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    A10Q Search Results

    A10Q Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TL4050A10QDBZR Texas Instruments Precision micropower shunt voltage reference 3-SOT-23 -40 to 125 Visit Texas Instruments Buy
    TPL0401A-10QDCKRQ1 Texas Instruments Automotive 128-Taps Single-Channel Digital Potentiometer With I2C Interface 6-SC70 -40 to 125 Visit Texas Instruments Buy
    PRES11A10QDDFRQ1 Texas Instruments Automotive low-noise matched thin-film resistor divider network with 1kΩ fixed input 8-SOT-23-THIN -40 to 125 Visit Texas Instruments
    TL4050A10QDCKR Texas Instruments Precision micropower shunt voltage reference 5-SC70 -40 to 125 Visit Texas Instruments Buy
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    A10Q Price and Stock

    Texas Instruments TPL0401A-10QDCKRQ1

    IC DGTL POT 10KOHM 128TAP SC70-6
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    DigiKey TPL0401A-10QDCKRQ1 Digi-Reel 29,472 1
    • 1 $1.6
    • 10 $1.17
    • 100 $0.9446
    • 1000 $0.82642
    • 10000 $0.82642
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    TPL0401A-10QDCKRQ1 Cut Tape 29,472 1
    • 1 $1.6
    • 10 $1.17
    • 100 $0.9446
    • 1000 $0.82642
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    TPL0401A-10QDCKRQ1 Reel 15,000 3,000
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    • 10000 $0.71375
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    Mouser Electronics TPL0401A-10QDCKRQ1 7,970
    • 1 $1.33
    • 10 $0.898
    • 100 $0.839
    • 1000 $0.783
    • 10000 $0.686
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    Bristol Electronics TPL0401A-10QDCKRQ1 25 4
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    Chip1Stop TPL0401A-10QDCKRQ1 Cut Tape 2,945
    • 1 $0.732
    • 10 $0.648
    • 100 $0.645
    • 1000 $0.631
    • 10000 $0.628
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    Kingbright WP710A10QBC-D

    LED BLUE CLEAR T-1 T/H
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    DigiKey WP710A10QBC-D Bulk 21,742 1
    • 1 $0.43
    • 10 $0.263
    • 100 $0.43
    • 1000 $0.11817
    • 10000 $0.09191
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    Nexperia BZX384-A10-QX

    BZX384-A10-Q/SOD323/SOD2
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    DigiKey BZX384-A10-QX Cut Tape 4,932 1
    • 1 $0.5
    • 10 $0.333
    • 100 $0.5
    • 1000 $0.15984
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    BZX384-A10-QX Digi-Reel 4,932 1
    • 1 $0.5
    • 10 $0.333
    • 100 $0.5
    • 1000 $0.15984
    • 10000 $0.15984
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    BZX384-A10-QX Reel 3,000 3,000
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    Avnet Americas BZX384-A10-QX Reel 6 Weeks 6,000
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    • 10000 $0.15664
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    Mouser Electronics BZX384-A10-QX 4,070
    • 1 $0.49
    • 10 $0.333
    • 100 $0.226
    • 1000 $0.16
    • 10000 $0.113
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    TTI BZX384-A10-QX Reel 6,000
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    Avnet Silica BZX384-A10-QX 8 Weeks 3,000
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    EBV Elektronik BZX384-A10-QX 8 Weeks 3,000
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    Texas Instruments TL4050A10QDCKR

    IC VREF SHUNT 0.1% SC70-5
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    DigiKey TL4050A10QDCKR Cut Tape 2,943 1
    • 1 $2.63
    • 10 $1.957
    • 100 $1.6047
    • 1000 $1.42024
    • 10000 $1.42024
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    TL4050A10QDCKR Digi-Reel 2,943 1
    • 1 $2.63
    • 10 $1.957
    • 100 $1.6047
    • 1000 $1.42024
    • 10000 $1.42024
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    TL4050A10QDCKR Reel 3,000
    • 1 -
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    • 10000 $1.34002
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    Mouser Electronics TL4050A10QDCKR 2,396
    • 1 $2.63
    • 10 $1.79
    • 100 $1.61
    • 1000 $1.43
    • 10000 $1.25
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    Rochester Electronics TL4050A10QDCKR 12,000 1
    • 1 $1.39
    • 10 $1.39
    • 100 $1.31
    • 1000 $1.18
    • 10000 $1.18
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    TME TL4050A10QDCKR 1
    • 1 $2.71
    • 10 $2.44
    • 100 $1.94
    • 1000 $1.74
    • 10000 $1.61
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    Kingbright WP710A10QBD-D

    LED BLUE DIFFUSED T-1 T/H
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey WP710A10QBD-D Bulk 1,292 1
    • 1 $0.51
    • 10 $0.315
    • 100 $0.51
    • 1000 $0.1418
    • 10000 $0.11817
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    Find more A10Q price and stock on Findchips.com

    A10Q Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description Uni-directional Bi-directional The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF E128662 DO-214AA 12mm/13â RS-481

    n10u

    Abstract: N10H A10N A10y 1KSMB10A 1KSMB11A 1KSMB12A 1KSMB75CA n10g 1KSMB33A
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W RoHS 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF E128662 1000s DO-214AA n10u N10H A10N A10y 1KSMB10A 1KSMB11A 1KSMB12A 1KSMB75CA n10g 1KSMB33A

    3y73

    Abstract: No abstract text available
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series 1KSMB Series Description The 1KSMB series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF MBNNBCJMJUZ70 1000s 1KSMBYYY99 3y73

    N10Y

    Abstract: B10F n10Z n10u
    Text: Transient Voltage Suppression Diodes Surface Mount – 1000W > 1KSMB series RoHS Pb Description The 1KSMB series is designed speciically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.


    Original     		PDF DO-214AA 12mm/13â RS-481 N10Y B10F n10Z n10u

    NCC equivalent

    Abstract: No abstract text available
    Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors


    OCR Scan     		PDF TMS29F400T, TMS29F400B 8-BIT/262144 16-BIT SMJS843A 44-Pin 48-Pin 8-Blf/262144 NCC equivalent

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT JS851A-NO 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80

    KM44C4100BK

    Abstract: No abstract text available
    Text: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		PDF 16Mx4, 512Kx8) KM44C4100BK KM44C4100BK

    ALY 34

    Abstract: 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34
    Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES S M JS 851A - N O VEM BER 1997 - REVISED M ARCH 1998 Organization . . . 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy 8-BIT/524 16-BIT SMJS851A 96K-Byte/48K-Word 128K-Byte/64K-Word 16K-Byte/8K-Word 28F008Axy70 28F008Axy80 ALY 34 28f800 TMS2800 R-PDSO-G44 Package A10q ALY-34

    KM44V4100BS

    Abstract: Oi24 A10QZ
    Text: KM44V4100BS CMOS DRAM ELECTR ONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		PDF KM44V4100BS 16Mx4, 512Kx8) b414E 7Tb4142 KM44V4100BS Oi24 A10QZ

    A10q

    Abstract: HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8
    Text: blE D • HMTbSGB DD23 351 E7M ■ H I T 2 H M 511 6 4 0 0 S e r i e s - HITACHI/ LOGIC/ARRAYS/MEM 4,194,304-w ord x 4-bit D ynam ic R andom A c c e s s Memory The H itachi H M 5116400 is a CMOS dynamic RAM organized 4,194,304 w ords x 4 bits. It employs the most advanced CMOS technology for


    OCR Scan     		PDF DD23351 HM5116400 304-word mW/385 mW/358 16-bit mo400 M4Tb203 A10q HM5116400Z-6 ice power 200 asc HM5116400Z HM5116400TT-7 CSR BLE HM5116400Z8

    EL 817 C205

    Abstract: Trident cyber 9525 HC sr05 ci tl594 RN600 RESISTOR TC299 UPS A1000 M36N1 trident vga TRIDENT CYBER
    Text: Model : A1000 Mobile Pentium III with Banister Chipset Revision History A 04/05/2000 B 05/15/2000 ORIGINAL RELEASE PageOl Page02 Page03 Page04 Page05 Page06 Page07 Page08 Page09 PagelO Pagel1 Pagel2 Pagel3 Pagel4 Pagel5 Pagel 6 Pagel7 Pagel8 Pagel9 Page20


    OCR Scan     		PDF A1000 Page02 Page03 Page04 Page05 Page06 Page07 Page08 Page09 Page20 EL 817 C205 Trident cyber 9525 HC sr05 ci tl594 RN600 RESISTOR TC299 UPS A1000 M36N1 trident vga TRIDENT CYBER

    Untitled

    Abstract: No abstract text available
    Text: KM41C16002A CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package


    OCR Scan     		PDF KM41C16002A 16Mx1Bit 16Mx1

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R w w w .fairchildsem i.com tm RC5031 A d j u s t a b l e S w i t c h i n g Regul at or Description • High power switched-mode DC-DC controller can source in excess of 13A • Output voltage adjustable from 1.5V to 3.6V • 85% efficiency


    OCR Scan     		PDF RC5031 RC5031 DS30005031

    ATINY 12

    Abstract: No abstract text available
    Text: r r u n TECHNOLOGY FEATURES • UL Recognized T O LTC694-3.3/LTC695-3.3 m 3.3V Microprocessor Supervisory Circuits DESCRIPTlOn File # E145770 The LTC 694-3.3/LTC695-3.3 provide complete 3.3V ■ Guaranteed Reset Assertion at Vqc = 1V power supply monitoring and battery control functions.


    OCR Scan     		PDF E145770 LTC694-3 3/LTC695-3 LTC694/ LTC695 3/LTC695-escribed ATINY 12

    HY5117400A

    Abstract: A1D10 HY5117400AJ60 HY5117400AJ 1AD27-10-MA HY5117400 AMO 0210 OH371
    Text: HY5117400A Series • H Y U N D A I 4M 4-bit CMOS DRAM X DESCRIPTION The HY5117400A is the new generation and fast dynam ic RAM organized 4,194,304 x 4-bit. T he HY5117400A utilizes Hyundai’s CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5117400A HY5117400A Y5117400A 1AD27-10-MA HY5117400AJ HY5117400ASLJ HY5117400AT HY5117400ASLT A1D10 HY5117400AJ60 HY5117400 AMO 0210 OH371

    Untitled

    Abstract: No abstract text available
    Text: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It


    OCR Scan     		PDF 216-w HM5116100J-6 HM5116100J-7 HM5116100J-8 400-mil 24/28-pin CP-24DA) HM5116100Z-6 HM51161002-7 HM5116100Z-8

    Untitled

    Abstract: No abstract text available
    Text: M O T O RO LA SEMICONDUCTOR TECHNICAL DATA Advance Information MC74LCX16543 Low-Voltage CMOS 16-Bit Latching Transceiver LCX With 5V-Tolerant Inputs and Outputs 3-State, Non-Inverting The MC74LCX16543 is a high performance, non-inverting 16-bit latching transceiver operating from a 2.7 to 3.6V supply. The device is


    OCR Scan     		PDF MC74LCX16543 16-Bit MC74LCX16543 16-bit 500ns 500i2 BR1339

    Untitled

    Abstract: No abstract text available
    Text: TMS28F004Axy, TMS28F400Axy 52 42 88 BY 8-B IT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SMJS829A - JANUARY 1996 - REVISED AUGUST 1997 • Organization . . . 524288 By 8 Bits 262144 By 16 Bits • Array-Blocking Architecture - One 16K-Byte Protected Boot Block


    OCR Scan     		PDF TMS28F004Axy, TMS28F400Axy IT/262144 16-BIT SMJS829A 16K-Byte 96K-Byte 128K-Byte 28F400Axy

    Untitled

    Abstract: No abstract text available
    Text: TMS28F008Axy TMS28F800Axy 8 3 8 8 6 0 8 BOOT-BLOCK FLASH MEMORIES _ * * 1048576 By 8 Bits 524288 By 16 Bits Array-Blocking Architecture - Two 8K-Byte Parameter Blocks - One 96K-Byte Main Block - Seven 128K-Byte Main Blocks - One 16K-Byte Protected Boot Block


    OCR Scan     		PDF TMS28F008Axy TMS28F800Axy SMJS851 96K-Byte 128K-Byte 16K-Byte 44-Pin 40-Pin 48-Pin 48-Ball

    a14q

    Abstract: No abstract text available
    Text: TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 1048576 BY 8-BJT/524288 BY 16-BIT BOOT-BLOCK FLASH MEMORIES • • • • • • • • Organization. . . 1048576 By 8 Bits 524288 By 16 Bits


    OCR Scan     		PDF TMS28F008SET, TMS28F008SEB, TMS28F800SET. TMS28F800SEB TMS28F008SZT, TMS28F008SZB, TMS28F800SZT, TMS28F800SZB 8-BJT/524288 16-BIT a14q

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5 1 1 6 1 0 0 S e r ie s 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100 is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5116100 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116100 fam35) 1AD01 -10-APR93 HY5116100JC HY5116100UC HY5116100TC

    8192-WORD

    Abstract: SM69CE72
    Text: SM69CE72, SMJ69CE72 8192-WORD BY 9-BIT STATIC RAMS A P R IL 1 9 8 7 - R E V I S E D M A Y 1 9 8 8 • Military Temperature Range . 125°C M Suffix • Fast Static Operation • Battery Back-Up Operation . Retention • (T O P V IE W ) A4£ 1 u A5Q 2 - 5 5 ° C to


    OCR Scan     		PDF SM69CE72, SMJ69CE72 8192-WORD 69CE72-45 A0A12 SM69CE72

    TAA 691

    Abstract: No abstract text available
    Text: HY5116400A Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116400A HY5116400A HY5116400Ato 1AD23-10-MAY94 HY5116400AJ HY5116400ASU HY5116400Ã HY5116400ASLT TAA 691

    KM44C4100BS

    Abstract: BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit
    Text: KM44C4100BS CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		PDF KM44C4100BS 34STB KM44C4100BS BC3 csr data sheet tsop 138 TSOP 173 g KM44C4100B N300N 3bm42 512Kx8 bit