BUV27AF Search Results

BUV27AF Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
BUV27AF		Philips Semiconductors	Silicon Diffused Power Transistor		Original	PDF
BUV27AF		Unknown	Shortform Data and Cross References (Misc Datasheets)		Short Form	PDF

BUV27AF Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUV27AF Abstract: BUV27F Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUV27F/AF DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 120V(Min)- BUV27F 150V(Min)- BUV27AF ·High Switching Speed APPLICATIONS ·Designed for fast switching applications such as high	Original	PDF	BUV27F/AF BUV27F BUV27AF IB27AF BUV27AF BUV27F
D0310 Abstract: BUV27AF BUV27F L100 A10q 27af Text: _ 711QäBfci liU □ Cb D0310ñS T D P H I N I I PHILIPS INTERNATIONAL MSE ]> O BUV27F BUV27AF J l T -3 3 -0 7 SILICON DIFFUSED POWER TRANSISTORS H igh-voltage, high-speed, glass-passivated npn p o w er transistor in a S O T 1 8 6 envelope w ith electrically	OCR Scan	PDF	D0310flS BUV27F BUV27AF OT186 T-33-07 7z94453 D0310 BUV27AF L100 A10q 27af
V27AF Abstract: No abstract text available Text: PHILIPS INTERNATIONAL mse: » 7 iiQasb 0031005 t b IPHIN BUV27F BUV27AF o SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope with electrically isolated mounting base, intended for use in converters, inverters, switching regulators, motor control	OCR Scan	PDF	BUV27F BUV27AF OT186 OT186. 711GflBh 0G310TD T-33-07 V27AF
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE ^ 5 3 ^ 3 1 D02fl4b4 TT3 I IAPX BUV27F BUV27AF b'lE D SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope w ith electrically isolated mounting base, intended fo r use in converters, inverters, switching regulators, m otor control	OCR Scan	PDF	D02fl4b4 BUV27F BUV27AF OT186
z9s21 Abstract: BUV27AF BUV27F 27af BU100 Text: N AMER PHILIPS/DISCRETE bTE » • bbSB^l DD2flMbM ‘ì'ìa HIAPX BUV27F BUV27AF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn pow er transistor in a S O T 1 8 6 envelope w ith electrically isolated m ounting base, intended fo r use in converters, inverters, switching regulators, m o to r control	OCR Scan	PDF	bb53131 BUV27F BUV27AF OT186 BUV27F z9s21 BUV27AF 27af BU100
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	PDF	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
BGY41 Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.	OCR Scan	PDF	LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
FET BFW10 Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11 Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI	OCR Scan	PDF	BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11