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    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE BSE D btiSB^Sl QOlfl'in 4 BUV82 BUV83 r-23-13 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.


    OCR Scan     		PDF BUV82 BUV83 r-23-13 ttS3131

    IN4752a

    Abstract: 1N4742A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4761A
    Text: N AMER PHILIPS/DISCRETE SSE D • bfaSîiai 0017373 3 I |1N4728A to 1N4761A :8A t< T-ll-13 VOLTAGE REGULATOR DIODES The series consits of 34 types with nominal working voltages ranging from 3.3 to 75 V. MECHANICAL DATA Fig. 1 DO-41 SOD66 . Dimensions in mm


    OCR Scan     		PDF bbS3T31 111N4728A 1N4761A DO-41 7Z78729 1N4743A 1N4761A; 1N4728A 001737b IN4752a 1N4742A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4761A

    BUZ84

    Abstract: t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma
    Text: N AMER PH IL IPS/ DI SC RE TE ObE D P o w e rM O S tra n s is to r • ^53=131 QDlMblt 1 ■ B U Z 84 ^ - 5 ^ 1 3 July 1987 QUICK REFERENCE DATA PARAMETER SYMBOL Draln-source voltage VDS Drain current d.c. Id Total p*wer dissipation *tot Drain-source on-state resistance


    OCR Scan     		PDF BUZ84 ttS3131 T-39-13 Q0147QE t03 package transistor pin dimensions V103 TRANSISTOR V103 transistor t03 buz84 ma

    BUV83

    Abstract: BUV82
    Text: N AMER PHILIPS/DISCRETE SSE D • aoiöw m BUV82 BUV83 r - 3 3 -1 3 SILICON DIFFUSED POWER TRANSISTORS High voltage, high speed switching npn power transistor in plastic S O T 9 3 envelope, intended for use in converters, inverters, switching regulators, motor control systems and switching applications.


    OCR Scan     		PDF BUV82 BUV83 BUV83

    Untitled

    Abstract: No abstract text available
    Text: i i N ANER P H I L I P S / D I S C R E T E SSE D i {□ □53=131 DQ175DI3 7 I 2N5088 2N5089 T - ^ - 2 1 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N small-signal transistor in plastic TO-92 envelope intended for low-noise stages in audio equipment. Complementary types are 2N5086/2N5087.


    OCR Scan     		PDF DQ175DI3 2N5088 2N5089 2N5086/2N5087. T-29-21

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 QQ23ti2S 353 ■ APX BF994S N AP1ER PHILIPS/DISCRETE b7E D J V SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected and intended fo r V H F applications in television tuners.


    OCR Scan     		PDF bbS3T31 QQ23ti2S BF994S OT143

    Untitled

    Abstract: No abstract text available
    Text: • P hilips Sem iconductors Data sheet status Product specification date of issue October 1990 FEATURES • Short channel transistor with high ratio lYfSI/C15. • Low noise gain controlled amplifier to 1 GHz. DESCRIPTION Depletion type field-effect transistor


    OCR Scan     		PDF 0023k. BF998R lYfSI/C15. OT143R bbS3T31

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    1045F

    Abstract: IEC134 PBYR1035F PBYR1040F PBYR1045F
    Text: PBYR1035F PBYR1040F PBYR1045F ft N AUER P H I L I P S / D I S C R E T E 2SE D E3 ^ 5 3 ^ 3 1 0052^43 T Q T -O Z - ~7 SCHOTTKY-BARRIER RECTIFIER DIODES Low-leakage platinum -barrier rectifier diodes in SOT-186 full-pack) plastic envelopes, featuring low forward voltage drop, low capacitance, and absence o f stored charge. T heir electrical isolation makes


    OCR Scan     		PDF PBYR1035F PBYR1040F PBYR1045F OT-186 M2284 1045F IEC134 PBYR1045F

    J493

    Abstract: BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz
    Text: N AMER PHILIPS/DISCRETE 860 01684 DbE D • ^53=131 D O ^ S E D T ~ 3 3 ' Ì 1 . BLX13 Jl H.F./V.H.F. POW ER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and A B and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V, The transistor is resistance stabilized and tested


    OCR Scan     		PDF bS3T31 BLX13 70MHz J493 BLX13 philips 3h1 ic hf 3487 4312 020 36620 VHF IF 70MHz