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    SIA923AEDJ Price and Stock

    Vishay Siliconix SIA923AEDJ-T1-GE3

    MOSFET 2P-CH 20V 4.5A PPAK8X8
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    DigiKey SIA923AEDJ-T1-GE3 Digi-Reel 21,563 1
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    SIA923AEDJ-T1-GE3 Cut Tape 21,563 1
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    SIA923AEDJ-T1-GE3 Reel 18,000 3,000
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    Vishay Intertechnologies SIA923AEDJ-T1-GE3

    Trans MOSFET Array Dual P-CH 20V 4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA923AEDJ-T1-GE3)
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    Avnet Americas SIA923AEDJ-T1-GE3 Reel 18 Weeks 6,000
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    Mouser Electronics SIA923AEDJ-T1-GE3 27,369
    • 1 $0.63
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    • 1000 $0.232
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    Newark SIA923AEDJ-T1-GE3 Reel 6,000
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    SIA923AEDJ-T1-GE3 Cut Tape 6,000
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    TTI SIA923AEDJ-T1-GE3 Reel 6,000
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    TME SIA923AEDJ-T1-GE3 3,000
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    EBV Elektronik SIA923AEDJ-T1-GE3 22 Weeks 3,000
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    SIA923AEDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA923AEDJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.5A SC70-6L Original PDF

    SIA923AEDJ Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiA923AEDJ www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 RDS(on) () MAX. ID (A) 0.054 at VGS = -4.5 V -4.5 a 0.070 at VGS = -2.5 V -4.5 a 0.104 at VGS = -1.8 V -4.5 a 0.165 at VGS = -1.5 V -1.5 Qg (TYP.)


    Original     		PDF SiA923AEDJ SC-70-6L SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406