G ru p p e n V erstärkerröh ren O sz illo g ra fe n rö h re n M on ito rrö h re n P ro je ktio n s-B ild rö h re n L ich tpunkt-A btaströh ren


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    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    OT239

    Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
    Text: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to


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    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


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