1N5811
Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization
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CPD18
1N5807
1N5811
UES1301
UES1306
UES1401
UES1403
CUDD8-02
24-August
1N5811
CPD18
UES1306
UES1403
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1N5811
Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Text: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization
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CPD18
1N5807
1N5811
UES1301
UES1306
UES1401
UES1403
CUDD8-02
19-September
1N5811
CPD18
UES1306
UES1403
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MUR1560 equivalent
Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in
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MBRD835L
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
MUR1560 equivalent
1N4004 SMA
S1A SOD 88
S1A MARKING CODE SOD 88
1N5189
ss33 sma
Diode marking us1j
diode 6a10
6TQ035
usd745c equivalent
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1n5822 trr
Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRD1035CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
1n5822 trr
A14F diode
FR105 diode
MR850
diode A14A
BYV27 200 TAP
LT2A02
MBR3100 0630
1N4007 sod-123
SES50
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OZ 9983
Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —
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MBRB3030CTL
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
OZ 9983
mbr3045pt transistor
940 629 MOTOROLA 220
Motorola marking code K 652 TO-220
MUR3030
TRANSISTOR BC 456
Diode Marking 1N4007 Motorola
1N2069
A14F diode
BYV33-45
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Diode 1N4007 DO-7 Rectifier Diode
Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced
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MBRM120ET3
VHE205
VHE210
VHE215
VHE220
VHE2401
VHE2402
VHE2403
VHE2404
VHE605
Diode 1N4007 DO-7 Rectifier Diode
FE8D
marking BCV
BA157* diode
MUR160 SMa
diode rgp10g
MBRD360
cathode top 1n5619
1N2069
mur120 equivalent diode
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1N5807
Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization
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CPD18
1N5807
1N5811
UES1301
UES1306
UES1401
UES1403
CUDD8-02
22-March
1N5811
CPD18
UES1306
UES1403
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BYW29
Abstract: UES1402 UES1403 BYW29-100 BYW29-150 BYW29-50 UES1401
Text: RECTIFIERS BYW29-50 BYW29-100 BYW29-150 High Efficiency, 7 A and 8A UES1401 UES1402 UES1403 FEA TU R ES D ESCRIPTIO N • • • • • The B Y W 2 9 /U E S 1 4 0 0 Series, in a plastic package sim ilar to the T0 -22 0, is sp ecifically designed for operation in power switching
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BYW29-50
UES1401
BYW29-100
UES1402
BYW29-150
UES1403
BYW29/UES1400
O-220,
BYW29
UES1403
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BYW29
Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403
Text: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.
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BYW29-50
UES1401
BYW29-100
UES1402
BYW29-150
UES1403
BYW29/UES1400
O-220,
BYW29
UES1403
es1403
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UES1503
Abstract: UES2403 UES1401 UES1402 UES1403 UES1404 UES1501 UES1502 UES1504 UES2402
Text: je m it r o n ic r “ sem ic o n d u c to r s Semitronics Corp. RECTIFIERS High Efficiency, 8A t o - 22o a c ELECTRICAL SPECIFICATIONS Type UES1401 UES1402 UES1403 UES1404 ' Measured in circuit lF = 0.5A, lR = 1.OA, I REC = 0.25A Maximum Forward Voltage @
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to-22oac
UES1401
UES1402
UES1403
UES1404
ES2401
UES2402
UES2403
UES2404
UES1503
UES1501
UES1502
UES1504
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DYW29-150
Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404
Text: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150
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UES1401
BYW29-50
BYW80-50
UES1402
BYW29-100
BYW80-100
UES1403
BYW29-150
BYW80-150
BYW29-200
DYW29-150
es140
byw80
BYW29 diode rectifier
byw29100
UES1404
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UES1404
Abstract: UES1401 UES1402 UES1403
Text: UES1401 - UES1404 8 Amp Ultra Fast Rectifiers — C Dim. Inches Millimeter Minimum — B A B C D E F G H J K L M N P Base Cathode ? •it-M .3 9 0 .0 4 5 .180 .2 4 5 .5 5 0 .139 .100 -.5 0 0 .190 .014 .0 8 0 .0 2 8 .0 4 5 Maximum Minimum .415 .0 5 5
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UES1401
UES1404
O-220AC
UES1401
UES1402
UES1403
Fast80020
UES1404
UES1402
UES1403
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BYW29-150 diode
Abstract: BVW29-50 BYW29 BYW29-150 BYW29-200 BYW29-100 byw80 bvw29 BYW80-100 BYW80-150
Text: RECTIFIERS UES1401 UES1402 UES1403 UES1404 High Efficiency, 7 A and 8A FEATURES • Very Low Forward Vottage • Very Fast Recovery Times • Economical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150
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UES1401
BYW29-50
BYW80-50
UES1402
BYW29-100
BYW80-100
UES1403
BYW29-150
BYW80-150
UES1404
BYW29-150 diode
BVW29-50
BYW29
BYW29-200
byw80
bvw29
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TL 2272 R
Abstract: to220 5 lead plastic UFN610 m7 rectifier diode
Text: UNITRODE T2 CORP 9347963 U N I T R O O E CORP mT| 92D 0010720 10720 1 D - ?*?-< POWER MOSFET TRANSISTORS Hffilîi 200 Volt, 1.5 Ohm N-Channel UFN 612 UFN613 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN613
TL 2272 R
to220 5 lead plastic
UFN610
m7 rectifier diode
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UFN633
Abstract: UFN630 CIT-20
Text: U N ITR O PE T S CORP 9347963 D EE UN I T R O D E CORP |^ B 4 7 ^ b 3 T o iQ 7 3 ? T T 92D Q 10732 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FE A T U R E S • Com pact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN632
UFN633
UFN633
UFN630
CIT-20
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Untitled
Abstract: No abstract text available
Text: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low
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d773
Abstract: diode sy 710 sy 710 diode
Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN823
d773
diode sy 710
sy 710 diode
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1G747
Abstract: No abstract text available
Text: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown
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347ib3
UFN712
UFN713
1G747
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BYW80
Abstract: BYW80-150 BYW80-50 BYW80-100 UES1401 UES1402 UES1403 ES1401
Text: BYW80-50 BYW80-100 BYW80-150 RECTIFIERS High Efficiency, 7A and 8A U ES 1401 U ES 1402 UES1403 DESCRIPTION T h e B Y W 8 0 /U E S 1 4 0 0 Series, in a pla stic package s im ila r to th e TO-220, is s p e cific a lly desig n ed for operation in pow er sw itching
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BYW80-50
BYW80-100
BYW80-150
UES1403
BYW80/UES1400
O-220,
BYW80-100
BYW80-150
UES1401
UES1402
BYW80
UES1401
UES1402
UES1403
ES1401
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USD935-50
Abstract: No abstract text available
Text: UNITRODE CORP | 9347963 UN I TR OD E □□IGTflb b | 92D CORP 10986 RECTIFIERS D ^ES5501 SES5502 SES5503 SES5504 High Efficiency, 16A F EATU RES • Very Low Forward Voltage • Very Fast Recovery T im es • Econom ical, C onvenient T 0 -2 2 0 Package • Low T herm al Resistance
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ES5501
SES5502
SES5503
SES5504
USD935-50
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Untitled
Abstract: No abstract text available
Text: UNITRODE T5 CORP 9347963 U N IT R O D E DeT | ^347^^3 0011DL.7 4 | 92D CORP 11067 D r '^ulD620 POWER SCHOTTKY RECTIFIERS USD635 USD640 USD645 12A Pk, up to 45V DESC R IPT IO N The U S D 6 0 0 series of S chottky power rectifiers Is ideally suited for output
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0011DL
ulD620
USD635
USD640
USD645
SD635
SD620
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USD945
Abstract: TO-220 3 lead bend
Text: UNITRO DE CORP 9347963 ~ " ~ “iS • D E | ^3*47^3 0011D77 92D U N I T R O D E CORP POWER SCHOTTKY RECTIFIERS 32A Pk, up to 45V 11077 T - O S -t Ü 5 d 920 U SD935 U SD940 USD945 DESCRIPTION FEATURES • Very Low Forward Voltage 0.5V max @ 16A • Reverse Transient Capability
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0011D77
SD935
SD940
USD945
USD900
USD945
TO-220 3 lead bend
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UES1422
Abstract: UES1420 UES1421 UES1423
Text: 12 UNITRODE CORP 9347963 DE I ,ì347clb3 0D11031 UN I TRODE CORP 92D RECTIFIERS D U E S 1 4 2 0 -U E S 1 4 2 3 T -0 3 -/-7 High Efficiency, 8A FEATURES ° Low dynamic forward voltage • Very fast recovery times • Economical, convenient plastic package • Low thermal resistance
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0D11031
UES1420
O-220,
100kHz.
UES1422
UES1421
UES1423
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ufn730
Abstract: UFN731
Text: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN730
UFN731
UFN732
UFN733
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