Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UNDERSTANDING THERMAL BASICS FOR MICROWAVE POWER Search Results

    UNDERSTANDING THERMAL BASICS FOR MICROWAVE POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    UNDERSTANDING THERMAL BASICS FOR MICROWAVE POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
    Text: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band


    Original
    PDF FLL600IQ-3 60-Wpush-pull 117mA FUJITSU MICROWAVE TRANSISTOR understanding thermal basics for microwave power Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
    Text: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band


    Original
    PDF IMT-2000 FLL800IQ-2C Descriptio10 220mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 understanding thermal basics for microwave power

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
    Text: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band


    Original
    PDF IMT-2000 FLL600IQ-2C 151mA FUJITSU MICROWAVE TRANSISTOR 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B GAAS FET AMPLIFIER f 10Mhz to 2 GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
    Text: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band


    Original
    PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR class A push pull power amplifier 150w FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b push pull class AB RF linear S110 transistor

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
    Text: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and


    Original
    PDF IMT-2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B push pull class AB RF linear L band stub tuner matching

    Untitled

    Abstract: No abstract text available
    Text: Understanding Vector Network Analysis www.anritsu.com VNA Basics . 4 Network Analyzers . 6


    Original
    PDF MG3710A-E-L-1- 1410-00724A

    Fujitsu GaAs FET application note

    Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
    Text: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since


    Original
    PDF MTT-28, Fujitsu GaAs FET application note FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz

    FUJITSU MICROWAVE TRANSISTOR

    Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
    Text: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD


    Original
    PDF IMT2000 FLL1500IU-2C 440mA FUJITSU MICROWAVE TRANSISTOR Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500

    This article

    Abstract: vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet
    Text: Surfacing the facts of DMOS Power RF transistors from Published Data Sheets by S.K. Leong POLYFET RF DEVICES August 22, 1991 Power RF Mosfets have made considerable progress since the days of introduction some 15 years ago. Original manufacturers, Siliconix and Acrian have left


    Original
    PDF namely988. AR346. AN1107. This article vmil120ft acrian RF POWER TRANSISTOR VMIL20FT F2012 mosfet acrian RF MOSFET AR346 acrian RF MOSFET vmil40ft VMIL40FT n-channel enhancement mode vmos power fet

    vhf gmsk receiver

    Abstract: SWRA030 uhf modulator SSB ASK, PR ASK swra 2 way antenna splitter, circuit diagram qpsk discussion abstract on gas leakage detector Payne Engineering Company tdma noise reduce DPSK DSSS
    Text: Technical Brief SWRA030 Understanding and Enhancing Sensitivity in Receivers for Wireless Applications Edited by Matt Loy Wireless Communication Business Unit Abstract This technical brief provides an overview of communication receiver sensitivity. One of the most


    Original
    PDF SWRA030 vhf gmsk receiver SWRA030 uhf modulator SSB ASK, PR ASK swra 2 way antenna splitter, circuit diagram qpsk discussion abstract on gas leakage detector Payne Engineering Company tdma noise reduce DPSK DSSS

    SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS

    Abstract: huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104
    Text: JULY2010 ALSO PUBLISHED ONLINE: www.highfrequencyelectronics.com FEATURED PRODUCTS: MATERIALS,R&D SUPPORT, OSCILLATORS & SYNTHESIZERS INSIDE THIS ISSUE: Short-Range Transceiver Performance Circularly-Polarized Microwave Feed Fastest-Settling Type 2 PLL Design


    Original
    PDF JULY2010 SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER TRANS huawei microwave Antennas SC1887 thales smd 68 wispry "RF Connector" tyco instruction sheet 411 3255 HUAWEI Base Station SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR HFSO1000-12 scintera application note 104

    reverse phase control igbt dimmer schematic

    Abstract: SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor
    Text: AN1491 APPLICATION NOTE IGBT BASICS M. Aleo [email protected] 1. INTRODUCTION. IGBTs (Insulated Gate Bipolar Transistors) combine the simplicity of drive and the excellent fast switching capability of the MOSFET structure with the ability to handle high current values typical of a


    Original
    PDF AN1491 1980s, 130kHz. reverse phase control igbt dimmer schematic SCHEMATIC igbt dimmer SCHEMATIC IGNITION WITH IGBTS SCHEMATIC dimmer igbt induction lamp ballast reverse phase control igbt dimmer AN1491 Electric Welding Machine thyristor SCHEMATIC IGNITION iGBT Bipolar Static Induction Transistor

    Fujitsu GaAs FET application note

    Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
    Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was


    Original
    PDF fcs64 magS22 angS22 Fujitsu GaAs FET application note atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm

    pioneer pll

    Abstract: simple F.M. transmitter understanding thermal basics for microwave power CP-01052-1
    Text: DesignCon 2009 A New Jitter Classification Method Based on Statistical, Physical, and Spectroscopic Mechanisms Mike Li, Ph.D., Altera Corporation CP-01052-1.0 February 2009 Abstract This paper introduces a new jitter classification method based on jitter physical mechanisms


    Original
    PDF CP-01052-1 pioneer pll simple F.M. transmitter understanding thermal basics for microwave power

    MICROWAVE ASSOCIATES ISOLATOR

    Abstract: AS218 transistor
    Text: Semiconductor Discretes for RF-Microwave Applications Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high-performance analog and mixed-signal semiconductors enabling mobile connectivity. The company’s power amplifiers, front-end modules and


    Original
    PDF CAT501-09A MICROWAVE ASSOCIATES ISOLATOR AS218 transistor

    design of wireless data modem using fsk modulation

    Abstract: PSK modulation link budget calculation DPSK DSSS AN9624 AN9804 PHASE SHIFT KEYING PSK "FHSS" 9 Bands EQ AN9804.1
    Text: Tutorial on Basic Link Budget Analysis Application Note June 1998 AN9804.1 Authors: Jim Zyren and Al Petrick Abstract PRISM Overview Advances in the state-of-the-art have made wireless technology a more compelling solution for many consumer applications. This poses a problem to


    Original
    PDF AN9804 design of wireless data modem using fsk modulation PSK modulation link budget calculation DPSK DSSS AN9624 PHASE SHIFT KEYING PSK "FHSS" 9 Bands EQ AN9804.1

    design of wireless data modem using fsk modulation

    Abstract: link budget calculation 40-kbps mobile jammers for cdma RF 2.4Ghz band receiver bpsk modulation dsss FSK modulation design mobile jammer QPSK DSSS AN9624 AN9804
    Text: Tutorial on Basic Link Budget Analysis TM Application Note June 1998 AN9804.1 Authors: Jim Zyren and Al Petrick Abstract PRISM Overview Advances in the state-of-the-art have made wireless technology a more compelling solution for many consumer applications. This poses a


    Original
    PDF AN9804 IEEE802 design of wireless data modem using fsk modulation link budget calculation 40-kbps mobile jammers for cdma RF 2.4Ghz band receiver bpsk modulation dsss FSK modulation design mobile jammer QPSK DSSS AN9624

    design of wireless data modem using fsk modulation

    Abstract: 2N 9804 "FHSS" lambda LFS
    Text: Tutorial on Basic Link Budget Analysis Application Note June 1998 AN9804.1 Authors: Jim Zyren and Al Petrick Abstract PRISM Overview Advances in the state-of-the-art have made wireless technology a more compelling solution for many consumer applications. This poses a problem to


    Original
    PDF AN9804 -104dBm -93dBm design of wireless data modem using fsk modulation 2N 9804 "FHSS" lambda LFS

    design of wireless data modem using fsk modulation

    Abstract: 2N 9804 AN9804 link budget calculation Wireless USB Hub dsss FSK modulation design mobile jammers for cdma AN98041 PHASE SHIFT KEYING dPSK mobile jammer
    Text: Tutorial on Basic Link Budget Analysis TM Application Note June 1998 AN9804.1 Authors: Jim Zyren and Al Petrick Abstract PRISM Overview Advances in the state-of-the-art have made wireless technology a more compelling solution for many consumer applications. This poses a problem to


    Original
    PDF AN9804 IEEE802 design of wireless data modem using fsk modulation 2N 9804 link budget calculation Wireless USB Hub dsss FSK modulation design mobile jammers for cdma AN98041 PHASE SHIFT KEYING dPSK mobile jammer

    Diodes

    Abstract: RF Diode Design Guide
    Text: RF Diode Design Guide Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog and mixed signal semiconductors. Leveraging core technologies, Skyworks offers diverse standard and custom linear products supporting automotive, broadband, cellular infrastructure, energy management,


    Original
    PDF eng508 BRO389-11B Diodes RF Diode Design Guide

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


    Original
    PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    circuit diagram for split air conditioner

    Abstract: circuit diagram of split air conditioner schematic diagram for split air conditioner cross reference guide circuit diagram for split air conditioner control Split System Air Conditioner PN9000 RF Filters FM TRANSMITTER CIRCUIT DIAGRAM circuit diagram of general split air conditioner
    Text: Clock Conditioner Owner’s Manual 4Q 2006 Chapters: Introduction to Precision Clock Conditioners . 1 Phase Noise and Jitter .2 Phase-Locked Loop PLL Fundamentals . 3 Data Converter


    Original
    PDF

    SFP reference design kit

    Abstract: AN-1166 HDMP-1687 1000BASE-SX HFBR-5701L HFBR-5710L 696.1 LC-Connector diode 105y t 63 n 1200
    Text: Application Note For GigaBit Ethernet Physical Layer Solution Utilizing Small Form Factor Pluggable SFP Optical Transceivers and Quad-Channel SerDes Application Note 1243 Introduction Avago Technologies’ objective in creating this application note is to generate a ready-to-use physical


    Original
    PDF 5701L/5710L) HDMP-1687) HFBR-5710L 5988-3449EN SFP reference design kit AN-1166 HDMP-1687 1000BASE-SX HFBR-5701L HFBR-5710L 696.1 LC-Connector diode 105y t 63 n 1200

    wj mixer

    Abstract: No abstract text available
    Text: Mixers: Part 1 Characteristics and Performance Author: Bert C. Henderson The m ixer is a critical com p on en t in modem RF systems. Since it is usually the first or second device from the RF input, the performance of the mixer is crucial to the overall operation of the system. Such


    OCR Scan
    PDF