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    2N6058 Price and Stock

    Microchip Technology Inc JANTX2N6058

    TRANS NPN DARL 80V 12A TO3
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    Microchip Technology Inc 2N6058

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc JAN2N6058

    TRANS NPN DARL 80V 12A TO3
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    Microchip Technology Inc JANTXV2N6058

    TRANS NPN DARL 80V 12A TO3
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    VPT Components JANTXV2N6058

    NPN POWER TRANSISTOR - Bulk (Alt: JANTXV2N6058)
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    2N6058 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6058 Comset Semiconductors Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 Microsemi TRANS DARLINGTON NPN 80V 12A 3TO-3 - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 Motorola Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 On Semiconductor DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 On Semiconductor Darlington Complementary Silicon Power Transistor Original PDF
    2N6058 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6058 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6058 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 Central Semiconductor Darlington Bipolar Transistor, NPN, 80V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6058 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6058 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6058 General Electric 12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6058 Mospec POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6058 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6058 Motorola European Master Selection Guide 1986 Scan PDF
    2N6058 Motorola Power Transistor Selection Guide Scan PDF
    2N6058 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6058 Unknown Basic Transistor and Cross Reference Specification Scan PDF

    2N6058 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6058

    Abstract: 2N6059
    Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear


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    PDF 2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059

    Untitled

    Abstract: No abstract text available
    Text: 2N6058+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.750


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    PDF 2N6058

    2n6059

    Abstract: 100 amp darlington transistors 2N6058 2n6052
    Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA


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    PDF 2N6052* 2N6058 2N6052, 2N6059 2N6059* 100 amp darlington transistors 2n6052

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
    Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —


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    PDF 2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA

    2N6058

    Abstract: 2N6059 2N5883 2N5884
    Text: SavantIC Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear


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    PDF 2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884

    Untitled

    Abstract: No abstract text available
    Text: 2N6058 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6058 O204AA) 18-Jun-02

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


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    PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224

    2n6050

    Abstract: 2n6057 2N6052
    Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


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    PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,

    Untitled

    Abstract: No abstract text available
    Text: 2N6058 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


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    PDF 2N6058 O204AA) 16-Jul-02

    transistor 725

    Abstract: 2N6058
    Text: 2N6058 80 V - Darlington Complementary NPN Selicon Power Transistor 7.25 Transisto. Page 1 of 2 Enter Your Part # Home Part Number: 2N6058 Online Store 2N6058 Diodes 80 V - Darlington Complementary N PN Selicon Power Transistors Transistor Integrated Circuits


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    PDF 2N6058 2N6058 com/2n6058 transistor 725

    2N6058

    Abstract: 2N6059
    Text: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


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    PDF 2N6058 2N6059 MIL-PRF-19500/502 1000C 2N6058 2N6059 O-204AA)

    1N5825

    Abstract: 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp
    Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • • w hFE = 3500 Typ @ IC = 5.0 Adc


    Original
    PDF 2N6052* 2N6058 2N6059* 2N6052, 2N6059 2N6052/D 1N5825 2N6052 2N6058 2N6059 MSD6100 3 pin transistor 10 amp

    2N6058

    Abstract: 2N6059 2N5883 2N5884
    Text: Inchange Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear


    Original
    PDF 2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884

    2N6059

    Abstract: 2N6058 100C 1000C
    Text: TECHNICAL DATA 2N6058 JANTX, JTXV 2N6059 JANTX, JTXV Processed per MIL-PRF-19500/502 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation 1


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    PDF 2N6058 2N6059 MIL-PRF-19500/502 1000C 2N6058 2N6059 O-204AA) 100C 1000C

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    2N6052

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


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    PDF 2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency


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    PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058

    2N6052

    Abstract: 2N6057 2N6050 2N6051 2N6058 2N6059
    Text: 2N6050,2N6051,2N6052 PNP / 2N6057, 2N6058.2N6059 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( I- = 100 mA, I- = 0 ) Collector Cutoff Current


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    PDF 2N6050 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050, 2N6057 2N6051,

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


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    PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    2N6050

    Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
    Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.


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    PDF 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


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    PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    Untitled

    Abstract: No abstract text available
    Text: 27 K a trin a Road Chelm sford, M A 01824 Tel: 978 256-3321 Fax: (978)250-1046 W eb: www.stcsemi.com A PO W ERHOUSE hFE B vceo TO-3 Â à 41 i VcE(SAT) M ax @ I c/I b (volts) M in-M ax (a m p s/vo lts) (vo lts) (a m p s) 2N6058 80 12 750- 18000 6/3 2.0 6 / .024


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    PDF 2N6058 2N6059 2N6350 2N6351 14-PtN

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


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    PDF 2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn

    wf vqe 24 d

    Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058
    Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc


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    PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052