xxww
Abstract: Chip Inductor CS Coilcraft
Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 1008LS Series Chip Inductors Version 1008LS August, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"
|
Original
|
PDF
|
1008LS
xxww
Chip Inductor CS Coilcraft
|
47-2001
Abstract: ANG-S21 TGF4124-EPU
Text: 4124 TGF4124-EPU • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz
|
Original
|
PDF
|
TGF4124-EPU
TGF4124-EPU
47-2001
ANG-S21
|
RO4850
Abstract: 113 marking code transistor ROHM A004R MCH155 MGA-655T6 c1005* MCH155 MCR 052 PIN 100
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
|
Original
|
PDF
|
MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
MCR 052 PIN 100
|
Fujitsu GaAs FET application note
Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Text: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was
|
Original
|
PDF
|
fcs64
magS22
angS22
Fujitsu GaAs FET application note
atc100a
FLL810
Hp 2564
FLL810IQ-3C
IMT-2000
S03A2750N1
RFP 1026 resistor
fujitsu x band amplifiers
"15 GHz" power amplifier 41dBm
|
Untitled
Abstract: No abstract text available
Text: TGF4118 18 mm Discrete HFET August 5,2008 • • • • • ο4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm
|
Original
|
PDF
|
TGF4118
TGF4118
|
RO4850
Abstract: 113 marking code transistor ROHM C1005C0G1H4R7C c1005* MCH155 toko 4828 PHEMT marking code a 0322E GaAs 0.15 pHEMT A004R MCH155
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
|
Original
|
PDF
|
MGA-655T6
MGA-655T6
AV02-0322EN
RO4850
113 marking code transistor ROHM
C1005C0G1H4R7C
c1005* MCH155
toko 4828
PHEMT marking code a
0322E
GaAs 0.15 pHEMT
A004R
MCH155
|
Untitled
Abstract: No abstract text available
Text: Ceramic Packaged GaAs Power pHEMT AM030WX-BH-R March 2010 Rev 0 DC-10 GHz DESCRIPTION AMCOM’s AM030WX-BH-R is part of the BH series of GaAs pHEMTs. This part has a total gate width of 6mm. The AM030WX-BH-R is designed for high power microwave applications, operating up to 10 GHz. The
|
Original
|
PDF
|
AM030WX-BH-R
DC-10
AM030WX-BH-R
|
s parameters 4ghz
Abstract: GSH904-89 MAG-S22 s 0934
Text: GSH904-89 Discrete HFET Product Features ● 0. 1 to 4GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3.5 dB Noise Figure Product Description 4 The GSH904-89 is an unmatched General Purpose Medium Power Amplifier that covers the 100MHz to 4GHz frequency range with 22 dB
|
Original
|
PDF
|
GSH904-89
GSH904-89
100MHz
s parameters 4ghz
MAG-S22
s 0934
|
16166
Abstract: RLAS2026A Box393
Text: RLAS2026A 2000 ~ 2600 MHz Super Low Noise Amplifier1 RLAS2026A is an ultra low noise figure, wideband, and unconditionally stable SMT packaged amplifier with exceptionally low input and output VSWR. The amplifier offers typical 0.60 dB noise figure, 20 dB input and output return losses, 26.0 dB
|
Original
|
PDF
|
RLAS2026A
RLAS2026A
MIL-STD-202
MILSTD-883.
16166
Box393
|
113 marking code transistor ROHM
Abstract: A004R MCH155 MGA-655T6 c1005* MCH155 CW 7810 RO4850
Text: MGA-655T6 Low Noise Amplifier with Bypass Mode in Low Profile Package Data Sheet Description Features Avago Technologies’ MGA-655T6 is an economical, easy-to-use GaAs MMIC Low Noise Amplifier LNA with Bypass mode. The LNA has low noise and high linearity achieved through the use of Avago Technologies’
|
Original
|
PDF
|
MGA-655T6
MGA-655T6
MGA-655T6-BLKG
MGA-655T6-TR1G
MGA-655T6-TR2G
AV02-0322EN
113 marking code transistor ROHM
A004R
MCH155
c1005* MCH155
CW 7810
RO4850
|
GSH912-12
Abstract: GSH912 RG03 GSH912-00 angS12 0841 MAG-S11 unmatched bare amplifier 179-14 1200UM
Text: GSH912 1200um Discrete HFET Product Features ● 0. 1 to 12GHz Frequency Range ● +26 dBm P-1dB at 2GHz ● +42 dBm OIP3 at 2GHz ● 21 dB Gain at 2GHz ● 3 dB Noise Figure ● Bare Die -00 or 0805 DFN (-12) plastic package Product Description The GSH912 is an unmatched General Purpose Medium Power Amplifier
|
Original
|
PDF
|
GSH912
1200um
12GHz
GSH912
100MHz
GSH912-12
RG03
GSH912-00
angS12
0841
MAG-S11
unmatched bare amplifier
179-14
|
MMA445133-02
Abstract: No abstract text available
Text: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power
|
Original
|
PDF
|
MGA-445343-99
64QAM)
MGA-445343-99
2N2907
IRF242
MMA445133-02
|
Untitled
Abstract: No abstract text available
Text: 4124 TGF4124 • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124 RF Performance at F = 2.3 GHz
|
Original
|
PDF
|
TGF4124
TGF4124
|
ANG-S21
Abstract: TGF4124
Text: 4124 TGF4124 • • • • • 24 mm Discrete HFET 0.5 um gate finger length Nominal Pout of 12 Watts at 2.3 GHz Nominal PAE of 51.5% at 2.3 GHz Nominal Gain of 10.8 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124 RF Performance at F = 2.3 GHz
|
Original
|
PDF
|
TGF4124
TGF4124
ANG-S21
|
|
|
xxww
Abstract: Chip Inductor CS Coilcraft
Text: Coilcraft S-Parameter Data for RF Surface Mount Inductors 0402HL Series Chip Inductors Version 0402HL July, 2012 Coilcraft, Inc. 2012 Coilcraft two-port S-parameter data files are based on empirical measurements of Coilcraft RF Surface Mount Inductors. The data files are used as "black box"
|
Original
|
PDF
|
0402HL
xxww
Chip Inductor CS Coilcraft
|
Untitled
Abstract: No abstract text available
Text: MGA-24106 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-24106 is a low-noise amplifier LNA designed for GPS/ISM/WiMAX applications in the (0.9-3.5) GHz frequency range. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT
|
Original
|
PDF
|
MGA-24106
MGA-24106
AV02-2182EN
|
201100A
Abstract: dc to 3 ghz lna amplifier application circuits S1498 a 4514 v 112883 940462 260016 rf amplifier 10 ghz s1498 schematics power supply satellite receiver S1550
Text: APPLICATION NOTE SKY65047-360LF Matching Circuits for Various Frequency Bands Introduction S-Parameter and Noise Parameter Data Skyworks SKY65047-360LF is a high linearity Low Noise Amplifier LNA with an operational frequency of 0.4 to 3.0 GHz. The device is manufactured with an advanced SiGe process and
|
Original
|
PDF
|
SKY65047-360LF
SKY65047-360LF
01100A
201100A
dc to 3 ghz lna amplifier application circuits
S1498
a 4514 v
112883
940462
260016
rf amplifier 10 ghz s1498
schematics power supply satellite receiver
S1550
|
sd 4842
Abstract: MGA-24106 MAX 8997 MGA 24106 7158 7905 datasheet 9435 72 MAX 8774 datasheet mga 017 33262
Text: MGA-24106 High-Gain, Low Current Low Noise Amplifier with Variable Current and Shutdown Function Data Sheet Description Features Avago Technologies’ MGA-24106 is a low-noise amplifier LNA designed for GPS/ISM/WiMAX applications in the (0.9-3.5) GHz frequency range. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT
|
Original
|
PDF
|
MGA-24106
MGA-24106
AV02-2182EN
sd 4842
MAX 8997
MGA 24106
7158
7905 datasheet
9435 72
MAX 8774 datasheet
mga 017
33262
|
MGA-445343-99
Abstract: MMA445133-02 6 ghz amplifier 20w
Text: MGA-445343-99 4.4 – 5.3 GHz 20W High Efficiency Linear Power Amplifier Preliminary Data Sheet Oct 2010 Features: • • • • • • • • 13 dB Gain 43 dBm P-3dB 35 dBm Linear Pout @ 2.5% EVM 802.11 64QAM 20% Efficiency at 35 dBm Linear Output Power
|
Original
|
PDF
|
MGA-445343-99
64QAM)
MGA-445343-99
2N2907
IRF242
MMA445133-02
6 ghz amplifier 20w
|
ANG-S21
Abstract: TGF4112
Text: TGF4112 12 mm Discrete HFET ο4112 August 5, 2008 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 33.0 x 71.0 x 4.0 mils 0.8330 x 1.804 x 0.1016 mm
|
Original
|
PDF
|
TGF4112
TGF4112
ANG-S21
|
Untitled
Abstract: No abstract text available
Text: TGF4118-EPU 18 mm Discrete HFET 4118 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4118-EPU RF Performance at F = 2.3 GHz
|
OCR Scan
|
PDF
|
TGF4118-EPU
TGF4118-EPU
|
Untitled
Abstract: No abstract text available
Text: TGF4124-EPU 4124 24 mm Discrete HFET • 0.5 um gate finger length • Nominal Pout of 12 Watts at 2.3 GHz • Nominal PAE of 51.5% at 2.3 GHz • Nominal Gain of 10.8 dB at 2.3 GHz • Die size 36.0 x 81.0 x 4.0 mils 0.914 x 2.057 x 0.102 mm TGF4124-EPU RF Performance at F = 2.3 GHz
|
OCR Scan
|
PDF
|
TGF4124-EPU
TGF4124-EPU
|
RETU 3.02
Abstract: OT363 K2280
Text: S IE M E N S BGA425 S i - M M I C - A m p lif ie r in SIEGET 25-Technology Preliminary Data # Multifunctional Case. 50 Q Block LNA/MIX # Unconditionally stable # G a in [s ^ f^ S .S d B at 1.8 G H z (appl.1) G ain [Saif =22 d B at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z (VD=3V,lD=9.5mA)
|
OCR Scan
|
PDF
|
BGA425
25-Technology
Q62702-G0058
RETU 3.02
OT363
K2280
|
bms 97
Abstract: 37265
Text: S IE M E N S BGA427 Si-M M IC-Am plifier in SIEGET 25-Technology Preliminary Data # Cascadable 50 £2-Gain Block # # Unconditionally stable Gain |s21f =18.5 dB at 1.8 G H z appl.1 Gain |s21f =22 dB at 1.8 G H z (appl.2) IP3out = +7 dBm at 1.8 G H z # (V D=3V, lD=9.4m A)
|
OCR Scan
|
PDF
|
BGA427
25-Technology
Q62702-G0067
CP5056G5
bms 97
37265
|