Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    KAG TRANSISTOR Search Results

    KAG TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    KAG TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SK9124

    Abstract: 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N491A 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871
    Text: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 2N491A Online Store 2N491A Diodes NPN EPITAXIAL PO W ER TRANSISTO R IN TO 6 6 HERM ETIC Transistors P AC KAG E


    Original     		PDF com/2n491a 2N491A 2N491A SK9124 2N1671B Thyr AMERICAN MICROSEMICONDUCTOR 2N4949 2N490 2N2646 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N4871

    KAG TRANSISTOR

    Abstract: 2n5642
    Text: 2N5642 NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE M. 1 of 1 Home Part Number: 2N5642 Online Store 2N5642 Diodes NPN BIPO LAR TRANSISTO R IN A C ERAM IC SURF AC E M O UNT Transistors PAC KAG E F O R HIG H REL APPLIC ATIO NS


    Original     		PDF 2N5642 com/2n5642 2N5642 KAG TRANSISTOR

    7445 block diagram

    Abstract: ic 7445 76232 7445c binary to bcd ic ttl 7445 TTL OR SN 7445
    Text: TTL MSI TYPES SN5445, SN7445 BCD-TO-DECIMAL DECODERS/DRIVERS _ B U L L E T IN N O . OL-S 7 2 1 1 8 1 6 , D E C E M B E R 1972 FOR USE AS LAMP, RELAY, OR MOS DRIVERS featuring SN 5445 . . . J OR W P AC KAG E SN 7445 . . . J O R N P AC KAG E IT O P V IE W !


    OCR Scan     		PDF SN5445, SN7445 80-mA 7445 block diagram ic 7445 76232 7445c binary to bcd ic ttl 7445 TTL OR SN 7445

    54LS145

    Abstract: No abstract text available
    Text: SN54145, SN54LS145, SN74145, SN74LS145 BCD TO-DECIIVIAL DECODERS/DRIVERS MARCH 1974 - REVISED MARCH 1988 FOR USE AS LAM P, R E L A Y , OR MOS D R IV E R S S N 5 41 45 . SN 54LS145 J OR W P AC KAG E S N 7 4 1 4 5 . . . N P AC KAG E Full Decoding o f In p u t Logic


    OCR Scan     		PDF SN54145, SN54LS145, SN74145, SN74LS145 54LS145 74LS145

    Untitled

    Abstract: No abstract text available
    Text: CD4048A Types Th e se types are supplied in 16-lead h erm etic d u a l-in -lin e c e ra m ic p ac kag es D an d F su ffixe s , 1 6 -le a d d u a l-in -lin e ptastic p ack­ ag e (E su ffix), 16 -le a d ce ra m ic flat pac kag e {K su ffix), and in c h ip fo rm (H suffix).


    OCR Scan     		PDF CD4048A 16-lead

    ap 4606

    Abstract: nec 2651 ic CD 4047 8 pin ic 3773
    Text: DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consum ption and High Gain PAC KAG E DIMENSIONS Units: mm |Szie|2 = 9.0 dB TYP. @ V ce = 2 V, Ic = 7 mA, f = 2 GHz


    OCR Scan     		PDF 2SC5177 SC-59 2SC5177-T1 2SC5177-T2 ap 4606 nec 2651 ic CD 4047 8 pin ic 3773

    transistor sc 1972

    Abstract: TIP3055 TIP2955 NPN power transistor TIP2955 transistor PNP TIP2955 texas instruments tip3055
    Text: TIP2955 PNP SILICON POWER TRANSISTOR _ JA N U A R Y 1972 • R E V IS E D M AY 1995 • Designed for Complementary Use with the T1P3055 Series • 90 W at 25°C Case Temperature • 15 A Continuous Collector Current SOT-93 PAC KAG E


    OCR Scan     		PDF TIP2955 TIP3055 OT-93 transistor sc 1972 TIP2955 NPN power transistor transistor PNP TIP2955 texas instruments tip3055

    nec 13772

    Abstract: transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5182 NPS EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PAC KAG E DIMENSIONS • Low noise • NF = 1.3 dB ty p . @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB ty p


    OCR Scan     		PDF 2SC5182 SC-59 2SC5182-T1 2SC5182-T2 nec 13772 transistor NEC b 882 transistor NEC D 882 p nec d 882 p transistor transistor transistor NEC b 882 p nec 0882 p 2 sem 2107 71/MT 6351 bm 71/71/MT 6351 bm

    2SC2690

    Abstract: 2SC2690A A1220A 2SA1220 2SA1220A
    Text: NPN SILICON POWER TRANSISTORS 2SC2690,2SC2690A D ESC R IP TIO N The 2SC 2690, 2SC 2690A are general purpose transistors design­ PAC KAG E D IM E N S IO N S ed for use in audio and radio frequency power amplifiers. FEATURES in millimeters inches 8.5 MAX.


    OCR Scan     		PDF 2SC2690 2SC2690A 2SC2690, 2SC2690A A1220A 2SA1220 2SA1220A

    2SK784

    Abstract: S300
    Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTIO N 2SK784 The 2SK784 is N-channel MOS Field E ffect Power Transistor PAC KAG E DIM EN SIO N S designed fo r sw itching power supplies DC-DC converters. FEATUR ES in m illim e te rs inches


    OCR Scan     		PDF 2SK784 2SK784 RS39726 1987M S300

    2SK163

    Abstract: 2sk163 transistor nec 2sk163 2sk163 nec transistor 2sk163 2SK163 equivalent "2SK163"
    Text: NEC N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR ELECTRON DEVICE D ESCRIPTIO N 2SK163 The 2SK163 is designed fo r use in the firs t stage fo r A F Low Noise am plifier. PAC KAG E DIM EN SIO N S in millimeters inches FEA TU R E S • Low Equivalent Noise Voltage.


    OCR Scan     		PDF 2SK163 2SK163 2sk163 transistor nec 2sk163 2sk163 nec transistor 2sk163 2SK163 equivalent "2SK163"

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK701 D ESC R IPTIO N FEATU RES The 2SK701 is N-Channel MOS Field Effect Power Tran­ sistor designed for solenoid, motor and lamp driver. PA C KAG E DIM EN SIO NS in millimeter* inches • 4 V Gate Drive - Logic level •


    OCR Scan     		PDF 2SK701 2SK701

    2SJ139

    Abstract: 2SJ139,J139
    Text: NEC P-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE DESCRIPTION 2SJ139 The 2SJ139 is P-Channel MOS Field E ffect Power Transistor PAC KAG E D IM EN SIO N S designed fo r solenoid, m o to r and lamp driver. FEATURES • 4 V Gate Drive — Logic level —


    OCR Scan     		PDF 2SJ139 2SJ139 1987M 2SJ139,J139

    mpsa65

    Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30


    OCR Scan     		PDF GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 mpsa65 MPSA20

    tl700

    Abstract: 2SC2001 transistor 2sc2001
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE DESCR IPTIO N 2SC2001 The 2SC2001 is designed fo r use in o u tp u t stage o f portable PAC KAG E D IM E N S IO N S R A D IO and cassette type tape recorder, general purpose applica­ in m illim e te rs inches tions.


    OCR Scan     		PDF 2SC2001 2SC2001 tl700 transistor 2sc2001

    KAG TRANSISTOR

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES SM A LL PAC KAG E STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 - LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz HIGH G AIN BANDW IDTH: fr = 9 GHz


    OCR Scan     		PDF NE688 UPA809T UPA809T UPA809T-T1 KAG TRANSISTOR

    diode ssil

    Abstract: 2SD1939 PA33 dumper diode KAG TRANSISTOR
    Text: NEC NPN SILICON DARLINGTON TRANSISTOR 2SD1939 D E S C R IP TIO N The 2SD 1939 is a darlington transistor including a dumper diode PAC KAG E D IM E N S IO N S at E-C . in m illim èters inches It is suitable fo r general driving use, such as hammer, solenoid,


    OCR Scan     		PDF 2SD1939 2SD1939 diode ssil PA33 dumper diode KAG TRANSISTOR

    D794A

    Abstract: d794 2SD794A 2SB744 2SB744A 2SD794 2SB744 NEC IC HE 06 R
    Text: NPN SILICON POWER TRANSISTORS 2SD794,2SD794A D E S C R IP TIO N The 2S D 794, 2S D 794A is an NPN general purpose transistor PAC KAG E D IM E N S IO N S designed for use in Audio frequency amplifier. in millimeters inches FE A T U R E S 8.5 MAX. (0.334 MAX.)


    OCR Scan     		PDF 2SD794 2SD794A 2SD794, 2SD794A 2SB744, 2SB744A D794A d794 2SB744 2SB744 NEC IC HE 06 R

    2SB772

    Abstract: 2SB77
    Text: PNP SILICON POWER TRANSISTOR 2SB772 D E S C R IP T IO N The 2SB772 is PNP silicon transistor suited for the output PAC KAG E D IM E N S IO N S stage of 3 watts audio am plifier, voltage regulator, DC-DC con­ in millimeters inches verter and relay driver.


    OCR Scan     		PDF 2SB772 2SB772 2SB77

    MV2107

    Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
    Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.


    OCR Scan     		PDF MV21XX MMBV21XXLT1 1MV21 40Vdc n/MV2109 MV2107 MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1

    2SC2757

    Abstract: 2SC2757-R
    Text: NEC SILICON TRANSISTORS ElECTRON DEVICE 2 S C 2 7 5 7 ,2 S C 2 7 5 7 R UHF/VHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTIO N PAC KAG E DIM EN SIO N S The 2SC2757, 2SC2757R are NPN silicon epitaxial transistor intended fo r in millimeters inches


    OCR Scan     		PDF 2SC2757 2SC2757R 2SC2757, 2SC2757R 100MHz 2SC2757 2SC2757-R

    2SC3840

    Abstract: No abstract text available
    Text: NPN SILICON POWER TRANSISTOR 2SC3840 D E S C R IP T IO N The 2SC 3840 is designed fo r use in high speed and high voltage. PAC KAG E D IM E N S IO N S It is suitable fo r switching regulators, DC-DC converters and in m illim ete rs inches ultrasonic appliance applications.


    OCR Scan     		PDF 2SC3840 2SC3840

    2SA1175

    Abstract: TRANSISTOR 2SA1175 2SC2785 HFG TRANSISTOR
    Text: NEC PNP SILICON TRANSISTOR 2 S A 1 175 D E S C R IP TIO N The 2S A 1 175 is designed for use in driver stage of A F amplifier. PAC KAG E D IM E N S IO N S in millimeters inches FEATURES • High hpE and excellent linearity 2.2 M AX. (0.086 M AX.) 4.2 M AX.


    OCR Scan     		PDF 2SA1175 10kH7 2SA1175 TRANSISTOR 2SA1175 2SC2785 HFG TRANSISTOR

    Transistor 2sC1674

    Abstract: 2SC1674 PA33 VCE-60
    Text: NPN SILICON TRANSISTOR 2SC1674 D E S C R IP TIO N The 2SC1674 is designed for use in FM RF amplifier and PAC KAG E D IM E N S IO N S local oscillator of FM tuner. in millimeters inches 5.2 M A X .' • High gain bandwidth product (f-j-= 6 0 0 M H z T Y P .


    OCR Scan     		PDF 2SC1674 2SC1674 Transistor 2sC1674 PA33 VCE-60