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    2N1725 Price and Stock

    Microchip Technology Inc 2N1725

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    2N1725 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1725 API Electronics NPN Transistors Scan PDF
    2N1725 API Electronics Short form transistor data Short Form PDF
    2N1725 API Electronics Short form transistor data Short Form PDF
    2N1725 Diode Transistor NPN Transistor Selection Guide - TO-111 and TO-61 Packages Scan PDF
    2N1725 Diode Transistor Transistor Short Form Data Scan PDF
    2N1725 General Diode Transistor Selection Guide Scan PDF
    2N1725 General Semiconductor Low Frequency Transistors Scan PDF
    2N1725 General Transistor Power Transistor Selection Guide Scan PDF
    2N1725 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N1725 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N1725 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N1725 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N1725 Unknown Vintage Transistor Datasheets Scan PDF
    2N1725 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N1725 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N1725 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1725 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N1725 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N1725 Unknown GE Transistor Specifications Scan PDF
    2N1725 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    2N1725 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3622

    Abstract: 2N3445 2N3446 2N3448 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron
    Text: high-rei power transistors 88 SILICON NPN TRANSISTORS 1 0 Amp BREAKDOWN VOLTAGES VeB VEB VeE TYPE NUMBER CASE SIZE 2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3491 2N3492 2N3620 2N3621 2N3622 2N3624 2N3625 2N3626 2N3628 2N3629


    Original
    PDF 2N1724 2N1725 2N3445 2N3446 2N3447 2N3448 2N3487 2N3488 2N3489 2N3490 2N3622 2n3626 TO61 MT27 2n3624 2n3492 2N1724 solitron

    2SC3303 to-251

    Abstract: 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634
    Text: POWER SILICON NPN Item Part Number Number I C 5 -10 15 -20 25 30 35 40 45 -50 ~ BUR10 BUR10 BUR10 SVTSO-5 SVTSO-5 SVTBO-5 2N2SS0 2N4113 2N4115 2N4306 2N4309 2SC520 2N1725 2N3S50 SOT5636 SOT63S3 2N2S93 2N5326 "~""";JIOI'\L. 55 - -60 2SC3367 2S0961 2N5337


    Original
    PDF O-l11 O-220AB O-220 O-220var O-251 2SC3303 to-251 2S0586 2SC3303 2N4306 bo 913 bur10 SML1634

    Untitled

    Abstract: No abstract text available
    Text: 2N1725 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)120 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)3.0 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)2.0


    Original
    PDF 2N1725 Freq10M

    2N1674

    Abstract: Emihus 2N1605A 2N755 BC447 2N1724 2N2891 2N1666 BSW39 2N1664
    Text: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31


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    PDF MPS5858 BFR50 TIPP31B ST4341 BSW65 2N1572 2N738 2N2517 2N755 2N1674 Emihus 2N1605A BC447 2N1724 2N2891 2N1666 BSW39 2N1664

    2N1724

    Abstract: 2N3624
    Text: 8440355 SPACE POWER ELECTRONICS "'"""SPACE POWER ELECTRONICS 89C flT 00107 D 7 J 5 . E DF| 6440355 DDD01D7 Hi-Rel PLANAR P O W E R - 1 0 AMP WH TO-66 40W@T =100°C TO-5 5W@T =100°C o P TO-3 80W@T =100°C *A11 leads e l e c t r i c a l l y i s o l a t e d from case


    Original
    PDF DDD01D7 2N1724 2N1725 2N2101 2N2811 2N2812 2N2813 2N2814 2N3445 2N3446 2N3624

    IC 4025

    Abstract: 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487
    Text: NEW ENGLAND SEMICONDUCTOR STE D • bSbMTTa 0000053 5TÛ * N E S NPN TO-61 I max = 5 to 2 0 A V ceo(sus) = 4 0 -3 0 0 V fT = 1 to 4 0 MHz See page 13 for isolated collector versions [ Type No. 2N1724 2N1724A 2N1725 2N2811 PNP Comple­ ment VCE (SAT) @ IC/lB


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    PDF 0-300V 2N1724 1OQ012O 2N1724A 1OS018O 2N1725 2N2813/ 2N3489 2N3490 2N3491 IC 4025 2N1724A 2N1724 sf 1012 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487

    2N1724

    Abstract: 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489
    Text: General Transistor Corporation CASE le m a x TO-61 ss 5 to 20A V c e o (s u s ) = 4 0 -3 0 0 V NPN Power Transistors Typ. NO. VCEO («•) M 1C (mu) (A) hFE C/VCE |n lH U l & A/Y) 2N1724 2N1724A 2N1725 2N2611 80 120 80 50 5 5 5 10 20-90 @2/15 30-90 @2/15


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    PDF 0-300V 2N1724 2N1724A 2N1725 2N2811 2N2812 2N6590 2N6689 2N6690 2N6691 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3487 2N3488 2N3489

    2N1725

    Abstract: 2N1723 diode sg 5 ts
    Text: TYPES 2N1723, 2N1725 N-P-N TRIPLE-DIFFUSED MESA SILICON TRANSISTORS IlD H ui C < < r *o —r m High-Frequency Power Transistors w m co Sg s SO Watts at 100°C Case Temperature O Maximum Res of 0.5 Ohm at 2 Amperes U Maximum V be of 2 Volts at 2 Amperes lc


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    PDF 2N1723, 2N1725 2N1725 2N1723 diode sg 5 ts

    transistor 2N43

    Abstract: 2N3491 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
    Text: N EW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 PACKAGE DEVICE TYPE VcEO sus VOLTS (max) AMPS NPN TO-61 2N1724A 80 5 20-90@15 2N1724A 120 5 lAm M 2N1725 80 2N2811 • Ic ^*FE@ VcE<sat) IC/ ^ C E pr D * WATTS fr (MHz) l@2/,2 50 10 30-90@2/15 ,6@2/.2


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    PDF 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 transistor 2N43

    2N2632

    Abstract: No abstract text available
    Text: t le = 5.0 AMPS 4-6 DEVICE TYPE PACKAGE 2N1208 2NÎ209 2N1212 2N1616 2N1617 TO-61 TO-61 TO-61 TO-61 TO-61 2N1618 2N1702 2N1724 2N1724A 2N1725 TO-61 TO-3 TO-61 TO-61 TO-61 2N2632 2N2633 2N2634 2N2657 2N2658 hFE@ VOLTS BVeb0 VOLTS P D@ 100°C WATTS 60 45 60


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    PDF 2N1208 2N1212 2N1616 2N1617 2N1618 2N1702 2N1724 2N1724A 2N1725 2N2632

    7182N

    Abstract: 2N2856 2n3920 n4877 2N567
    Text: 3 E ìlìilE L E C T R O N IC S . IHC. DEVICE NUMBER INDEX DEVICE NO. 2N1252 2N 1253 2N1506 2N1506A 2 N 17 14 2N1715 2N 1 71 6 2 N 1717 2N 1 71 8 2N 1 71 9 2N 1 7 2 0 2N1721 2N 1724 2N 1 7 2 4 A 2N1725 2N 1 8 8 9 2N1890 2N1974 2 N 1975 2N 2 1 5 0 2N2151 2N 2 6 5 7


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    PDF 2N1252 2N1506 2N1506A 2N1715 2N1721 2N1725 2N1890 2N1974 2N2151 2N2811 7182N 2N2856 2n3920 n4877 2N567

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR 3918590 GENERAL « S EMI CON DU CT OR DE 1 3^105^0 □□□5GT5 fl 95D . 02092 D le = 5.0 AMPS - r • W 'CPi BVceo/ DEVICE TYPE PACKAGE 2N1208 2N1209 2N1212 2N1616 2N1617 TO -61 TO -61 TO -61 TO -61 TO -61 2N1618 2N1724 2N1724A 2N1725


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    PDF 2N1208 2N1209 2N1212 2N1616 2N1617 2N1618 2N1724 2N1724A 2N1725 2N2632

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    10J2

    Abstract: 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813
    Text: NEW ENGLAND SEMICOND UCT OR INIPIM T O - 6 1 PNP Comple­ ment VCEO SUS (V) 0000053 [ See page 13 for isolated collector versions Case 805 Type No. S^E D VCE (SAT) @ IC/lB ( V @ A/A) VBE @ IC/VCE (V @ Art) VBE (SAT) @ IC/lB STÛ • NES I(max) = 5 to 2 0 A


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    PDF 0-300V 2N1724 2N1724A 2N1725 2N6588 2N6589 2N6590 2N6689 2N6690 2N6691 10J2 2N6563 3f05 sf 1012 2N1724 2N1724A 2N1725 2N2811 2N2812 2N2813

    2N4116

    Abstract: 2N5304 2N2658 2N2849 2N2850 2N2851 2N2852 2N2880 2N4305 2N4309
    Text: 8 1 3 4 6 9 3 S E M I CO A 40 j Ë~| 6 1 3 ^ 3 OOOOlBb 3 ^~T‘<J>7 - Q \ NPN SILICON POWER TRANSISTORS C ont’d) Electrical Characteristics @ 25°C Maximum Ratings Device Dissipation Type No. @25°C NPN (Case) Watts 30 2N2880 5 2N2852 5 2N2851 5 2N2850


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    PDF fll34fc, 2N2880 2N2852 2N2851 2N2850 -2N2658 2N2849 2N4309 2N4305 2N5336 2N4116 2N5304 2N2658

    TFK 404

    Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
    Text: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317


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    PDF 20nttc* 10N12* TFK 404 T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09

    2N5730

    Abstract: 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5285
    Text: Il 000012a NPNTO-111 isolated collector (cont’d) ZTB483&#39;52 D IO D E T R A N S I S l U K C O IN C . 8 4 D ~Ô Ô l2 6“ D1QDE TRâ(\)515TQB CQ„ JWC. (201) 666*0400 • Telex; 139-385 • Outslde NY & NJ area cali TOLL FREE 800-526-4581 FAX No. 201-675-5863


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    PDF NPNTO-111 2T548352 2N4115 2N4116 2N5002 2N5004 2N5083 2N5084 2N5085 2N5284 2N5730 2N5285

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    axial zener diodes marking code c3v6

    Abstract: H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode
    Text: SESCOSEM Introduction Sescosem, Societe Europeenne de Semiconducteurs et de Microelectronique, is a branch of the Thomson-CSF Group, one of the world’s largest High Technology combines which includes Ducati Microfaro, LCC-CICE, COFELEC and many other companies.


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    PDF BR805A BR81A BR82A BR84A BR86A BR88A BR91A BR92A BR94A BR96A axial zener diodes marking code c3v6 H 48 zener diode ZENER DIODES CODE ID CHART diode zener ph c5v6 74151N HS7030 sescosem SESCOSEM semiconductor diode zener BZX 61 C 10 BZX 460 zener diode

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2n2301

    Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
    Text: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74


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    PDF 2N727 2N869A 2N929A 2N930' 2N930A 2N1572 2N1S73 2N1574 2N24S3 2N2484 2n2301 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815

    4116 2n

    Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
    Text: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE


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    PDF 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2NI718 2N1719 4116 2n j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    TO61 package

    Abstract: 2N1724A 2N5540 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-61 VcEO Ic ^FE@ IC/ ^CE fr MHz l@2/.2 50 10 30-90@2/15 ,6@2/.2 50 10 5 50-150@2/15 l@2/.2 50 10 50 10 20-60@5/5 .5 @5/. 5 40 15 2N2812 50 10 40-120@5/5 ,5 @ 5/.5 40 15 2N2813 70 10 20-60@5/5 , 5 @ 5/.5


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    PDF 2N1724A 2N1725 2N2811 2N2812 2N2813 2N2814 2N3489 2N3490 2N3491 TO61 package 2N5540