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    2SC517 Price and Stock

    Toshiba America Electronic Components 2SC5171,Q(J

    TRANS NPN 180V 2A TO220NIS
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    Quest Components 2SC5171,Q(J 53
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    Toshiba America Electronic Components 2SC5171,ONKQ(J

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    Toshiba America Electronic Components 2SC5171(ONK,Q,M)

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    Toshiba America Electronic Components 2SC5171,MATUDQ(J

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    Toshiba America Electronic Components 2SC5172(YAZK,Q,M)

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    2SC517 Datasheets (68)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC517 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SC517 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SC517 Unknown Scan PDF
    2SC517 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC517 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC517 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SC517 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC517 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC517 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC517 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SC517 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC517 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC517 Toshiba Japanese Transistor Data Book Scan PDF
    2SC5171 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SA1930 Original PDF
    2SC5171 Unknown Scan PDF
    2SC5171 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC5171 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5171 Toshiba Silicon NPN transistor for power amplifier and driver stage amplifier applications Scan PDF
    2SC5171,MATUDQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF
    2SC5171,ONKQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS NPN 2A 180V TO220-3 Original PDF

    2SC517 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5174

    Abstract: 2SA1932 2SC5174
    Text: 2SC5174 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1932 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SC5174 2SA1932 2-10T1A c5174 2SA1932 2SC5174

    C5174

    Abstract: 2SC5174 2SA1932
    Text: 2SC5174 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5174 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 100 MHz 標準 • 2SA1932 とコンプリメンタリになります。


    Original     		PDF 2SC5174 2SA1932 2-10T1A 20070701-JA C5174 2SC5174 2SA1932

    A1932

    Abstract: 2SA1932 2SC5174
    Text: 2SA1932 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1932 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 70 MHz 標準 • 2SC5174 とコンプリメンタリになります。


    Original     		PDF 2SA1932 2SC5174 2-10T1A 20070701-JA A1932 2SA1932 2SC5174

    2SC5173

    Abstract: No abstract text available
    Text: 2SC5173 東芝トランジスタ シリコンNPN三重拡散形 2SC5173 ○ 高耐圧一般増幅用 ○ カラーテレビ水平ドライブ用 ○ カラーテレビクロマ出力用 単位: mm • 高耐圧です。 • コレクタ出力容量が小さい。 : Cob = 3.0 pF 標準


    Original     		PDF 2SC5173 2-10T1A 20070701-JA 2SC5173

    c5171

    Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A c5171 transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930

    2SC5176

    Abstract: No abstract text available
    Text: 2SC5176 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC5176 High-Current Switching Applications DC-DC Converter Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		PDF 2SC5176 2SC5176

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SC5171 TO – 220F TRANSISTOR NPN 1. BASE FEATURES z High Transition Frequency z Power Amplifier Applications 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF O-220F 2SC5171 100mA 300mA

    transistor NEC D 587

    Abstract: ic nec 2701 marking 84T MARKING 452 4PIN NEC 2134 transistor 2SC5178 2SC5178R 2SC5178R-T1 2SC5178R-T2 84t MARKING
    Text: DATA SHEET SILICON TRANSISTOR 2SC5178R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm +0.2 2.9±0.2 (1.8) 0.95 0.85 evaluation (available in batches of 50). ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)


    Original     		PDF 2SC5178R transistor NEC D 587 ic nec 2701 marking 84T MARKING 452 4PIN NEC 2134 transistor 2SC5178 2SC5178R 2SC5178R-T1 2SC5178R-T2 84t MARKING

    Untitled

    Abstract: No abstract text available
    Text: 2SC5172 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC5172 Switching Regulator and High-Voltage Switching Applications Unit: mm High-Speed DC-DC Converter Applications • Excellent switching times: tr = 0.5 µs (max), • High collector breakdown voltage: VCEO = 400 V


    Original     		PDF 2SC5172

    2sc5175

    Abstract: No abstract text available
    Text: 2SC5175 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5175 High-Current Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE sat = 0.4 V (max) • High-speed switching: tstg = 0.8 s (typ.) (IC = 2.5 A, IB = 125 mA) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SC5175 2-10T1A 2sc5175

    2sc5171

    Abstract: No abstract text available
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original     		PDF 2SC5171 2SA1930 2-10R1A 2sc5171

    A1932

    Abstract: transistor 2SA1932 2SA1932 2SC5174
    Text: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SA1932 2SC5174 2-10T1A A1932 transistor 2SA1932 2SA1932 2SC5174

    A1930

    Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
    Text: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。


    Original     		PDF 2SA1930 2SC5171 SC-67 2-10R1A 20070701-JA A1930 2SA1930 2sc5171 2sa1930 2SC5171

    d1589

    Abstract: transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988
    Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR PPA827TF HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 6-PIN 2 u 2SC5179 THIN-TYPE SMALL MINI MOLD FEATURES PACKAGE DRAWINGS (Unit: mm) • High gain with low operating current


    Original     		PDF PPA827TF 2SC5179) PPA827TF-T1 d1589 transistor D1589 D1138 transistor D1650 NEC D1589 d1138 transistor transistor D1138 Transistor D5148 Data D4204 D988

    Untitled

    Abstract: No abstract text available
    Text: 2SA1932 SILICON P N P EPITAXIAL T Y P E Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S . D R IV E R ST A G E A M P L IF IE R A P P L IC A T IO N S. • • High Transition Frequency : f'j' = 70MHz Typ. Complementary to 2SC5174 « 7iT M A X I M U M R A T IN G S (Ta = 25°C


    OCR Scan     		PDF 2SA1932 70MHz 2SC5174 2-10T1A --230V, --10mA, --100mA --500mA, --50mA -500m

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC5175 U n it in mm H IG H C U R R E N T S W IT C H IN G A P P L IC A T IO N S . • • Low Saturation Voltage : V ç e s a t ~0.4V (MAX.) (at Ic = 2.5A, IB = 125mA) High Speed Switching Time : tstg = 0.8//s (Typ.) M A X I M U M R A T IN G S (Ta = 25°C)


    OCR Scan     		PDF 2SC5175 125mA) 125mA 125mA

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5176 2 S C 5 1 76 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SW ITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER APPLICATIONS • Low Collector Saturation Voltage : V C E ( s a t ) = 0 . 4 V (Max.) (at IC = 3 A )


    OCR Scan     		PDF 2SC5176

    Untitled

    Abstract: No abstract text available
    Text: 2SC5174 TO SHIBA 2 S C 5 1 74 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0.2 • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1932 01.2 ~ £r M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5174 2SA1932 COLLEC97

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5173 il TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSE TYPE PCT PROCESS 2 S C 5 1 73 Unit in mm HIGH VOLTAGE SWITCHING AND AM PLIFIER APPLICATIONS COLOR TV HORIZONTAL DRIVER APPLICATIONS 10 COLOR TV CHROM A OUTPUT APPLICATIONS • • • High Voltage


    OCR Scan     		PDF 2SC5173

    Untitled

    Abstract: No abstract text available
    Text: 2SA1932 TOSHIBA 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 i 0 1 .2 High Transition Frequency : frp = 70MHz Typ. Complementary to 2SC5174 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SA1932 70MHz 2SC5174 2-10T1A 100ms Ta-25

    transistor NEC D 586

    Abstract: sn 7441 ic nec 2701
    Text: DATA SHEET SILICON TRANSISTOR 2SC5178 NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consum ption and high gain | S 2 i e |2 = | S 2 i e |2 • 11.5 dB TYP. @ = 10.5 dB TYP. @ Vce =


    OCR Scan     		PDF 2SC5178 SC-61 2SC5178-T1 2SC5178-T2 transistor NEC D 586 sn 7441 ic nec 2701

    2SC5176

    Abstract: No abstract text available
    Text: 2SC5176 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 5 1 76 Unit in mm HIGH CURRENT SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • • Low Collector Saturation Voltage : VCE (sat)-°-4V (Max-) (at Ie = 3A)


    OCR Scan     		PDF 2SC5176 2SC5176

    A1932

    Abstract: transistor 2SA1932 2SA1932 2SC5174
    Text: 2SA1932 TO SH IB A 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 01.2 High Transition Frequency : fx = 70MHz Typ. Complementary to 2SC5174 M A XIM U M RATINGS (Ta=25°C)


    OCR Scan     		PDF 2SA1932 70MHz 2SC5174 A1932 transistor 2SA1932 2SA1932 2SC5174

    transistor NEC D 587

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5179 NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS Low current consum ption and high gain Units: mm |S2ie|2 = 9 dB T Y P . @ V ce = 2 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5179 SC-70 2SC5179-T1 2SC5179-T2 transistor NEC D 587