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    2N 3055 Search Results

    2N 3055 Result Highlights (5)

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    RJP3055DPP-00#T2 Renesas Electronics Corporation Insulated-Gate Bipolar Transistors (IGBT) Visit Renesas Electronics Corporation
    2SK3055-AZ Renesas Electronics Corporation Switching N Channel MOSFET, MP-45F, /Bag Visit Renesas Electronics Corporation
    5T30553DCG8 Renesas Electronics Corporation Low Skew 1 to 4 Clock Buffer Visit Renesas Electronics Corporation
    5T30553DCGI Renesas Electronics Corporation Low Skew 1 to 4 Clock Buffer Visit Renesas Electronics Corporation
    5T30553DCGI8 Renesas Electronics Corporation Low Skew 1 to 4 Clock Buffer Visit Renesas Electronics Corporation
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    2N 3055 Price and Stock

    onsemi 2N3055G

    TRANS NPN 60V 15A TO204
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    onsemi 2N3055AG

    TRANS NPN 60V 15A TO204
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    Microchip Technology Inc 2N3055

    TRANS NPN 70V 15A TO3
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    EVVO Semiconductor 2N3055

    TRANS NPN 60V 15A TO3
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    STMicroelectronics 2N3055

    TRANS NPN 60V 15A TO3
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    2N 3055 Datasheets (239)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3055 Comset Semiconductors Epitaxial-Base NPN Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Micro Commercial Components TRANS GP BJT NPN 60V 10A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Microsemi NPN power silicon transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Motorola 15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS 115 WATTS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 On Semiconductor General Purpose Bipolar Transistor, NPN, 60V, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 On Semiconductor Complementary Silicon Power Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Semelab NPN power transistor, 100V, 15A - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 STMicroelectronics COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 STMicroelectronics Complementary power transistors Original PDF
    2N3055 STMicroelectronics Complementary power transistors Original PDF
    2N3055 STMicroelectronics TRANS GP BJT NPN 60V 15A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Transys Electronics SILICON PLANAR POWER TRANSISTORS Original PDF
    2N3055 USHA High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 USHA NPN silicon power transistor. 15 Amp, 60V, 115Watt. These devices are designed for general purpose switching and amplifier applications. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=15 / Hfe=20min / fT(Hz)=0.8M / Pwr(W)=115 Original PDF
    2N3055 Various Russian Datasheets Transistor Original PDF
    2N3055 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3055 API Electronics 15 AMPS / 20 AMPS NPN Transistors Scan PDF
    2N3055 API Electronics Short form transistor data Short Form PDF
    2N3055 API Electronics Short form transistor data Short Form PDF
    ...

    2N 3055 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: industrial power transistors 135 SILICON NPN TRANSISTORS 15 Amp TYPE NUMBERS RATED BREAKDOWN VOLTAGES 2N 3055 SOT 9201 SOT 9202 SOT 9203 SOT 9204 SOT 9205 SOT 9206 SOT 9207 SOT 9208 SOT 9209 SOT 9210 Vea 100 55 100 120 140 55 80 100 120 140 40 VeE 60 45


    Original
    PDF 1I111AX

    2n3055

    Abstract: 2N3238 2N4211 2N3667 2N3055 TO-3 2N3235 2N3236 2N3239 2N3240 2N5412
    Text: E L E C T R O N IC S , IN C . COLLECTOR CURRENT = V C E O s u s V o lts D e v ic e N o C áse v CBO V o lts 2N 3055 JA N 2N 3055 JT X 2N 3055 2N 3235 2N 3236 2N 3238 2N 3239 2N 3240 2N 3667 2N 5412 2N 5881 2N 5882 2N 6253 2N 6254 2N 6470 2N6471 2N 6472


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    PDF 2N3055 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N4211 2N3055 TO-3

    transistor Amp 3055

    Abstract: transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Device 2N 2N 2N 2N 2N 2N 2N 2N 2N 2N Ic VCE0 SUS Amp Volts hFE@


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    PDF 625ghted O-237 transistor Amp 3055 transistor 2N 3055 TRANSISTOR bd 181 bdw 34 a 300A C 409 ic 3773 transistor bf 196 003G 33T4 2N3055

    7182N

    Abstract: 2N2856 2n3920 n4877 2N567
    Text: 3 E ìlìilE L E C T R O N IC S . IHC. DEVICE NUMBER INDEX DEVICE NO. 2N1252 2N 1253 2N1506 2N1506A 2 N 17 14 2N1715 2N 1 71 6 2 N 1717 2N 1 71 8 2N 1 71 9 2N 1 7 2 0 2N1721 2N 1724 2N 1 7 2 4 A 2N1725 2N 1 8 8 9 2N1890 2N1974 2 N 1975 2N 2 1 5 0 2N2151 2N 2 6 5 7


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    PDF 2N1252 2N1506 2N1506A 2N1715 2N1721 2N1725 2N1890 2N1974 2N2151 2N2811 7182N 2N2856 2n3920 n4877 2N567

    KSD 166

    Abstract: LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801
    Text: Hi-Rel PLANAR POW ER-2 AMP NPN • ii lll ii TYPE CASE REAKDOWNilllllliH if i VOLTAGES Veb ' VCE 2N 1252 TO-5 VCB 30 2N 1253 TO-5 30 20 2N 1506 60 40 2N 1506A TO-5 TO-5 2N 1714 TO-5 80 60 2N 1716 TO-5 80 90 90 2N 1718 MT-13 90 60 2N 1720 MT-13 90 2N 1889 TO-5


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    PDF MT-13 KSD 166 LT 7202 diode Kertron LA 4301 transistor KSP 13 801 KDA 1.2 2N5085 LT 7207 KSP 13 801 0/transistor KSP 13 801

    BU 290A

    Abstract: 3055N 2N3055 3773 P BDW 38 BD130 2 amp 20 - 60v diode p1060 BD181
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PRO FESSIO N A L/CO M M ERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 2N 2N 2N 2N 2N


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    PDF

    8 pin ic 3773

    Abstract: No abstract text available
    Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • E3B33cm 000DQ5M =1 ■ 33-/3 PROFESSIONAL/COMMERCIAL GRADE APPLICATION GENERAL PURPOSE POWER TRANSISTORS IN TO-2Q4AA PACKAGE Polarity Ic VCE0 SUS hFE@ Ic & VCE min/max Device 2N 3055 2N 3232 2N 3442


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    PDF E3B33c 000DQ5M lo-32 8 pin ic 3773

    transistor 40410

    Abstract: 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636 TA8201
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


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    PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) transistor 40410 40410 Transistor 300W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR 40391 40410 40988 200W AMPLIFIER 40362 40636

    40872

    Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
    Text: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.


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    PDF 2N6292) 2N6111) 2N5495) 2N6269) 2N4036) 2N6386 TA8201 2N2102) 40872 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111

    bd 3055

    Abstract: BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128
    Text: Typ type f MHz vcc 2N 2N 2N 2N 150 400 400 50 13 28 26 12,5 5713 5773 5774 5848 Pout bvcbo bvceo Gehause package 3,4 0,12 1 3,25 11 1,5 8 20 60 65 65 48 40 35 35 24 TO-128 TO-117 TO-129 145 v CEO mm V 'CD max A mm hpE max 45 60 80 1 1 1 40 40 40 250 160 160


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    PDF O-128 O-117 O-129 40PEP 80PEP OT-32 OT-32 O-66P bd 3055 BD 139 140 BD NPN transistors BDX 241 BD139-6 2N3055 BD139 3055 npn BD 139 N to128

    9033 transistor

    Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
    Text: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431


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    PDF 302N6082 BM80-12 SD1416 MM1601 MRF631 SD1144 PT8549 SD1214 N5054 2N3553 9033 transistor PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811

    TI1131

    Abstract: terminals of 2n3055 TI-487 TI487 2N4005 2N1047 2N389 2N122 TI-1151 TI-1131
    Text: Metal Can Power H igh R eliability Professional Typ es contin u ed Device Type 2N6272 2 N 40 0 3 2N6271 2 N 62 7 3 2N 6 3 2 2 2N 63 2 3 2N 63 2 4 2N 63 2 5 Polarity N PN NPN N PN NPN N PN NPN N PN NPN Outline T O -6 3 T O -6 3 T O -3 T O -6 3 T O -3 T O -6 3


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    PDF 2N6272 2N4003 T0-63 2N6271 2N6273 2N6322 2N6323 2N6324 TI1131 terminals of 2n3055 TI-487 TI487 2N4005 2N1047 2N389 2N122 TI-1151 TI-1131

    J2955

    Abstract: j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor
    Text: MOTOROLA Order this document by MJ2500/D SEMICONDUCTOR TECHNICAL DATA M J2955 See 2N 3055 M J2955A (See 2N 3055A ) M edium -Pow er Com plem entary Silicon Transistors M J2500 . . . for use as output devices in complementary general purpose amplifier applica­


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    PDF MJ2500/D J2955 J2955A J2500 J2501* J3000 J3001* O-204AA J2955 j3001 MJ2501 mj3001 J2501 transistor 2N 3055 2N3055M motorola MJ3000 3055a 2n 3055 transistor

    TIP 22 transistor

    Abstract: 2N5004 2N5002 2N5154 circuit 2N 3055 TRANSISTOR bd 147 Transistor Bd 140 tip 147 cw 2N5005 2N5152
    Text: TYPES 2N5002, 2N5004, 2N5152, 2N5154 N-P-N SILICON POWER TRANSISTORS H IG H -F R E Q U E N C Y POWER TR A N S IS TO R S W IT H COM PU TER -D ESIG N ED IS O TH E R M A L G E O M E TR Y For Complementary Use with 2N 50 03, 2N 50 05, 2N 51 51, and 2N 51 53 15 mJ Reverse Energy Rating w ith lc = 10 A and 4 V Reverse Bias


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    PDF 2N5002, 2N5004, 2N5152, 2N5154 2N5003, 2N5005, 2N5151, 2N5153 2N5002. 2N5004 TIP 22 transistor 2N5004 2N5002 circuit 2N 3055 TRANSISTOR bd 147 Transistor Bd 140 tip 147 cw 2N5005 2N5152

    RCA transistor 40410

    Abstract: RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410
    Text: H IG H -V O LT A G E N-P-N & P-N-P POW ER T Y P E S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 75 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V


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    PDF lc-30A 130x130 180x180 210x210 bu106 2n5840 2n5240 2N6510 2N6308 2n5805 RCA transistor 40410 RCA transistor 40319 RCA transistor 40406 RCA 40872 rca 40636 rca 40634 rca 40872 transistor rca 2N3771 power circuit RCA 40595 transistor rca 40410

    Schalter

    Abstract: 3055 TO-3P 2N 3055 2N3055
    Text: Typ f Vcc Pin po ut ßVCBO BV c e O Gehäuse t'rpe _ 2N 5941 2N 5942 2M 5943 f~ rrin IV Hz 30 30 250 28 28 15 50 m A 40PEP 80PEP 7 dB 65 65 40 package 35 35 30 D IA-4L D IA-4L


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    PDF 40PEP 80PEP OT-32 OT-32 O-66P Schalter 3055 TO-3P 2N 3055 2N3055

    RCA 40251

    Abstract: 2N3055H 2N3055H RCA 2n6254 2N6253 2N6371 40251 2N637 2N6371 RCA rca 2n6254
    Text: SEMELAB y i ï i l Sb' POWER T R A N S IS T O R S 2N3055H, 2N 6253, 2N 6254, 2N6371, 40251 H om etaxial*Base High-Power Silicon N-P-N Transistors • 2 N 6 2 5 4 : premium type from 2N3055H family Rugged, Broadly Applicable Devices For Industrial and Commercial Use


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    PDF 2N3055H, 2N6253, 2N6254, 2N6371, 2N3055H 2N6253 2N6251 RCA 40251 2N3055H RCA 2n6254 2N6371 40251 2N637 2N6371 RCA rca 2n6254

    je 3055

    Abstract: ST 3055 3055 la boitier to3 2N 3055 BDX14 BDX18 2N3054 pacb 3055 pnp
    Text: PNP POWER TRANSISTO RS T R A N S IS T O R S D E P U IS S A N C E PN P Complementary of 2N 3054, 2N 3055 Complémentaires des 2 N 3 0 5 4 , 2 N 30 55 TECHNOLOGICAL DATA D O N N E E S T E C H N O L O G IQ U E S - General purpose Material : Silicon Structure : Epitaxial base


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    PDF

    PNP 2SD

    Abstract: T1P61 2N3055 2N3055SD 2N3054 2N3439 2N3440 2N3713 BD224 2N3715
    Text: 1 SEMICONDUCTORS INC OTE D | fi!3bbSG 0D0DSÖ2 4 | Power Transistors •c D E V IC E Max v CEO M ax A v hFE M in / M a x <$ lç P O L A R IT Y Powered by ICminer.com A v CE sat M a x fti Iq V A »T M in p D (M a x) T C =25°C MHi W PACK­ AGE 2N 3054 2N 3055


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    PDF 2N3054 2N3055 2N3055SD 2N3439 2N3440 2N3713 2N3714 2N3715 2N3716 2N3740 PNP 2SD T1P61 BD224

    2N3055

    Abstract: 2N3055 curve 2n6253 2N6371 2N 6254
    Text: POWER TRANSISTORS PT TYPE NO. @ 25°C Watts M A X IM U M RATINGS Ic V V V A laarca i h FE liv r a MIN M AX El A V<fE V Sat Voltages V be V« V V Test Conditions Ib Ic A A IE B P ma 2N 3055 117 100 60 7 15 20 70 4 4 1.1 1.8 4 .4 5.0 2N 6253 115 55 45 5 15 20


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    PDF 2N6371 -ill50 2N3055 2N6253 2N6254 TWX-510-224-6582 2N3055 curve 2N6371 2N 6254

    2N3055 TO-220

    Abstract: 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C 2N3054 2N5293 BFT19B 2N5495
    Text: COMPLEMENTARY-PAIR POWER TYPES Hometaxial-Base/Epitaxial-Base 1.5 o 2 A \r = 2 .5 A U P-N-P N-P-N l„ 3 t o 3.5 A N-P-N P-N-P N-P-N P-N-P N-P-N L 4 to 6 A w L 121 o 17 A N-P-N * P-N-P P-N-P 2N5293 2N5294 2N6106 2N6107 2N5786 2N 5783 2N3054 2N5955 2N5495 2N 5494


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    PDF 2N5293 2N5294 ITO-2201 2N6106 2N6107 O-220) 2N5786 2N5783 2N3054 2N5955 2N3055 TO-220 2N3055, TO5 complementary-pair 2N3055 TO-3 40250 BUX66C BFT19B 2N5495

    J2955

    Abstract: 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA I1DM 2N 3055* Com plem entary Silicon Power Transistors PNP . . . designed for general-purpose switching and amplifier applications. • • • •Motoroli Piefm ed Devtoe DC Current Gain — hFE = 2 0 -7 0 @ lc = 4 Adc


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    PDF J2955 2N3055 J2955 2n3055 motorola transistor 2N 3055 st 2n3055 2n 3055 2N3055 ST 2N3055-1 adc 305-5 Motorola 3055 2n 3055 transistor

    2n3055 motorola

    Abstract: L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055
    Text: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by2N3055/D NPN 2N 3055* C om plem entary Silicon Pow er Transistors PNP M J2955 . . . designed for general-purpose switching and amplifier applications. • • • 'Motorola Preferred Device DC Current Gain — hpE = 2 0 -7 0 @ lc = 4 Adc


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    PDF by2N3055/D J2955 2N3055/D 2n3055 motorola L 3055 motorola 2N3055 NPN MOTOROLA POWER TRANSISTOR motorola 2n3055 motorola power transistor 2N3055 pin out TRANSISTOR 2n3055 J 2N3055

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor