AUIR0815STR
Abstract: AUIRS2117 st 13001 TRANSISTOR AUIR0815 ssd 545 dc drive
Text: Automotive Grade AUIR0815S BUFFER GATE DRIVER IC Features • High peak output current > 10A • Low propagation delay time • Negative turn off bias can be applied to VEE using an external supply • Two output pins permit to choose different Ron and Roff resistors.
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AUIR0815S
AUIR0815
250ns
260ns
AUIR0815STR
AUIRS2117
st 13001 TRANSISTOR
ssd 545 dc drive
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YTS2222A
Abstract: transistor marking 1p Z
Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage
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500mA
YTS2222A
300MHz
YTS2907A.
500mA,
Ta-25
150mA,
YTS2222A
transistor marking 1p Z
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2SD1406
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD1406 AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm 1Û3M AX. FEATURES: 03.2±CX2 . High DC Current Gain : hFg=300 Max. (V^jj= 5V , 1^=0.5A) & idi « r-^1 +* . Low Saturation Voltage •• VCE(sat)=1.0V(Max.)(Ic=3A,
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2SD1406
2SB1015
VCC-30V
2SD1406
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M51977P
Abstract: h13m M51977 20P2
Text: = M f f M < 'J = 7 IC > M51977P,FP *» □ > « • ' X f ( U B I .U M D USI977U n C HIM! « * /!••%* ) * & £ f t * ü £ * W * * U a u » ? VOUT *i MOS F E T * A * iiÉ fc 1 ? Ô f t . * IE • i> - a tn A iiu r-* r. u r i '* £ * * . #1 x f Ä M
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M51977P
60rts.
Cr-220or
100mA
lo--10mA
-100mA
M51977PfFP
cniiM05nT
h13m
M51977
20P2
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KTD880
Abstract: No abstract text available
Text: SILICON PNP TRANSISTOR TRIPLE DIFFUSED TYPE PCT PROCESS Ç APPLICATIONS ) • Audio F re qu en cy P o w e r A m p l i f ie r A p p l i c at i o n s . Ç FE A TURES ) • L ow C o l l e c t o r S a t u r a t i o n V ol t a ge : VCE(sat, = — 1. 0V(Max.) at Ic = — 3A, I B— — 0. 3A
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KTD880
10-3MAX.
220AB
-50mA,
KTD880
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Untitled
Abstract: No abstract text available
Text: 2N 2906 PN 2906 M • 2N2906A • PN2906A PNP SILICON GENERAL PURPOSE AMPLIFIERS AND SWITCHES 1 CASE TO-18 THE 2TT2906, 2N2906A, PN2906, PN2906A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SFEET SWITCHING APPLICATIONS. THEY ARE
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2N2906A
PN2906A
2TT2906,
2N2906A,
PN2906,
PN2906A
2N2221,
2N2221A,
PN2221
PN2221A
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Untitled
Abstract: No abstract text available
Text: V : -O THE 2N4402, 2N4403 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N4400 AND 2N4401 RESPECTIVELY. 2N4402 2N4403 CASE TO-92A EBC ABSOLUTE MAXIMUM RATINGS
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2N4402,
2N4403
2N4400
2N4401
2N4402
2N4403
O-92A
500fi
310mW
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KTN2222AS
Abstract: KTN2222S KTN2222AS SOT-23
Text: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.
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KTN2222S/AS
15QmA,
KTN2907S/2907AS.
KTN2222S
KTN2222AS
10x8x0
KTN2222AS
KTN2222AS SOT-23
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2-7D101A
Abstract: 2SA1428 2SC3668
Text: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)
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2SC3668
2SA1428.
2-7D101A
2-7D101A
2SA1428
2SC3668
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2SC5176
Abstract: No abstract text available
Text: 2SC5176 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • • Low Collector Saturation Voltage : VCE (sat)-°-4V (Max-) (at Ie = 3A)
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2SC5176
2SC5176
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TRANSISTOR 3360
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT11AF Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use In line operated switching power supplies in a w ide range of end use applications. This device com bines the latest state of the art
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BUT11AF
221D-02
O-220
15to20in
TRANSISTOR 3360
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transistor ksp2222a
Abstract: KSP2222A
Text: KSP2222A NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 • Collector-Em itter Voltage: V Ce o * 40V • Collector Dissipation: Pc max “ 625mW ABSOLUTE MAXIMUM RATINGS (TA-2 5 ‘C) C haracteristic Collector-Base Voltage Collector-Em itter Voltage
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KSP2222A
625mW
KSP2222
150mA.
500mA,
150mA,
100MHz
transistor ksp2222a
KSP2222A
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70H40
Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©
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2SA1162
2SA1163
2SC1815
2SA1015
2SC2458
2SC2459
2SA1048
2SA1049
2SC2712
2SC2713
70H40
transistor equivalent d2012
2SC734 equivalent
3sk73 equivalent
2sb502
2sa776 bl
2sc2075 equivalent
2sk For Low Noise Audio Amplifier Applications
2sa970 BL equivalent
2sa776 gr
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TOKO 455D
Abstract: rf107 CDB455C7 CDB455 455d CFV455D 33 455d
Text: r& T O K O TK10487 NARROW BAND FM-IF AMPLIFIER FEATURES APPLICATIONS • Built-in Signal Meter Driver ■ Cellular Phones ■ Wide Operating Voltage Range ■ Cordless Telephones ■ High Limiting Sensitivity ■ VHF Radio ■ Wide Frequency Range ■ Scanners
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TK10487
TK10487
MFP20
DIP20
RE-7437Z
NR-2876Z
CDB455C7
TOKO 455D
rf107
CDB455C7
CDB455
455d
CFV455D
33 455d
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Untitled
Abstract: No abstract text available
Text: 2SD1412 SILICON NPN TRIPLE DIFFUSED TYP E INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. 10.3 MAX. POWER AMPLIFIER APPLICATIONS. 03.2±O. 2 FEATURES: . Low Saturation Voltage : VcE sat =0-4V(Max.) U s at Ic=4A . Complementary to 2SB1019
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2SD1412
2SB1019
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2SC519A
Abstract: 521A 2SC520a 2SC521A 2sc5 520a
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC519A,520A, 521A POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES : • High Voltage : VCBO=130V 2SC519A ,Vc e o =110V(2SC519A) 02S.OMAX.
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2SC519A
2SC519A)
2SC520A
2SC521A
VCC-30V
2SC519A,
521A
2SC521A
2sc5
520a
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2SC5176
Abstract: 2SC517
Text: 2SC5176 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • INDUSTRIAL APPLICATIONS Low Collector Saturation Voltage : VCE ( s a t ) = 0.4V (Max.) (at Ie = 3A)
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2SC5176
2-10T1A
61001EA
2SC5176
2SC517
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KTN2222AU
Abstract: KTN2222U FC100H
Text: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c E x - 1 0 n A M a x . ; V c e = 6 0 V , V e b (o ff ) - 3 V .
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KTN2222U/AU
150mA,
KTN2907U/2907AU.
KTN2222U
KTN2222AU
KTN2222AU
FC100H
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HD61105
Abstract: 66205TFL X57d HCD66205L zdx20 HD66840 HD66205 HD66205TL HD66205TF HA 1115
Text: H D66205- Dot Matrix Liquid Crystal Graphic Display Common Driver with 80-Channel Outputs Description T he H D 66205F /H D 66205F L /H D 66205T F /H D 66205TFL/HD66205T/HD66205TL, the row LCD driver, features low output impedance and as many as 80 LCD outputs powered by 80 internal LCD
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D66205--
80-Channel
HD66205F/HD66205FL/HD66205TF/HD
66205TFL/HD66205T/HD66205TL,
HD66205
HD66205F,
HD66205FL,
HD66205TF
HD66205TFL,
pow100
HD61105
66205TFL
X57d
HCD66205L
zdx20
HD66840
HD66205TL
HA 1115
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ic lm224
Abstract: 0581B LM124F LM124N LM224D LM224F LM224N LM324N lm324f IC LM324N
Text: Philips Semiconductors Product specification LM124/224/324/324A/ SA534/LM2902 Low power quad op amps DESCRIPTION PIN CONFIGURATION The LM124/SA534/LM2902 series consists of four independent, high-gain, internally frequency-compensated operational amplifiers
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LM124/224/324/324A/
SA534/LM2902
LM124/SA534/LM2902
100dB
OT108-1
076E06S
MS-012AB
1995Nov27
711002b
ic lm224
0581B
LM124F
LM124N
LM224D
LM224F
LM224N
LM324N
lm324f
IC LM324N
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2SB1018
Abstract: 2SD1411
Text: Sb TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA CDI SCRETE/O P TO DEj| cJ0ci75SD □ □ □ 7 T S 1 ” 0 7"- 3 3 - <£>? "56C"Ó7951 S IL IC O N NPN T R IP L E D IF F U SE D TYPE HIGH CURRENT SWITCHING APPLICATIONS. • Unit; in mm 1Q3MAX ;• POWER AMPLIFIER APPLICATIONS.
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cJ0ci75SD
2SB1018
2SD1411
T-35-Ã
2SD1411
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YTS4402
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE YTS4402 FOR GENERAL PURPOSE USE S WITCHING AND AMPL I F I E R APPLICATIONS. FEATURES : • Low Leakage Current : Icjry=-100nA Max. , I g g y = 1 0 0 n A ( M a x . ) @ V c e = - 3 5 V , V BEV=0.4V • Excellent DC Current G a i n Line a r i t y
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YTS4402
-100nA
-150mA,
-15mA
-10mA
150mA
-500mA
-15mA
-50mA
-15tnA
YTS4402
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.
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KTN2222U/AU
x-10nA
KTN2907U/2907AU.
KTN2222U
KTN2222AU
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Untitled
Abstract: No abstract text available
Text: 61095 Features • • • • jn a- 2N2907A GENERAL PURPOSE PNP TRANSISTOR OPTOELECTRONIC PRODUCTS DIVISION 3 Leads - Dia 0 021 0.53 0.016(0.41) 0.210 (5.33) 0.170(4.32) TO-18 style package Rugged package - able to withstand high acceleration load Hermetically sealed
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2N2907A
Mil-S-19500
2N2907A
lc-50mA,
f-100kHz
100kHz
lc-150mA,
300ns,
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