NE688 Search Results

NE688 Price and Stock

Filter by Manufacturer


California Eastern Laboratories (CEL) NE68830-A RF TRANS NPN 6V 4.5GHZ SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE68830-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE68819-A RF TRANS NPN 6V 5GHZ 3SMINIMOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE68819-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE68833-A RF TRANS NPN 6V 4.5GHZ SOT23
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE68833-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE68819-T1 RF TRANS NPN 6V 5GHZ 3SMINIMOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE68819-T1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
California Eastern Laboratories (CEL) NE68830-T1-A RF TRANS NPN 6V 4.5GHZ SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NE68830-T1-A	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

Find more NE688 price and stock on Findchips.com

NE688 Datasheets (39)

Part	Manufacturer	Description	Datasheet Type	PDF
NE688	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68800	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68800	NEC	NECs NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68818	NEC	Semiconductor Selection Guide	Original	PDF
NE68818	NEC	NPN Silicon Transistor.	Original	PDF
NE68818-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68818-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68818-T1-A	California Eastern Laboratories	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68819	Unknown		Original	PDF
NE68819	NEC	Semiconductor Selection Guide	Original	PDF
NE68819	NEC	NPN Silicon Transistor.	Original	PDF
NE68819-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ MINIMOLD	Original	PDF
NE68819-T1	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ SMD	Original	PDF
NE68819-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

NE68819-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68819-T1-A	California Eastern Laboratories	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF
NE68830	NEC	Semiconductor Selection Guide	Original	PDF
NE68830	NEC	NPN Silicon Transistor.	Original	PDF
NE68830-A	California Eastern Laboratories	RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ SOT-323	Original	PDF
NE68830-T1	NEC	SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR	Original	PDF

NE688 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1	Original	PDF	NE68808 8e-16 8e-15 5e-16 8e-12 55e-12 11e-12 5e-14 29e-12
NEC 1357 Abstract: No abstract text available Text: NONLINEAR MODEL Q1 CCBPKG SCHEMATIC NE68833 CCB LCX LBX Collector LB Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL Parameters Q1 PARAMETERS 1 Parameters Q1 UNITS Parameter Units time seconds farads IS 3.8e-16 MJC 0.48 capacitance BF 135.7 XCJC	Original	PDF	NE68833 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12 NEC 1357
NE688 Abstract: S21E UPA814T UPA814T-T1 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1
2SC5651 Abstract: NE688 NE688M23 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height	Original	PDF	NE688M23 NE688M23 24-Hour 2SC5651 NE688 S21E
32E-12 Abstract: 32e12 35E16 Text: NONLINEAR MODEL SCHEMATIC NE688M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries	Original	PDF	NE688M03 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 688M03 32e12 35E16
S21E Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
bjt microwave GHz Abstract: BJT IC Vce 38E-16 Text: NE68800 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds BF 135.7 XCJC 0.56 capacitance farads henries NF 1 CJS inductance VAF 28 VJS 0.75 resistance	Original	PDF	NE68800 8e-16 8e-15 5e-16 796e-12 549e-12 0e-12 032e-9 24e-12 27e-12 bjt microwave GHz BJT IC Vce 38E-16
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE68818 SCHEMATIC CCBPKG CCB LCX LBX LB Collector LC CCE Base CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 0.56 BF 135.7 XCJC NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15	Original	PDF	NE68818 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12
8003* transistor Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz	Original	PDF	UPA814T NE688 UPA814T UPA814T-T1, 24-Hour 8003* transistor UPA814T-T1 S21E transistor C 110 transistor f 20 nf
NE68830-T1-A Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	PDF	NE688 NE688 NE68830-T1-A 2SC5193 2SC5194 2SC5195 NE68818 NE68819 NE68830 NE68833 131300
NE68819 Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	PDF	NE688 NE688 NE68833-T1 NE68839-T1 NE68839R-T1 NE68819 ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE68818 NE68830
BJT BF 331 Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	PDF	NE688 NE688 NE68800 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 BJT BF 331 NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195
NE688M13 Abstract: EIAJ 2SC5616 NE688 S21E Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS Units in mm FEATURES • • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –	Original	PDF	NE688M13 NE688M13 24-Hour EIAJ 2SC5616 NE688 S21E
NE688 Abstract: S21E UPA814T UPA814T-T1 UPA814T-T1-A Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA814T NE688 UPA814T S21E UPA814T-T1 UPA814T-T1-A

2SC5437 Abstract: NE688 NE688M03 S21E 15E14 Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03	Original	PDF	NE688M03 NE688M03 2SC5437 NE688 S21E 15E14
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA	Original	PDF	UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour
BR 123 Abstract: NE68819 03E-12 Text: NONLINEAR MODEL SCHEMATIC CCBPKG 0.08 pF NE68819 Q1 CCB LBX LCX 0.24 pF LB CCE 0.27 pF Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LE 0.6 nH 0.5 nH Collector CCEPKG 0.3 pF LEX 0.19 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter	Original	PDF	NE68819 8e-16 8e-15 0e-12 24e-12 27e-12 12e-9 08e-12 3e-12 BR 123 NE68819 03E-12
LB 1639 Abstract: C 4804 transistor Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE	Original	PDF	NE688 8839R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 LB 1639 C 4804 transistor
Vo 80500 TRANSISTOR Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A	OCR Scan	PDF	NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
NEC 1357 Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357 Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	PDF	NE688M03 NE688M03 24-Hour NEC 1357 1357 transistor NEC nec transistor 1357 transistor NEC 1357
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 2 . 1 + 0.1 LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz -	OCR Scan	PDF	NE688 UPA814T UPA814T UPA814T-T1, 24-Hour
Untitled Abstract: No abstract text available Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ . SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package * LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: f t = 9 GHz . HIGH COLLECTOR CURRENT: 100 mA UPA809T	OCR Scan	PDF	NE688 UPA809T UPA809T UPA809T-T1 24-Hour
LM 4863 D Abstract: LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225 Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1 .5 dB at 2.0 GHz . LOW VOLTAGE OPERATION . LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER	OCR Scan	PDF	NE688 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 LM 4863 D LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225
4 ghz transistor Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance	OCR Scan	PDF	NE688M03 NE688M03 4 ghz transistor

Privacy Settings

NE688 Search Results

NE688 Price and Stock

California Eastern Laboratories (CEL) NE68830-A

California Eastern Laboratories (CEL) NE68819-A

California Eastern Laboratories (CEL) NE68833-A

California Eastern Laboratories (CEL) NE68819-T1

California Eastern Laboratories (CEL) NE68830-T1-A

NE688 Datasheets (39)

NE688 Datasheets Context Search

Untitled

NEC 1357

NE688

2SC5651

32E-12

S21E

bjt microwave GHz

Untitled

8003* transistor

NE68830-T1-A

NE68819

BJT BF 331

NE688M13

NE688

2SC5437

Untitled

BR 123

LB 1639

Vo 80500 TRANSISTOR

NEC 1357

Untitled

Untitled

LM 4863 D

4 ghz transistor