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    V2012 Search Results

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    V2012 Price and Stock

    Eaton Bussmann MFBA2V2012-601-R

    FERRITE BEAD 600 OHM 0805 1LN
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    DigiKey MFBA2V2012-601-R Cut Tape 47,656 1
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    MFBA2V2012-601-R Digi-Reel 47,656 1
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    MFBA2V2012-601-R Reel 44,000 4,000
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    Master Electronics MFBA2V2012-601-R 32,000
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    Eaton Bussmann MFBA2V2012-301-R

    FERRITE BEAD 300 OHM 0805 1LN
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    DigiKey MFBA2V2012-301-R Digi-Reel 14,908 1
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    MFBA2V2012-301-R Cut Tape 14,908 1
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    MFBA2V2012-301-R Reel 12,000 4,000
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    Sager MFBA2V2012-301-R 4,000
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    Eaton Bussmann MFBW1V2012-600-R

    FERRITE BEAD 60 OHM 0805 1LN
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    DigiKey MFBW1V2012-600-R Cut Tape 9,972 1
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    MFBW1V2012-600-R Digi-Reel 9,972 1
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    MFBW1V2012-600-R Reel 4,000 4,000
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    Eaton Bussmann MFBA2V2012-151-R

    FERRITE BEAD 150 OHM 0805 1LN
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    DigiKey MFBA2V2012-151-R Digi-Reel 7,935 1
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    MFBA2V2012-151-R Cut Tape 7,935 1
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    MFBA2V2012-151-R Reel 4,000 4,000
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    Sager MFBA2V2012-151-R 4,000
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    Eaton Bussmann MFBM1V2012-221-R

    FERRITE BEAD 220 OHM 0805 1LN
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    DigiKey MFBM1V2012-221-R Digi-Reel 6,752 1
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    MFBM1V2012-221-R Reel 4,000 4,000
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    Master Electronics MFBM1V2012-221-R 36,000
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    Find more V2012 price and stock on Findchips.com

    V2012 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    V20120C-E3/4W Vishay General Semiconductor Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 10A TO220AB Original PDF
    V20120CHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120C-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120S-E3/4W Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB Original PDF
    V20120SG-E3/4W Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 120V 20A TO220AB Original PDF
    V20120SGHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120SG-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120SHM3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V20120S-M3/4W Vishay Semiconductor Diodes Division Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 20A 120V TO-220AB Original PDF
    V2012A140JB NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A140JL NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A140JT NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A180JB NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A180JL NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A180JT NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A260JB NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A260JL NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A260JT NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A330JB NEC EMI/EMC Components - Data Line Filters Original PDF
    V2012A330JL NEC EMI/EMC Components - Data Line Filters Original PDF

    V2012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC 2002/96/EC

    vf20120sg

    Abstract: J-STD-002B
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020C, O-263AB O-220AB, vf20120sg J-STD-002B

    J-STD-002

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB O-220AB, J-STD-002

    vf20120sg

    Abstract: J-STD-002
    Text: New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120SG, VF20120SG, VB20120SG VI20120SG ITO-220AB O-220AB V20120SG J-STD-020, O-263AB VF20120SG vf20120sg J-STD-002

    X485T

    Abstract: AMBA AXI4 verilog code axi wrapper
    Text: Xilinx Design Tools: Release Notes Guide Vivado Design Suite and ISE Design Suite UG631 v2012.2, v14.2 July 25, 2012 Notice of Disclaimer The information disclosed to you hereunder (the “Materials”) is provided solely for the selection and use of Xilinx products. To the maximum


    Original     		PDF UG631 v2012 X485T AMBA AXI4 verilog code axi wrapper

    Untitled

    Abstract: No abstract text available
    Text: V20120SG, VI20120SG www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V20120S, VI20120S www.vishay.com Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V20120C

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106

    J-STD-002

    Abstract: 1412D
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S ITO-220AB O-220AB V20120S J-STD-020, O-263AB 22-B106 J-STD-002 1412D

    V20120C

    Abstract: No abstract text available
    Text: New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VF20120C, VB20120C VI20120C O-220AB ITO-220AB J-STD-020C, O-263AB O-220AB, ITO-220AB V20120C

    v20120s

    Abstract: No abstract text available
    Text: V20120S, VF20120S & VI20120S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.491 V at IF = 5 A FEATURES ITO-220AB TO-220AB • Trench MOS Schottky Technology • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VF20120S VI20120S O-220AB ITO-220AB V20120S 2002/95/EC 2002/96/EC O-262AA v20120s

    V20120C

    Abstract: J-STD-002
    Text: New Product V20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses TO-220AB • High efficiency operation


    Original     		PDF V20120C O-220AB 22-B106 2002/95/EC 2002/96/EC O-220Alectual 18-Jul-08 V20120C J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120SG 22-B106

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120S, VF20120S, VB20120S VI20120S O-220AB ITO-220AB V20120S VF20120S J-STD-020, O-263AB

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120C, VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 2002/95/EC 2002/96/EC V20120C

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120SG, VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120SG, VI20120SG O-220AB O-262AA 22-B106 AEC-Q101 V20120SG 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120S, VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses


    Original     		PDF V20120S, VI20120S O-220AB O-262AA 22-B106 AEC-Q101 V20120S 2002/95/EC 2002/96/EC

    Untitled

    Abstract: No abstract text available
    Text: V20120C, VI20120C www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C, VI20120C O-220AB O-262AA 22-B106 AEC-Q101 V20120C 2002/95/EC. 2002/95/EC

    Untitled

    Abstract: No abstract text available
    Text: V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses


    Original     		PDF V20120C-E3, VF20120C-E3, VB20120C-E3, VI20120C-E3 O-220AB ITO-220AB J-STD-020, O-263AB V20120C VF20120C

    Untitled

    Abstract: No abstract text available
    Text: New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power


    Original     		PDF V20120C, VF20120C, VB20120C VI20120C O-220AB ITO-220AB V20120C VF20120C J-STD-020, O-263AB

    Untitled

    Abstract: No abstract text available
    Text: Chip Varistor V2012 / V3216 T O K Ifl w w w .pdf 11 /9 7 P ag e 1 o f 3 SMD Type Chip Varistor provides highly reliable surface mount application. Features □ High surge resistance: 100 to 270A. □ ZnO ceramic varistor. Applications □ ESD countermeasures, burst noise protection measures.


    OCR Scan     		PDF V2012 V3216 N2012 N3216 CA92121