IRFF230
Abstract: TB334
Text: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF230
TA17412.
O-205AF
IRFF230
TB334
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TA17412
Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
1578f
TA17412
irf630
irf630 equivalent
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 p
IRF630 INTERSIL
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IRF232
Abstract: IRF230 IRF231 IRF233 TB334
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF230,
IRF231,
IRF232,
IRF233
IRF232
IRF230
IRF231
IRF233
TB334
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irf230
Abstract: IRF2301 irf232
Text: IRF230, IRF231, IRF232, IRF233 S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF230,
IRF231,
IRF232,
IRF233
TA17412.
irf230
IRF2301
irf232
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BUZ32
Abstract: TB334
Text: BUZ32 Semiconductor Data Sheet 9.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET October 1998 File Number 2416.1 Features • 9.5A, 200V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.400Ω (BUZ32) field effect transistor designed for applications such as
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BUZ32
BUZ32)
TA17412.
BUZ32
TB334
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irf630
Abstract: rf1s630sm9a IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power
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IRF630,
RF1S630SM
IRF63
O220AB
O263AB
RF1S630SM
irf630
rf1s630sm9a
IRF630 Fairchild
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IRF632 datasheet
Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
IRF632 datasheet
IRF630 datasheet
IRF630
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 mosfet
IRF630 Fairchild
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Untitled
Abstract: No abstract text available
Text: IRFF230, IRFF231, IRFF232, IRFF233 S E M I C O N D U C T O R 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF230,
IRFF231,
IRFF232,
IRFF233
TA17412.
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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55A200V
Abstract: IRFF230 TB334
Text: IRFF230 Data Sheet January 2002 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF230
TA17412.
55A200V
IRFF230
TB334
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Untitled
Abstract: No abstract text available
Text: IRFF230 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF230
IRFF230
O-205AF
TB334
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Untitled
Abstract: No abstract text available
Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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OCR Scan
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IRF630,
RF1S630SM
400i2
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Untitled
Abstract: No abstract text available
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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IRF230,
IRF231,
IRF232,
IRF233
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Untitled
Abstract: No abstract text available
Text: H A R R IRFF230, IRFF231, IRFF232, IRFF233 S s e m i c o n d u c t o r 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRFF230,
IRFF231,
IRFF232,
IRFF233
RFF232,
RFF233
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IRF231
Abstract: irf233 irf230 irf232
Text: IRF230, IRF231, IRF232, IRF233 HARRIS S E M I C O N D U C T O R 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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OCR Scan
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IRF230,
IRF231,
IRF232,
IRF233
TA17412.
RF232,
IRF231
irf233
irf230
irf232
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