2N6661
Abstract: VN88AFD
Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS
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2N6661/VN88AFD
2N6661
VN88AFD
08-Apr-05
2N6661
VN88AFD
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0808L
Abstract: s4 vishay VN0808L VN0808LS VQ1006P S3D21
Text: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V
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VN0808L/LS,
VQ1006P
VN0808L
VN0808LS
18-Jul-08
0808L
s4 vishay
VN0808L
VN0808LS
VQ1006P
S3D21
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Untitled
Abstract: No abstract text available
Text: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOSFET Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS
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2N6661JAN/JANTX/JANTXV
2N6661/VN88AFD
VNDQ09
P-37515--Rev.
04-July-94
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VN0808L
Abstract: VN0808LS VQ1006P
Text: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V
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VN0808L/LS,
VQ1006P
VN0808L
VN0808LS
O-226AA)
S-58620--Rev
21-Jun-99
VN0808L
VN0808LS
VQ1006P
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TO-205AD
Abstract: 2N6661 VN88AFD
Text: 2N6661/VN88AFD N-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications D D D D
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
P-37655--Rev.
25-Jul-94
TO-205AD
2N6661
VN88AFD
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marking code vishay SILICONIX to-39
Abstract: jantx2n6661
Text: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications
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2N6661JAN/JANTX/JANTXV
08-Apr-05
marking code vishay SILICONIX to-39
jantx2n6661
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JANTX2N6661
Abstract: JAN2N6661 JANTXV2N6661 JANTX2N6661 reliability VNDQ09
Text: 2N6661JAN/JANTX/JANTXV Vishay Siliconix JAN Qualified N-Channel 90-V D-S MOSFETs PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D Military Applications
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2N6661JAN/JANTX/JANTXV
2N6661/VN88AFD
VNDQ09
S-04279--Rev.
16-Jul-01
JANTX2N6661
JAN2N6661
JANTXV2N6661
JANTX2N6661 reliability
VNDQ09
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VQ1006P
Abstract: 0808L VN0808L VN0808LS
Text: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V
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VN0808L/LS,
VQ1006P
VN0808L
VN0808LS
08-Apr-05
VQ1006P
0808L
VN0808L
VN0808LS
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TO-205AD
Abstract: No abstract text available
Text: 2N6661JAN/JANTX/JANTXV N-Channel Enhancement-Mode MOS Transistors Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 90 4 @ VGS = 10 V 0.8 to 2 0.86 Features Benefits Applications D D D D D D D D D D D D D Military Applications D Direct Logic-Level Interface: TTL/CMOS
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2N6661JAN/JANTX/JANTXV
2N6661/VN88AFD
VNDQ09
P-37515--Rev.
04-July-94
TO-205AD
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VN0808M
Abstract: VQ1006P VN0808L
Text: VN0808L/M, VQ1006P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VN0808L rDS(on) Max (W) VGS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V 0.8 to 2.5 0.4 80 VN0808M VQ1006P 90 ID (A)
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VN0808L/M,
VQ1006P
VN0808L
VN0808M
O-226AA)
P-37992--Rev.
08-Aug-94
VN0808M
VQ1006P
VN0808L
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VN88AFD
Abstract: N-CHANNEL MOSFET 2N6661
Text: 2N6661/VN88AFD Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 Features Benefits Applications
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
P-37655--Rev.
VN88AFD
N-CHANNEL MOSFET
2N6661
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2N6661
Abstract: 2N6661 Siliconix VN88AFD marking code vishay SILICONIX to-39
Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 2N6661 90 4 @ VGS = 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGS = 10 V 0.8 to 2.5 1.29 FEATURES BENEFITS APPLICATIONS
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2N6661/VN88AFD
2N6661
VN88AFD
2N6661)
S-04279--Rev.
16-Jul-01
2N6661
2N6661 Siliconix
VN88AFD
marking code vishay SILICONIX to-39
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0808L
Abstract: 0808LS VN0808L equivalent VN0808L VN0808LS VQ1006P S3D21
Text: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VN0808L 80 VN0808LS VQ1006P 90 VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V
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VN0808L/LS,
VQ1006P
VN0808L
VN0808LS
O-226AA)
S-04279--Rev
16-Jul-01
0808L
0808LS
VN0808L equivalent
VN0808L
VN0808LS
VQ1006P
S3D21
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b0808
Abstract: VN0808L VN0808M VQ1006P
Text: VN0808L/M, VQ1006P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VN0808L 80 VN0808M VQ1006P 90 rDS(on) Max (W) VGS(th) (V) ID (A) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V
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VN0808L/M,
VQ1006P
VN0808L
VN0808M
O226AA)
P-37992--Rev.
b0808
VN0808L
VN0808M
VQ1006P
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VNDQ09
Abstract: No abstract text available
Text: atS g& VN88AFD N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY b A V (BR)DSS 4 80 Performance Curves: FRONT VIEW TO-220SD o 1.29 VNDQ09 1 SOURCE 2 GATE 3 & TAB - DRAIN 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) SYMBOL LIMITS
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VN88AFD
O-220SD
VNDQ09
VNDQ09
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VN0808M
Abstract: VNDQ09 VNDQ3CHP VN88A TO-205AD
Text: VNDQ09 N-Channel Enhancement-Mode MOSFETs iTSS?SS.xd DEVICE TYPE PACKAGE Single TO-39 TO-205AD Single TO-237 • VN0808M Single TO-220SD • VN88AFD Quad 14-Pin Plastic • VQ1006J Quad 14-Pin Dual-ln-Line • VQ1006P Single Chip • Available as VNDQ3CHP
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VNDQ09
O-205AD)
O-237
O-220SD
14-Pin
2N6661
VN0808M
VN88AFD
VQ1006J
VNDQ3CHP
VN88A
TO-205AD
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2N6661
Abstract: VNDQ09
Text: 2N6661 N-Channel Enhancement-Mode MOS Transistor PRODUCT SUMMARY V BR DSS 'W (V) 90 4 TO-39 (TO-205AD) BOTTOM VIEW •d (A) 0.9 Performance Curves: VNDQ09 1 SOURCE 2 GATE 3 & CASE-DRAIN ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERSfTEST CONDITIONS
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2N6661
O-205AD)
VNDQ09
VNDQ09
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VQ1006
Abstract: No abstract text available
Text: VN0808L/LS, VQ1006P Vishay Siliconix N-Channel 80- and 90-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R ) D S S M ¡ n ( V ) Id (A) r D S (o n ) M a x ( ß ) V G S (th )(V ) 4 @ V Gs = 10 V 0.8 to 2 0.3 4 @ V G S = 10 V 0.8 to 2 0.33 4 @ V q s - 10 V
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VN0808L/LS,
VQ1006P
0808L
S-04279--
16-Jul-01
O-226AA)
VQ1006
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VNDQ09
Abstract: VQ1006 VQ1004
Text: JH SS& VQ1004 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY TOP VIEW PART NUMBER V BR DSS (V) VQ1004 60 VQ1006 90 T •d (A) PACKAGE 3.5 0.46 All 3.5 0.40 All Dual-ln-Une Package D1 [ 7 m] D4
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VQ1004
VQ1006
14-PIN
VQ1006
VNDQ06
VNDQ09
VNDQ09
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2N6661
Abstract: VN88AFD
Text: 2N6661/VN88AFD Vishay Siliconix N-Channel 80-V and 90-V D-S MOSFETS PRODUCT SUMMARY Part Number V (B R )D SS M i n 0 0 2N6661 90 4 @ V GS= 10 V 0.8 to 2 0.9 VN88AFD 80 4 @ VGs = 1 0 V 0.8 to 2.5 1.29 ro s ( o n ) Max (fì) V G S (th ) b (A) (V) FEATURES
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2N6661/VN88AFD
2N6661
VN88AFD
S-04279--
16-Jul-01
2N6661)
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VN88
Abstract: TO220SD TO-220SD VN88AD VN88A VN88AFD VN88AF
Text: SILICONIX INC «□r Siliconix JLM 1ÖE D • Ö254735 G014G70 T VN88 SERIES in c o rp o ra te d N-Channel Enhancement-Mode MOS Transistors " T 3 »1-07 PRODUCT SUMMARY PART V BR DSS rDS{ON) NUMBER (V) (n > TO-220/TO-220SD Id (A) PACKAGE VN88AD 80 4 1.49 TO-220
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E54735
Q014Q7Q
VN88AD
O-220
VN88AFD
O-220SD
VNDQ09
O-22O/TO-22OSD
VN88
TO220SD
TO-220SD
VN88A
VN88AF
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VN46AFD
Abstract: VNDQ1 vnd02 TD1001 VN46AF
Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)
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TN0201L,
TN0401L
VN0300L,
VN0300M
VQ1001J/P
VNDQ03
TD1001Y
TQ1001J
VN46AFD
VNDQ1
vnd02
TD1001
VN46AF
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Untitled
Abstract: No abstract text available
Text: Tem ic VN0808L/M, VQ1006P Siliconix N-Channel Enhancement-Mode MOS Transistors Product Summary P a rt Num ber V BR DSS M in (V) VN0808L 80 VN0808M VQ1006P 90 r DS(on) M ax (Q) I d (A) v GS(lji) (Y) 4 @ V GS = 10V 0.8 to 2 0.3 4 @ VGS = 10 V 0.8 to 2 0.33 4 @ VGS = 10 V
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VN0808L/M,
VQ1006P
VN0808L
VN0808M
P-37992--Rev.
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VQ1006
Abstract: VN0808L VN0808LS VQ1006P
Text: _ VN0808L/LS, VQ1006P Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V BR DSS Min (V) VN0808LS VQ1006P Id (A) i"DS(on) Max (Q) V GS(th) (V) 4 @ VGS = 10 V 0.8 to 2 0.3 4 @ VGS = 10 V
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VN0808L/LS,
VQ1006P
VN0808L
VN0808LS
VQ1006P
O-226AA)
S-58620â
-Jun-99
VQ1006
VN0808LS
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