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    IPD25CN10N Search Results

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    IPD25CN10N Price and Stock

    Infineon Technologies AG IPD25CN10NGATMA1

    MOSFET N-CH 100V 35A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD25CN10NGATMA1 Cut Tape 3,326 1
    • 1 $1.69
    • 10 $1.071
    • 100 $1.69
    • 1000 $0.51788
    • 10000 $0.51788
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    IPD25CN10NGATMA1 Digi-Reel 3,326 1
    • 1 $1.69
    • 10 $1.071
    • 100 $1.69
    • 1000 $0.51788
    • 10000 $0.51788
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    IPD25CN10NGATMA1 Reel 2,500 2,500
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    • 10000 $0.43275
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    Avnet Americas IPD25CN10NGATMA1 Reel 16 Weeks 2,500
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    Mouser Electronics IPD25CN10NGATMA1 13,984
    • 1 $1.51
    • 10 $0.981
    • 100 $0.673
    • 1000 $0.495
    • 10000 $0.442
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    Verical IPD25CN10NGATMA1 365,000 2,500
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    • 10000 $0.4645
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    IPD25CN10NGATMA1 6,777 35
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    • 100 $0.6363
    • 1000 $0.555
    • 10000 $0.5025
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    IPD25CN10NGATMA1 2,500 2,500
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    • 10000 $0.642
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    Newark IPD25CN10NGATMA1 Bulk 1
    • 1 $1.19
    • 10 $0.981
    • 100 $0.763
    • 1000 $0.526
    • 10000 $0.45
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    Rochester Electronics IPD25CN10NGATMA1 255 1
    • 1 $0.4808
    • 10 $0.4808
    • 100 $0.452
    • 1000 $0.4087
    • 10000 $0.4087
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    Chip1Stop IPD25CN10NGATMA1 Cut Tape 6,777
    • 1 $1.39
    • 10 $0.883
    • 100 $0.594
    • 1000 $0.454
    • 10000 $0.411
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    EBV Elektronik IPD25CN10NGATMA1 17 Weeks 2,500
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    Infineon Technologies AG IPD25CN10NGBUMA1

    MOSFET N-CH 100V 35A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPD25CN10NGBUMA1 Cut Tape
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    IPD25CN10NGBUMA1 Digi-Reel 1
    • 1 $0.9
    • 10 $0.9
    • 100 $0.9
    • 1000 $0.9
    • 10000 $0.9
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    IPD25CN10NGBUMA1 Reel
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    New Advantage Corporation IPD25CN10NGBUMA1 912 1
    • 1 -
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    • 100 $0.4
    • 1000 $0.4
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    Infineon Technologies AG IPD25CN10NG

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    Bristol Electronics IPD25CN10NG 104
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    ComSIT USA IPD25CN10NG 3,980
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    IPD25CN10N Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPD25CN10N G Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 25.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 35.0 A; Original PDF
    IPD25CN10NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF
    IPD25CN10NGATMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 35A TO252-3 Original PDF
    IPD25CN10NGBUMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 35A TO252-3 Original PDF

    IPD25CN10N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG IPB26CN10N IPI26CN10N IPP26CN10N PG-TO220-3
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPP26CN10N G

    25CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG

    25CN10N

    Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G

    Untitled

    Abstract: No abstract text available
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) • Very low on-resistance R DS(on) VDS 100 V RDS(on),max (TO252) 25 mW


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3

    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3 IPB26CN10N IPI26CN10N IPP26CN10N
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		PDF IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N PG-TO263-3 PG-TO252-3 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PG-TO220-3

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP