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onsemi MPSA14 TRANS NPN DARL 30V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA14	Bulk			15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Farnell	MPSA14	Each		13 Weeks, 1 Days	1	1 £0.2 10 £0.2 100 £0.2 1000 £0.2 10000 £0.2	Buy Now
ComSIT Europe	MPSA14		6,566			1 - 10 - 100 - 1000 - 10000 -	Get Quote
onsemi MPSA14G TRANS NPN DARL 30V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA14G	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components MPSA14-AP TRANS NPN DARL 30V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA14-AP	Ammo Pack				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Quest Components	MPSA14-AP		5,908			1 $0.522 10 $0.522 100 $0.522 1000 $0.1566 10000 $0.1044	Buy Now
	MPSA14-AP		5,908			1 $0.522 10 $0.522 100 $0.522 1000 $0.1566 10000 $0.1044	Buy Now
Bristol Electronics	MPSA14-AP		7,386			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Micro Commercial Components MPSA14-BP TRANS NPN DARL 30V 0.5A TO92
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA14-BP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NXP Semiconductors MPSA14,116 TRANS NPN DARL 30V 0.5A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MPSA14,116	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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MPSA14 Datasheets (78)

Part	Manufacturer	Description	Datasheet Type	PDF
MPSA14	Central Semiconductor	Leaded Small Signal Transistor Darlington	Original	PDF
MPSA14	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
MPSA14	Fairchild Semiconductor	NPN Darlington Transistor	Original	PDF
MPSA14	General Semiconductor	Darlington Bipolar Transistor, NPN, 30V at Tc=25C, TO-92, 3-Pin	Original	PDF
MPSA14	Korea Electronics	TRANS DARLINGTON NPN 30V 0.5A 3TO-92	Original	PDF
MPSA14	Micro Commercial Components	TRANS DARLINGTON BJT NPN 30V 0.5A 3TO-92	Original	PDF
MPSA14	Micro Commercial Components	NPN Silicon Darlington Transistor	Original	PDF
MPSA14	Motorola	DARLINGTON TRANSISTORS	Original	PDF
MPSA14	NXP Semiconductors	NPN Darlington transistor	Original	PDF
MPSA14	On Semiconductor	Darlington Transistors NPN	Original	PDF
MPSA14	Philips Semiconductors	Small-signal Transistors	Original	PDF
MPSA14	Philips Semiconductors	NPN Darlington transistor	Original	PDF
MPSA14	Siemens	Cross Reference Guide 1998	Original	PDF
MPSA14	Sinyork	Mini size of Discrete semiconductor elements	Original	PDF

MPSA14	Vishay Telefunken	TRANS DARLINGTON NPN 30V 0.5A 3TO-92	Original	PDF
MPSA14	Weitron	Plastic-Encapsulate Transistros NPN Darlington Transistor	Original	PDF
MPSA14	Central Semiconductor	Darlington Bipolar Transistor, NPN, 60V, TO-92, 3-Pin	Scan	PDF
MPS-A14	Central Semiconductor	SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY)	Scan	PDF
MPSA14	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
MPSA14	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF

MPSA14 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N5306 Abstract: F63TNR MPSA14 PN2222N CBVK741B019 Text: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5306 MPSA14 2N5306 F63TNR PN2222N CBVK741B019
Untitled Abstract: No abstract text available Text: TN6725A C B TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	TN6725A O-226 MPSA14
Untitled Abstract: No abstract text available Text: MPSA13/MPSA14 Plastic-Encapsulate Transistros NPN Darlington Transistor * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 TO-92 Maximum Ratings(T =25 C Unless O therwise Specified) A Rating Symbol Value Unit Collector-Emitter Voltage VCEO 30 V	Original	PDF	MPSA13/MPSA14 17-Jun-05 270TYP
equivalent mpsa14 Abstract: PR05 MMBTA14 MPSA14 PZTA14 Text: MPSA14 MMBTA14 PZTA14 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings*	Original	PDF	MPSA14 MMBTA14 PZTA14 OT-23 OT-223 MPSA14 MMBTA14 equivalent mpsa14 PR05 PZTA14
transistor mpsa 250 Abstract: transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14 Text: MPSA13 MPSA14 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA Collector-base Voltage 30V Operating and storage junction temperature range: -55OC to +150 OC	Original	PDF	MPSA13 MPSA14 500mA -55OC transistor mpsa 250 transistor mpsa 13 equivalent mpsa14 MPSA13 MPSA14
MW MARK Abstract: MMBTA13 MPSA14 Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector	Original	PDF	MMBTA13 MPSA14 OT-23 MMBTA13 MW MARK
2N5308 Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247 Text: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N5308 MPSA14 2N5308 PN2222N TO5 package D9842 F63TNR CBVK741B019 PN222N D74z transistor k 0247
MPSA14 Abstract: transistor 625 Text: UTC MPSA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA14 is a Darlington transistor. 1 FEATURES Collector-Emitter Voltage: VCES = 30V Collector Dissipation: Pc mas = 625 mW SOT-89 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified.)	Original	PDF	MPSA14 OT-89 100mA 100mA 100MHz QW-R208-008 transistor 625
MPSA13 Abstract: equivalent mpsa14 MMBTA13 MPSA14 PZTA13 Text: MMBTA13 PZTA13 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 1M NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.	Original	PDF	MMBTA13 PZTA13 OT-23 OT-223 MPSA14 MPSA13 equivalent mpsa14 MMBTA13 PZTA13
TN6725A Abstract: equivalent mpsa14 MPSA14 "Darlington Transistor" Text: TN6725A CB TO-226 E NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	TN6725A O-226 MPSA14 TN6725A equivalent mpsa14 "Darlington Transistor"
Untitled Abstract: No abstract text available Text: 2N6426 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	PDF	2N6426 MPSA14
MPSA14M Abstract: No abstract text available Text: MCC TM Micro Commercial Components MPSA13 MPSA14 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA	Original	PDF	MPSA13 MPSA14 500mA -55OC MPSA13--MPSA13 MPSA14--MPSA14. MPSA14M
MPSA14 Abstract: MPSA64 SC-43A darlington transistor MPSA14 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 MPSA14 NPN Darlington transistor Product specification Supersedes data of 2004 Aug 20 2005 May 04 Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA	Original	PDF	M3D186 MPSA14 MPSA64. MAM252 SCA76 R75/07/pp6 MPSA14 MPSA64 SC-43A darlington transistor MPSA14
Untitled Abstract: No abstract text available Text: MMBTA13 NPN Darlington Transistor • This device is designed for applications requiring extremely high Current gain at collector Currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. 3 2 1 SOT-23 Mark: 1M 1. Base 2. Emitter 3. Collector	Original	PDF	MMBTA13 MPSA14 OT-23 MMBTA13

equivalent mpsa14 Abstract: MPSa14 equivalent MPSA14 Text: DC COMPONENTS CO., LTD. MPSA14 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter 2 = Base 3 = Collector	Original	PDF	MPSA14 100mA, 100MHz equivalent mpsa14 MPSa14 equivalent MPSA14
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components MPSA13 MPSA14 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Capable of 1.5Watts of Power Dissipation. Collector-current 500mA	Original	PDF	MPSA13 MPSA14 500mA -55OC MPSA13--MPSA13 MPSA14--MPSA14.
2N4123 pnp silicon Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50	OCR Scan	PDF	GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 2N4123 pnp silicon 2N4401 520
mpsa13 636 Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE bTE D • bh53T31 QQ26Q13 flTfl H A P X MPSA13 MPSA14 SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS N-P-N silicon planar epitaxial darlington transistors in plastic TO-92 envelope for general purpose applications. QUICK REFERENCE DATA	OCR Scan	PDF	bh53T31 QQ26Q13 MPSA13 MPSA14 100pA mpsa13 636
MPSA13 Abstract: MPSA12 MPSA14 mpsa13 central Text: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors	OCR Scan	PDF	MPSA12 MPSA13 MPSA14 T0-92 MPSA12 MPSA14 MPSA13 mpsa13 central
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification NPN Darlington transistor MPSA14 FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 collector • High DC current gain (min. 10000). 2 base 3 em itter APPLICATIONS • High gain am plification.	OCR Scan	PDF	MPSA14 MPSA64. SC-43
mpsa13 Abstract: mps-a13 mpsa14 Text: Philips Semiconductors Product specification NPN Darlington transistors FEATURES MPSA13; MPSA14 PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 30 V) 1 • High DC current gain (min. 10000). 2 base 3 em itter collector APPLICATIONS	OCR Scan	PDF	MPSA13; MPSA14 PSA63 MPSA64. MPSA13 PSA14 mps-a13 mpsa14
MPSa14 equivalent Abstract: mpsa13 equivalent mpsa14 MPSa13 equivalent MPS-A13 PSA13 Text: TOSHIBA DARLINGTON TRANSISTOR M PSA13,14 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR PRINTER DRIVE, CORE DRIVE AND LED DRIVE APPLICATIONS. FEATURE: High DC Current Gain @ Ic=100mA MPSA13 hFE=10,000 Min. MPSA14 hFE=20,000 Min. 1. EMITTER 2. BASE a COLLECTOR	OCR Scan	PDF	PSA13 MPSA13 MPSA14 100mA MPS-A13) Ic-10mA MPS-A14) 100mA MPSa14 equivalent equivalent mpsa14 MPSa13 equivalent MPS-A13
2n3904 2n3906 Abstract: 2SC1815 2SA1015 2SC1815 2SA1015 Text: SIGNAL TRANSISTORS SM ALL SIGNAL TRANSISTOR Type No. TO-92 2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2N5401 2N5550 2N5551 MPS2222 MPS2222A MPS2907 MPS2907A MPSA05 MPSA06 MPSA13 MPSA14 MPSA42 MPSA43 MPSA55 MPSA56 MPSA62 MPSA63 MPSA64	OCR Scan	PDF	2N3904 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N4401 2N4403 2N5400 2n3904 2n3906 2SC1815 2SA1015 2SC1815 2SA1015
Untitled Abstract: No abstract text available Text: SAMSUNG SEMICONDUCTOR INC IME 0 § 7tì t m 4 2 0 00 73 50 7 \| NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA14 T-29-29 DARLINGTON TRANSISTOR TO-92 • Collector-Emttter Voltage: Vct»= 30V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS	OCR Scan	PDF	MPSA14 T-29-29 625mW 2N6427

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MPSA14 Price and Stock

onsemi MPSA14

onsemi MPSA14G

Micro Commercial Components MPSA14-AP

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NXP Semiconductors MPSA14,116

MPSA14 Datasheets (78)

MPSA14 Datasheets Context Search

2N5306

Untitled

Untitled

equivalent mpsa14

transistor mpsa 250

MW MARK

2N5308

MPSA14

MPSA13

TN6725A

Untitled

MPSA14M

MPSA14

Untitled

equivalent mpsa14

Untitled

2N4123 pnp silicon

mpsa13 636

MPSA13

Untitled

mpsa13

MPSa14 equivalent

2n3904 2n3906

Untitled