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    IRFF230 Price and Stock

    International Rectifier IRFF230

    Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39
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    Arrow Electronics IRFF230 17 16 Weeks 1
    • 1 -
    • 10 $15.41
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    Bristol Electronics IRFF230 13
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    Quest Components IRFF230 1
    • 1 $47.312
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    ComSIT USA IRFF230 32
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    Infineon Technologies AG IRFF230

    Single N-Channel 200 V 2.5 W 42.1 nC Hexfet Transistor Through Hole - TO-39
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    Future Electronics IRFF230 Tray 100
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    New Jersey Semiconductor Products, Inc. IRFF230

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF230 8,812 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
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    New Jersey Semiconductor Products Inc IRFF230

    TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,5.5A I(D),TO-205AF
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    Quest Components IRFF230 7,049
    • 1 $20.8
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    Harris Semiconductor IRFF230R

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF230R 5
    • 1 $73.7934
    • 10 $70.1037
    • 100 $70.1037
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    Find more IRFF230 price and stock on Findchips.com

    IRFF230 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF230 International Rectifier HEXFET Transistor Original PDF
    IRFF230 Intersil 5.5A, 200V, 0.400 ?, N-Channel Power MOSFET Original PDF
    IRFF230 Semelab N-Channel Enhancement Mode Transistor Original PDF
    IRFF230 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF230 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF230 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF230 International Rectifier N-Channel Power MOSFETs in a TO-39 Package 200 Volt, 0.4 Ohm Scan PDF
    IRFF230 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF230 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF230 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF230 Unknown FET Data Book Scan PDF
    IRFF230 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF230 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF230 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF230 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF230R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF230R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF230R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF230 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6798

    Abstract: IRFF230
    Text: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


    Original     		PDF IRFF230 2N6798 O-205AF) 2N6798 IRFF230

    Untitled

    Abstract: No abstract text available
    Text: IRFF230, IRFF231, IRFF232, IRFF233 S E M I C O N D U C T O R 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF230, IRFF231, IRFF232, IRFF233 TA17412.

    IRFF230

    Abstract: JANTX2N6798 JANTXV2N6798
    Text: PD -90431C IRFF230 JANTX2N6798 JANTXV2N6798 REF:MIL-PRF-19500/557 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF230 BVDSS 200V RDS(on) 0.40Ω ID 5.5A  The HEXFET technology is the key to International


    Original     		PDF -90431C IRFF230 JANTX2N6798 JANTXV2N6798 MIL-PRF-19500/557 O-205AF) IRFF230 JANTX2N6798 JANTXV2N6798

    Untitled

    Abstract: No abstract text available
    Text: PD -90431C IRFF230 JANTX2N6798 JANTXV2N6798 REF:MIL-PRF-19500/557 200V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF230 BVDSS 200V RDS(on) 0.40Ω ID 5.5A  The HEXFET technology is the key to International


    Original     		PDF -90431C IRFF230 JANTX2N6798 JANTXV2N6798 MIL-PRF-19500/557 O-205AF)

    55A200V

    Abstract: IRFF230 TB334
    Text: IRFF230 Data Sheet January 2002 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF230 TA17412. 55A200V IRFF230 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


    Original     		PDF IRFF230 2N6798 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: IRFF230 Data Sheet Title FF2 bt 5A, 0V, 00 m, March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF230 IRFF230 O-205AF TB334

    2N6798

    Abstract: IRFF230 6150C
    Text: IRFF230 2N6798 MECHANICAL DATA Dimensions in mm inches 8.64 (0.34) 9.40 (0.37) N-CHANNEL ENHANCEMENT MODE TRANSISTOR 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 200V


    Original     		PDF IRFF230 2N6798 O-205AF) 2N6798 IRFF230 6150C

    IRFF230

    Abstract: TB334
    Text: IRFF230 Data Sheet March 1999 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET • 5.5A, 200V Formerly developmental type TA17412. Ordering Information IRFF230 PACKAGE TO-205AF 1892.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF230 TA17412. O-205AF IRFF230 TB334

    IAf630

    Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p


    Original     		PDF RRF620 2SK755 2SK782 TX124 IRFJ220 SFN02804 SFN02814 SFN204A3 YTF220 YTF620 IAf630 RS630 BUZ73 sfn02204 tx134 sgsp567 SGSP367 2SK400

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    F230

    Abstract: IRFF230 IRFF231
    Text: FUT FIELD EFFECT POWER TRANSISTOR IRFF230.231 5.5 AMPERES 200,150 VOLTS RDS ON = 0.4 il Prelim inary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF -IRFF231 F230 IRFF230 IRFF231

    IRFF230

    Abstract: IRFF231 IRFF232 IRFF233
    Text: Standard Power M O S F E T s - IRFF230, IRFF231 IRFF232, IRFF233 File N u m be r N-Channel Enhancement-Mode Power Field-Effect Transistors 4 .5 A a n d 5.5 A , 1 5 0 V - 2 0 0 V rDsioni = 0 .4 0 a n d 0 .6 0 N-CHANNEL enhancement MODE


    OCR Scan     		PDF IRFF230, IRFF231, IRFF232, IRFF233 IRFF232 IRFF233 ff230 75bvdss IRFF230 IRFF231

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R 12E 0 | F b3b?5S4 OOa bTOS 5 | IRFF230' IRFF233 CASE 79-05, STYLE 6 TO-39 TQ-205AF M AXIM U M RATINGS Symbol IRFF230 IRFF233 Drain-Source Voltage VDSS 200 150 Vdc Drain-Gate Voltage (Rq s = 1.0 mil) V d GR 200 150 Vdc Rating Gate-Source Voltage


    OCR Scan     		PDF IRFF230' IRFF233 IRFF230 IRFF233 TQ-205AF)

    LS 2027

    Abstract: IRFF230R IRFF231R IRFF232R IRFF233R diode deg avalanche zo 150
    Text: Rugged Power MOSFETs IRFF230R, IRFF231R, IRFF232R, IRFF233R File Number 2027 Avalanche Energy Rated N-Channel Power MOSFETs 4.5A and 5.5A, 150V-200V rDS on = 0.40 and 0.6fi N -C H A N N E L E N H A N C E M E N T M O D E D Features: • S in g le pu lse avalanche e n ergy ra ted


    OCR Scan     		PDF IRFF230R, IRFF231R, IRFF232R, IRFF233R 50V-200V IRFF232R IRFF233R FF230F LS 2027 IRFF230R IRFF231R diode deg avalanche zo 150

    IRFF230R

    Abstract: No abstract text available
    Text: 23 HARRIS IR FF230/231/232/233 IRFF230R/231R/232R/233R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features TQ-205AF • 4.5A and 5.5A, 150V - 200V • rDS on = ° - 4 fl an(J ° - 6 fl • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF FF230/231/232/233 IRFF230R/231R/232R/233R TQ-205AF IRFF230, IRFF231, IRFF232, IRFF233 IRFF230R, IRFF231R, IRFF232R, IRFF230R

    Untitled

    Abstract: No abstract text available
    Text: H A R R IRFF230, IRFF231, IRFF232, IRFF233 S s e m i c o n d u c t o r 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF230, IRFF231, IRFF232, IRFF233 RFF232, RFF233

    TA17412

    Abstract: No abstract text available
    Text: h a r r is IRFF230, IRFF231, IRFF232, IRFF233 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150 V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF230, IRFF231, IRFF232, IRFF233 TA17412. RFF231, RFF232, TA17412

    Untitled

    Abstract: No abstract text available
    Text: I p| j -0 P P I Q Ü Q P Q I Provisional Data Sheet No. PD-9.431 B I O R Rectifier JANTX2N6798 HEXFET POWER MOSFET JANTXV2N6798 [REF:MIL-PRF-19500/557] [GENERIC :IRFF230] N-CHANNEL 200 Volt, 0.40Q HEXFET H E X F E T techn o lo g y is th e key to Intern ation al


    OCR Scan     		PDF JANTX2N6798 JANTXV2N6798 MIL-PRF-19500/557] IRFF230]

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211