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    SI7997DP Price and Stock

    Vishay Siliconix SI7997DP-T1-GE3

    MOSFET 2P-CH 30V 60A PPAK SO8
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    DigiKey SI7997DP-T1-GE3 Digi-Reel 12,771 1
    • 1 $2.93
    • 10 $1.899
    • 100 $2.93
    • 1000 $0.97816
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    SI7997DP-T1-GE3 Cut Tape 12,771 1
    • 1 $2.93
    • 10 $1.899
    • 100 $2.93
    • 1000 $0.97816
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    SI7997DP-T1-GE3 Reel 12,000 3,000
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    RS SI7997DP-T1-GE3 Bulk 3,000
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    Quest Components SI7997DP-T1-GE3 67
    • 1 $3.024
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    • 100 $1.6632
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    Chip 1 Exchange SI7997DP-T1-GE3 14,158
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    New Advantage Corporation SI7997DP-T1-GE3 18,000 1
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    Vishay Intertechnologies SI7997DP-T1-GE3

    DUAL P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI7997DP-T1-GE3)
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    Avnet Americas SI7997DP-T1-GE3 Reel 21,000 17 Weeks 3,000
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    SI7997DP-T1-GE3 Ammo Pack 19 Weeks, 1 Days 1
    • 1 $2.32
    • 10 $1.91
    • 100 $1.6
    • 1000 $1.6
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    Mouser Electronics SI7997DP-T1-GE3 117,797
    • 1 $2.33
    • 10 $1.71
    • 100 $1.32
    • 1000 $0.979
    • 10000 $0.888
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    Verical SI7997DP-T1-GE3 3,000 3,000
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    Arrow Electronics SI7997DP-T1-GE3 3,000 17 Weeks 3,000
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    Newark SI7997DP-T1-GE3 Reel 3,000 3,000
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    SI7997DP-T1-GE3 Cut Tape 297 1
    • 1 $2.32
    • 10 $1.91
    • 100 $1.6
    • 1000 $1.5
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    Bristol Electronics SI7997DP-T1-GE3 2,395
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    Quest Components SI7997DP-T1-GE3 375
    • 1 $3.024
    • 10 $3.024
    • 100 $1.512
    • 1000 $1.3986
    • 10000 $1.3986
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    TTI SI7997DP-T1-GE3 Reel 9,000 3,000
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    TME SI7997DP-T1-GE3 1
    • 1 $1.85
    • 10 $1.67
    • 100 $1.35
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    Avnet Asia SI7997DP-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SI7997DP-T1-GE3 18 Weeks 3,000
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    Vyrian SI7997DP-T1-GE3 3,000
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    Vishay Intertechnologies SI7997DP-T1-GE3.

    Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:30V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:60A; No. Of Pins:8Pins; Product Range:- Rohs Compliant: Yes |Vishay SI7997DP-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI7997DP-T1-GE3. Reel 3,000
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    Vishay Siliconix SI7997DPT1GE3

    Electronic Component
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    ComSIT USA SI7997DPT1GE3 45
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    Vishay Huntington SI7997DP-T1-GE3

    Dual P-Channel 30 V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI7997DP-T1-GE3 52,350
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    • 100 $1.4476
    • 1000 $1.198
    • 10000 $1.198
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    SI7997DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7997DP-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 30V 60A 8-SOIC Original PDF

    SI7997DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI7997Dp

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7997

    Abstract: No abstract text available
    Text: SPICE Device Model Si7997DP Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7997DP 18-Jul-08 si7997

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997Delectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997Demarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997Delectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7997

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997DP-T1-GE3 18-Jul-08 si7997

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () - 30 0.0055 at VGS = - 10 V - 60 0.0078 at VGS = - 4.5 V - 60 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7997DP 2002/95/EC Si7997DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si7997DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7997DP AN609, 0817m 7328m 1996m 3826m 6809m 1907m 6284m

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of


    Original     		PDF SC-75 Si1865DDL Si7997DP SiA923AEDJ SiA929DJ SC-70 SiA527DJ SiA537EDJ VMN-PT0197-1402

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,


    Original     		PDF 1212-8S Si7157DP SiSS23DN Si5415AEDU com/mosfets/12-rated-on-res/ VMN-MS6912-1406

    Si7141

    Abstract: SiA447DJ SI7615A
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on


    Original     		PDF SC-75 SC-70 VMN-PT0197-1209 Si7141 SiA447DJ SI7615A

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836