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    Infineon Technologies AG IPI26CN10N-G

    MOSFET N-CH 100V 35A TO262-3
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    DigiKey IPI26CN10N-G Tube 500
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    Infineon Technologies AG IPP26CN10NGHKSA1

    MOSFET N-CH 100V 35A TO220-3
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    DigiKey IPP26CN10NGHKSA1 Tube
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    Infineon Technologies AG IPB26CN10NGATMA1

    MOSFET N-CH 100V 35A D2PAK
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    DigiKey IPB26CN10NGATMA1 Reel
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    EBV Elektronik IPB26CN10NGATMA1 21 Weeks 1
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    26CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG IPB26CN10N IPI26CN10N IPP26CN10N PG-TO220-3
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPP26CN10N G

    25CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG

    25CN10N

    Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G

    Untitled

    Abstract: No abstract text available
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max (TO252) 25 mW


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 IPB26CN10N IPI26CN10N IPP26CN10N
    Text: 26CN10N G IPD25CN10N G 26CN10N G 26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3