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    ZXTP Price and Stock

    Diodes Incorporated ZXTP2012GTA

    TRANS PNP 60V 5.5A SOT223-3
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    DigiKey ZXTP2012GTA Cut Tape 99,489 1
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    ZXTP2012GTA Digi-Reel 99,489 1
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    ZXTP2012GTA Reel 98,000 1,000
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    TME ZXTP2012GTA 531 1
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    Diodes Incorporated ZXTP2013ZTA

    TRANS PNP 100V 3.5A SOT89-3
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    DigiKey ZXTP2013ZTA Cut Tape 28,001 1
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    ZXTP2013ZTA Digi-Reel 28,001 1
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    ZXTP2013ZTA Reel 27,000 1,000
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    ComSIT USA ZXTP2013ZTA 1,000
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    Avnet Silica ZXTP2013ZTA 12,000 10 Weeks 1,000
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    Diodes Incorporated ZXTP25012EFHTA

    TRANS PNP 12V 4A SOT23-3
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    DigiKey ZXTP25012EFHTA Reel 6,000 3,000
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    Avnet Silica ZXTP25012EFHTA 3,000 28 Weeks 3,000
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    Diodes Incorporated ZXTP03200BZTA

    TRANS PNP 200V 2A SOT89-3
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    DigiKey ZXTP03200BZTA Cut Tape 2,341 1
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    ZXTP03200BZTA Digi-Reel 2,341 1
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    ZXTP03200BZTA Reel 1,000 1,000
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    Avnet Asia ZXTP03200BZTA 8 Weeks 1,000
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    New Advantage Corporation ZXTP03200BZTA 2,000 1
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    Diodes Incorporated ZXTP19100CZQTA

    PWR LOW SAT TRANSISTOR SOT89 T&R
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    DigiKey ZXTP19100CZQTA Reel 1,000 1,000
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    ZXTP19100CZQTA Digi-Reel 1,000 1
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    ZXTP19100CZQTA Cut Tape 1,000 1
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    ZXTP Datasheets (202)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZXTP01500BGQTA Diodes Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - PWR HI VOLTAGE TRANSISTOR SOT223 Original PDF
    ZXTP01500BGQTC Diodes Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - PWR HI VOLTAGE TRANSISTOR SOT223 Original PDF
    ZXTP01500BGTC Diodes Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - PWR HI VOLTAGE TRANSISTOR SOT223 Original PDF
    ZXTP03200BG Diodes 200V PNP Low VCE(sat) transistor in SOT223 Original PDF
    ZXTP03200BGTA Diodes Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP Original PDF
    ZXTP03200BZ Diodes 2 00 V PN P L OW V C E ( s a t ) TRAN SIST OR IN SOT -89 Original PDF
    ZXTP03200BZTA Diodes Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP 200V 2A SOT89 Original PDF
    ZXTP05120HFF Diodes PNP medium power Darlington transistor Original PDF
    ZXTP05120HFF Zetex Semiconductors 120V, SOT23F, PNP medium power Darlington transistor Original PDF
    ZXTP05120HFFTA Zetex Semiconductors 120V, SOT23F, PNP medium power Darlington transistor Original PDF
    ZXTP07012EFF Diodes 12V, SOT23F, PNP medium power transistor Original PDF
    ZXTP07012EFF Zetex Semiconductors 12V, SOT23F, PNP medium power transistor Original PDF
    ZXTP07012EFFTA Zetex Semiconductors 12V, SOT23F, PNP medium power transistor Original PDF
    ZXTP07012EFFTA Zetex Semiconductors Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS PNP MED PWR 12V SOT23F-3 Original PDF
    ZXTP07040DFF Diodes PNP medium power transistor Original PDF
    ZXTP07040DFF Zetex Semiconductors 40V, SOT23F, PNP medium power transistor Original PDF
    ZXTP07040DFFTA Zetex Semiconductors 40V, SOT23F, PNP medium power transistor Original PDF
    ZXTP08400BFF Diodes PNP medium power high voltage transistor Original PDF
    ZXTP08400BFF Zetex Semiconductors 400V, SOT23F, PNP medium power high voltage transistor Original PDF
    ZXTP08400BFFTA Zetex Semiconductors 400V, SOT23F, PNP medium power high voltage transistor Original PDF
    ...

    ZXTP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    53Z Zetex

    Abstract: 1a SOT89 IC35
    Text: ZXTP2009Z 40V PNP HIGH GAIN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -40V : RSAT = 29m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 40V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


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    PDF ZXTP2009Z -60mV ZXTP2009ZTA 522-ZXTP2009ZTA ZXTP2009ZTA 53Z Zetex 1a SOT89 IC35

    ic 7495

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.


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    PDF ZXTP25060BFH -85mV ZXTN25060BFH AEC-Q101 DS33374 ic 7495

    ZXTP19060CG

    Abstract: TS16949 ZXTN19060CG ZXTP19060CGTA
    Text: ZXTP19060CG 60V PNP medium transistor in SOT223 Summary BVCEO > -60V BVECO > -7V IC cont = 5A VCE(sat) < -80mV @ -1A RCE(sat) = 50m⍀ PD = 3.0W Complementary part number ZXTN19060CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor


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    PDF ZXTP19060CG OT223 -80mV ZXTN19060CG OT223 ZXTP19060CGTA D-81541 ZXTP19060CG TS16949 ZXTN19060CG ZXTP19060CGTA

    TS16949

    Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
    Text: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor


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    PDF ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ

    ZXTP558

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP558L 400V PNP High Voltage Transistor in TO92L Features and Benefits Mechanical Data • • • • • • • • • • BVCEO > 400V Power dissipation PD = 1W Totally Lead-Free & Fully RoHS compliant Notes 1 & 2


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    PDF ZXTP558L AEC-Q101 ZXTP558LSTZ ZXTP558L DS32186 ZXTP558

    ZXTP2014G

    Abstract: ZXTP2014
    Text: A Product Line of Diodes Incorporated ZXTP2014G Green 140V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -140V IC = -4A high Continuous Collector Current ICM = -10A Peak Pulse Current


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    PDF ZXTP2014G OT223 -140V -120mV AEC-Q101 OT223 J-STD-020 ZXTP2014G DS33716 ZXTP2014

    ZXTP2012GTA

    Abstract: sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP
    Text: ZXTP2012G 60V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -60V : RSAT = 39m ; IC = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 60V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTP2012G OT223 OT223 ZXTP2012GTA ZXT26100 ZXTP2012GTA sot223 device Marking ZXTP2012G ZXTP2012GTC Bv 42 transistor zxtP

    Bv 42 transistor

    Abstract: zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC
    Text: ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = -100V : RSAT = 60m ; IC = -5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits


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    PDF ZXTP2013G OT223 -100V OT223 ZXTP2013GTA ZXTP2013GTC DEV26100 Bv 42 transistor zxtP sot223 device Marking ZXTP2013G ZXTP2013GTA ZXTP2013GTC

    ZXTP2014Z

    Abstract: ZXTP2014ZTA
    Text: ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -140V : RSAT = 85m ; IC = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low on state losses making it ideal for use in DC-DC circuits, line


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    PDF ZXTP2014Z -140V ZXTP2014ZTA ZXTP2014Z ZXTP2014ZTA

    ZXTP2025

    Abstract: zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23
    Text: ZXTP2025F 50V, SOT23, PNP medium power transistor Summary V BR CEO > -50V IC(cont) = -5A RCE(sat) = 30m⍀ typical VCE(sat) < - 60mV @ -1A PD = 1.2W Complementary part number: ZXTN2031F Description Advanced process capability and package design have been used to


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    PDF ZXTP2025F ZXTN2031F ZXTP2025 zxtp2025f marking 12W SOT23 zxtp2025fta marking 312 SOT23 zetex ZXTN2031F ZXTN2031 mosfet marking 12W 12W MARKING sot23

    TRANSISTOR MARKING 1d3

    Abstract: ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF
    Text: ZXTN07012EFF 12V, SOT23F, NPN high gain power transistor Summary BVCEO > 12V BVECO > 3V IC cont = 4.5A VCE(sat) < 70mV @ 1A RCE(sat) = 43m⍀ PD = 1.5W Complementary part number ZXTP07012EFF Description C This low voltage NPN transistor has been designed for applications


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    PDF ZXTN07012EFF OT23F, ZXTP07012EFF OT23F OT23F TRANSISTOR MARKING 1d3 ZXTN07012EFF ZXTN07012EFFTA ZXTP07012EFF

    TS16949

    Abstract: ZXTN19020DFF ZXTN19020DFFTA ZXTP19020DFF
    Text: ZXTN19020DFF 20V, SOT23F, NPN high gain power transistor Summary BVCEX > 70V BVCEO > 20V BVECO > 4.5V IC cont = 6.5A VCE(sat) = < 30mV @ 1A RCE(sat) = 18m⍀ PD = 1.5W Complementary part number ZXTP19020DFF Description C Advanced process capability has been used to maximize the


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    PDF ZXTN19020DFF OT23F, ZXTP19020DFF OT23F D-81541 TS16949 ZXTN19020DFF ZXTN19020DFFTA ZXTP19020DFF

    TS16949

    Abstract: ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL
    Text: ZXTN25040DFL 40V, SOT23, NPN low power transistor Summary BVCEX > 130V BVCEO > 40V BVECO > 6V IC cont = 1.5A VCE(sat) < 85mV @ 1A RCE(sat) = 59m⍀ PD = 350mW Complementary part number ZXTP25040DFL Description C Advanced process capability has been used to achieve high current gain


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    PDF ZXTN25040DFL 350mW ZXTP25040DFL D-81541 TS16949 ZXTN25040DFL ZXTN25040DFLTA ZXTP25040DFL

    ZXTN08400BFF

    Abstract: ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking
    Text: ZXTN08400BFF 400V, SOT23F, NPN medium power high voltage transistor Summary BVCEX > 450V BVCEO > 400V BVECO > 6V IC cont = 0.5A VCE(sat) < 175mV @ 500mA PD = 1.5W Complementary part number ZXTP08400BFF Description C This NPN transistor has been designed for applications requiring high


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    PDF ZXTN08400BFF OT23F, 175mV 500mA ZXTP08400BFF OT23F ZXTN08400BFF ZXTN08400BFFTA ZXTP08400BFF sot23 6 device Marking

    ZXTN25012EFH

    Abstract: ZXTP25012EFH TS16949 ZXTP25012EFHTA
    Text: ZXTP25012EFH 12V, SOT23, PNP medium power transistor Summary BVCEO > -12V hFE > 500 IC cont = -4A RCE(sat) = 40m⍀ VCE(sat) < -65mV @ 1A PD = 1.25W Complementary part number ZXTN25012EFH Description C Advanced process capability and package design have been used to


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    PDF ZXTP25012EFH -65mV ZXTN25012EFH D-81541 ZXTN25012EFH ZXTP25012EFH TS16949 ZXTP25012EFHTA

    TS16949

    Abstract: ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA
    Text: ZXTP23015CFH 15V, SOT23, PNP medium power transistor Summary V BR CES > -15V, V(BR)CEO > -15V V(BR)ECO > -6V IC(CONT) = -6A RCE(SAT) = 20m⍀ typical VCE(SAT) < -36mV @ -1A PD = 1.25W Complementary part number ZXTN23015CFH Description C Advanced process capability and package design have been used to


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    PDF ZXTP23015CFH -36mV ZXTN23015CFH D-81541 TS16949 ZXTN23015CFH ZXTP23015CFH ZXTP23015CFHTA

    zxtp25020cfh

    Abstract: No abstract text available
    Text: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to


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    PDF ZXTP25020CFH -55mV ZXTN25020CFH D-81541 zxtp25020cfh

    TS16949

    Abstract: ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541 TS16949 ZXTN2038F ZXTN2038FTA ZXTN2038FTC ZXTP2039F N38 transistor 443-813

    ZXTP03200BZTA

    Abstract: sot-89 marking code 5A pnp 200v ZXTP03200BZ dcdc sot-89
    Text: A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E s a t TRAN SIST OR IN SOT -89 Please click here to visit our online spice models database. Features • • • • • • • • • • Mechanical Data BVCEO > -200V BVECO > -2V


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    PDF ZXTP03200BZ -200V -160mV OT-89 J-STD-020 DS31902 ZXTP03200BZTA sot-89 marking code 5A pnp 200v ZXTP03200BZ dcdc sot-89

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTN2038F SOT23 80 volt NPN silicon planar medium power transistor Summary V BR CEV > 80V V(BR)CEO > 60V Ic(cont) = 1A Vce(sat) < 500mV @ 1A Complementary type ZXTP2039F Description This transistor combines high gain, high current operation and low saturation voltage making it


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    PDF ZXTN2038F 500mV ZXTP2039F ZXTN2038FTA D-81541

    ZXTN25100CFH

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP25100CFH 100V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > -100V Maximum Continuous Collector Current IC = -1A VCE sat < -220mV @ -1A


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    PDF ZXTP25100CFH -100V -220mV ZXTN25100CFH AEC-Q101 J-STD-020 MIL-STD-202, DS33758

    ZXTN5551F

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP5401FL 150V PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > -150V Maximum Continuous Collector Current IC = -600mA


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    PDF ZXTP5401FL -150V -600mA -50mA ZXTN5551FL AEC-Q101 J-STD-020 MIL-STD-202, DS33724 ZXTN5551F

    4A SOT223 MARKING CODE

    Abstract: NPN 1A 100V SOT-223
    Text: NOT RECOMMENDED FOR NEW DESIGN USE ZXTP2013G DZT953 NEW PRODUCT PNP SURFACE MOUNT TRANSISTOR Features • • • • • • Epitaxial Planar Die Construction Complementary NPN Type Available DZT853 Ideally Suited for Automated Assembly Processes Ideal for Medium Power Switching or Amplification Applications


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    PDF ZXTP2013G DZT953 DZT853) OT-223 J-STD-020D MIL-STD-202, DS30941 4A SOT223 MARKING CODE NPN 1A 100V SOT-223

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTP2008Z ZX5T949Z MPPS 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = -30V : RSAT = 24m ; IC = -5.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 30V PNP transistor offers low on state


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    PDF ZXTP2008Z ZX5T949Z