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    2SC3668 Price and Stock

    Toshiba America Electronic Components 2SC3668-Y,T2F(M

    TRANS NPN 50V 2A MSTM
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    Toshiba America Electronic Components 2SC3668-Y,T2F(J

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    Toshiba America Electronic Components 2SC3668-Y,T2WNLF(J

    TRANS NPN 50V 2A MSTM
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    Toshiba America Electronic Components 2SC3668-O,T2CLAF(J

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    Toshiba America Electronic Components 2SC3668-Y,F2PANF(J

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    2SC3668 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC3668 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3668 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC3668 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC3668 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC3668 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC3668 Toshiba Silicon NPN transistor for power amplifier and power switching applications Scan PDF
    2SC3668 Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3668 Toshiba Silicon NPN Epitaxial Type Transistor Scan PDF
    2SC3668-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3668O Toshiba Silicon NPN Epitaxial Transistor Scan PDF
    2SC3668-O Toshiba Power Amp Apps Scan PDF
    2SC3668-O,T2CLAF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF
    2SC3668-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC3668Y Toshiba Silicon NPN Epitaxial Transistor Scan PDF
    2SC3668-Y Toshiba Power Amp Apps Scan PDF
    2SC3668-Y,F2PANF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF
    2SC3668-Y,T2F(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF
    2SC3668-Y,T2F(M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF
    2SC3668-Y,T2WNLF(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 50V SC71 Original PDF

    2SC3668 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor c3668

    Abstract: c3668 2SC3668 2-7D101A 2SA1428
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    PDF 2SC3668 2SA1428. transistor c3668 c3668 2SC3668 2-7D101A 2SA1428

    c3668

    Abstract: transistor c3668 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    PDF 2SC3668 2SA1428. c3668 transistor c3668 2-7D101A 2SA1428 2SC3668

    c3668

    Abstract: transistor c3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    PDF 2SC3668 2SA1428. 2-7D101A c3668 transistor c3668

    c3668

    Abstract: 2SC3668 2-7D101A 2SA1428
    Text: 2SC3668 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3668 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW • スイッチング時間が速い。


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    PDF 2SC3668 2SA1428 2-7D101A 20070701-JA c3668 2SC3668 2-7D101A 2SA1428

    transistor c3668

    Abstract: c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668
    Text: 2SC3668 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3668 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 1000 mW


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    PDF 2SC3668 2SA1428. transistor c3668 c3668 2SA1428 transistor 2-7D101A 2SA1428 2SC3668

    c3668

    Abstract: 2SC3668 2-7D101A 2SA1428
    Text: 2SC3668 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3668 ○ 電力増幅用 ○ 電力スイッチング用 単位: mm • 飽和電圧が低い。 • 許容コレクタ損失が大きい。 : PC = 1000 mW • スイッチング時間が速い。


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    PDF 2SC3668 2SA1428 2-7D101A c3668 2SC3668 2-7D101A 2SA1428

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    transistor A1428

    Abstract: toshiba a1428 a1428 2SA1428 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type Ft 2-7D101A 2SA1428 2SC3668
    Text: 2SA1428 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1428 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High-speed switching: tstg = 1.0 µs (typ.)


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    PDF 2SA1428 2SC3668 transistor A1428 toshiba a1428 a1428 2SA1428 transistor TOSHIBA Transistor Silicon PNP Epitaxial Type Ft 2-7D101A 2SA1428 2SC3668

    A1428

    Abstract: 2-7D101A 2SA1428 2SC3668
    Text: 2SA1428 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1428 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


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    PDF 2SA1428 2SC3668 2-7D101A A1428 2-7D101A 2SA1428 2SC3668

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SA1428

    Abstract: 2-7D101A 2SC3668 A1428
    Text: 2SA1428 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1428 ○ 電力増幅用 ○ 電力スイッチング用 • 単位: mm コレクタ•エミッタ間飽和電圧が低い。 : VCE (sat) = −0.5 V (最大) (IC = −1 A)


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    PDF 2SA1428 2SC3668 2-7D101A 20070701-JA 2SA1428 2-7D101A 2SC3668 A1428

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Text: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS 7.1 M A X • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


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    PDF 2SC3668 2SA1428. 2-7D101A 2-7D101A 2SA1428 2SC3668

    2SC3668

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 U nit in mm POWER SWITCHING APPLICATIONS • Low Saturation Voltage : V(^e (sat)~ 0.5V (Max.) • High Speed Switching Time : tstg= 1.0/^s (Typ.)


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    PDF 2SC3668 2SA1428, 2SC3668

    Untitled

    Abstract: No abstract text available
    Text: 2SA1428 SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. U n it in mm POWER SWITCHING APPLICATIONS. • Low Collector S aturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = - 1A) • H igh Speed Sw itching Time : • Complementary to 2SC3668.


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    PDF 2SA1428 2SC3668. 2-7D101A

    2SA1428

    Abstract: 2SC3668
    Text: TOSHIBA 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • • Low Saturation Voltage : Vce (sat) = 0-5V (Max.) High Speed Switching Time : tstg= 1.0/^s (Typ.) Complementary to 2SA1428.


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    PDF 2SC3668 2SA1428. 961001EAA2 2SA1428 2SC3668

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Text: TO SH IB A 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS PO W ER SWITCHING APPLICATIONS • Low Saturation V oltage : V q e (sat) = 0.5V (Max.) • H igh Speed S w itch in g Tim e : t stg = 1 .0/us (Typ.)


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    PDF 2SC3668 2SA1428. 2-7D101A 2-7D101A 2SA1428 2SC3668

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 PO W ER AM PLIFIER APPLICATIONS Unit in mm PO W ER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V q e (sat) = 0-5V(Max.) High Speed Switching Time : tstg = 1.0,«s (Typ.)


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    PDF 2SC3668 2SA1428.

    2-7D101A

    Abstract: 2SA1428 2SC3668
    Text: TO SH IBA 2SC3668 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3668 Unit in mm POWER SWITCHING APPLICATIONS • • • Low Saturation Voltage : V c e (sat)“ 0.5V (Max.) High Speed Switching Time : tgtg^l.O/^siTyp.)


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    PDF 2SC3668 2SA1428. 2-7D101A 2-7D101A 2SA1428 2SC3668

    2SD2334

    Abstract: 2sc4814 2SD2076 2216y 2SD1546 2sd2190 2SD1930 2SD1755 2sc2562 2SC4062
    Text: - m. £ € Manuf. T y p e No. 2 SD 2174 fâ 2SD 2175 □— A 2SD 2176 - # h SANYO T 2SC4488 M 3E TO S H I B A m B NEC 2SC3677 2SD1593 2SC3665 2SD1312 B HITACHI ÎL * ± a FU JITSU tö T MATSUS H I T A z m MITSUBISHI T 2SD 2185 fe' T 2S0 2186 □— A 2SD 2187


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    PDF 2SD2174 2SD2175 2SD2176 2SD2177 2SD2185 2SD2186 2SD2187 2SD2188 2SD2189 2SD2190 2SD2334 2sc4814 2SD2076 2216y 2SD1546 2SD1930 2SD1755 2sc2562 2SC4062

    NEC k 3654

    Abstract: 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES
    Text: - m € T y p e No. £ Manuf. 2SC 3 6 4 0 iE. 2SC 3 6 4 1 H 2SC 3 6 4 2 ^ & H # SANYO TOSHIBA S NEC 2SC3643 2SC3536 2SC3644 2SC3536 tL HITACHI * ± i1 FUJITSU tfi T MATSUSHITA # 2SC3535 2SC3737 H. n 2SC3536 2SC3738 2SC 3 6 4 4 J H n 2SC3536 & 2SC2880 2SC 3 6 4 6


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    PDF 2SC3643 2SC3536 2SC3644 2SC3535 2SC3737 2SC3738 NEC k 3654 2SC3536 DTC124ES Hitachi 3640 DTC114ES 2SC 3674 S 2SC3738 2sc3242a 2SC3535 DTC144ES

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346