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    ya868c12

    Abstract: ya868c12r ya868
    Text: YA868C12R 30A (120V / 30A ) [0401] High Voltage Schottky barrier diode Outline drawings, mm 10+0.5 30 Tc=25°C MAX. 3.7±0.2 IO V V A 1.2 14 -0.5 120 0.88 15±0.2 Characteristics YA868C12R Units Condition 6.4±0.2 2.7±0.1 Major characteristics VRRM VF 4.5±0.2


    Original     		PDF YA868C12R YA868C12R O-220 ya868c12 ya868

    mp2a5100

    Abstract: ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28
    Text: 富士電機半導体 総 合 カ タ ログ FUJI SEMICONDUCTORS ● パワー MOSFET Power MOSFETs ● 整流ダイオード Rectifier diodes ● パワーデバイス Power devices ● 集積回路 Integrated circuits ● 圧力センサ Pressure sensors


    Original     		PDF RH011h 2007-10B120FIS mp2a5100 ya868c12 YA868C15 2sk4004 YG865C10 F5049 diode 3a05 Diode SMD SJ 24 Diode SMD SJ 09 Diode SMD SJ 28

    YA868C15

    Abstract: ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R
    Text: 整流ダイオード / Rectifier Diodes • 高耐圧ショットキーバリアダイオード High Voltage Schottky-Barrier Diodes（SBD） デュアル 2 in one-package 形 式 Device type YA862C12R YG862C12R TS862C12R YA865C12R YG865C12R TS865C12R


    Original     		PDF O220AB O220F YA971S6R YG971S6R YA972S6R YG972S6R YA868C15 ya868c12 YG972S6 yg862c15 yg865c15 YG862C15R YG975C6R YA865C12R yg971s6 YG862C12R